Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000
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SC06951 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole ONSEMI The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...
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N Channel | 60V | 200mA | 5ohm | TO-92 | Through Hole | 10V | 2.1V | 400mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5819
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SC07409 |
Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV STMICROELECTRONICS The 1N5819 from STMicroelectronics is an axial leaded low drop power schottky rectifier in DO-41 package. These diodes are featured with very small conduction losses, negligible switching losses, extremely fast switching and low forward voltage drop. Typic...
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1+ €0.1547 (€0.19) 10+ €0.1428 (€0.18) 50+ €0.119 (€0.15) |
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS355AN
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SC06991 |
Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount ONSEMI The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...
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N Channel | 30V | 1.7A | 0.065ohm | - | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC461
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SC13213 |
Transistor, BC461, PNP, TO39 MULTICOMP PRO The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...
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- | - | - | - | TO-39 | Through Hole | - | - | 1W | 3Pins | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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P Channel | 100V | 23A | 0.117ohm | - | Through Hole | 10V | 4V | 140W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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1+ €1.7017 (€2.09) 10+ €1.5708 (€1.93) 100+ €1.428 (€1.76) 500+ €1.2733 (€1.57) |
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2803A
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SC08607 |
Darlington Array 8 NPN, 2803, DIP18 STMICROELECTRONICS The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...
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- | - | - | - | - | Through Hole | - | - | - | 18Pins | 85°C | Darlington Array | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT754A
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SC11306 |
Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C NXP The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...
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- | - | - | - | - | - | - | - | - | 3Pins | 125°C | BAT754 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC182L
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SC12579 |
Transistor, NPN, TO92 MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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5+ €0.1071 (€0.13) 25+ €0.0833 (€0.10) 100+ €0.0595 (€0.07) 1000+ €0.0476 (€0.06) |
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- | - | - | - | - | Through Hole | - | - | 350mW | 3Pins | 150°C | Multicomp Pro Bipolar Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP2110A
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SC06974 |
Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
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P Channel | 100V | 230mA | 8ohm | TO-226AA | Through Hole | 10V | 3.5V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX38C
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SC06835 |
Darlington Transistor, E-Line DIODES INC. The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range
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- | - | - | - | - | Through Hole | - | - | - | 3Pins | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS352AP
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SC11034 |
Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount ONSEMI The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...
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P Channel | 30V | 900mA | 0.25ohm | - | Surface Mount | 10V | 1.7V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT03C91-TR
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SC07151 |
Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole VISHAY • BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...
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- | - | - | - | - | - | - | - | 3.25W | 2Pins | 175°C | BZT03 Series | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5350BG
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SC07177 |
Zener Single Diode, 13 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C3V9.
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SC05693 |
Zener Single Diode, 3.9 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBPC3504
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SC07524 |
Bridge Rectifier, Single Phase, 400 V, 35 A, Module, 4 Pins, 1.1 V ONSEMI The GBPC3504 is a 35A single-phase glass passivated Bridge Rectifier with integrally moulded heatsink. The bridge rectifier feature solderable terminals as per MIL-STD-202, method 208 standard. This bridge rectifier is general usage and suitable for many d...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | GBPC3 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV85-C30
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SC07101 |
Zener Single Diode, 30 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C NXP The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...
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- | - | - | - | - | - | - | - | 1W | 2Pins | 200°C | BZV85 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C2V7.
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SC05689 |
Zener Single Diode, 2.7 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT46
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SC07326 |
Small Signal Schottky Diode, Single, 100 V, 150 mA, 450 mV, 750 mA, 125 °C STMICROELECTRONICS The BAT46 is a general purpose metal to silicon Small Signal Schottky Diode featuring high breakdown voltage, low forward voltage drop and low turn-on voltage. This diode is suited for protection and routing operations. • Very low conduction losses • Negli...
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- | - | - | - | - | - | - | - | - | 2Pins | 125°C | BAT46 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GBPC1202-E4/51
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SC07514 |
Bridge Rectifier, Single Phase, 200 V, 12 A, Module, 4 Pins, 1.1 V VISHAY The GBPC1202-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is general purpose use in AC/DC bridge full wave rectification for home appliances, office equipment and telecommunication application...
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN338P
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SC11041 |
Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount ONSEMI The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...
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P Channel | 20V | 1.6A | 0.13ohm | - | Surface Mount | 4.5V | 800mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW33
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SC10626 |
Transistor, NPN, SOT23 NXP The BCW33 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D3 Marking code
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- | - | - | - | SOT-23 | Surface Mount | - | - | 250mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540ZPBF
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SC11108 |
Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole INFINEON The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 100V | 36A | 0.0265ohm | - | Through Hole | 10V | 4V | 92W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2111LT1G
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SC10965 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm ONSEMI The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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- | - | - | - | SOT-23 | Surface Mount | - | - | 400mW | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5347BG
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SC07174 |
Zener Single Diode, 10 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole ONSEMI The 1N5347BG is a 2-pin 10V 5W Zener Voltage Regulator with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all co...
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- | - | - | - | - | - | - | - | 5W | 2Pins | 200°C | 1N53 Series | - |