Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel 60V 200mA 5ohm TO-92 Through Hole 10V 2.1V 400mW 3Pins 150°C - -
1N5819
1N5819 - Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

SC07409

Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

STMICROELECTRONICS

The 1N5819 from STMicroelectronics is an axial leaded low drop power schottky rectifier in DO-41 package. These diodes are featured with very small conduction losses, negligible switching losses, extremely fast switching and low forward voltage drop. Typic...

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- - - - - - - - - 2Pins 150°C - -
NDS355AN
NDS355AN - Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount

SC06991

Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount

ONSEMI

The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...

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N Channel 30V 1.7A 0.065ohm - Surface Mount 10V 1.6V 500mW 3Pins 150°C - -
BC461
BC461 - Transistor, BC461, PNP, TO39

SC13213

Transistor, BC461, PNP, TO39

MULTICOMP PRO

The BC461 is a -60V Silicon PNP Planar Epitaxial Medium Power Transistor ideal for low frequency devices typically with current ratings 2A. • High performance • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp Pro products ...

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- - - - TO-39 Through Hole - - 1W 3Pins 200°C - -
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel 100V 23A 0.117ohm - Through Hole 10V 4V 140W 3Pins 175°C - -
TIP141
TIP141 - Darlington Transistor, TO247

SC06870

Darlington Transistor, TO247

MULTICOMP PRO

The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...

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- - - - - Through Hole - - - 3Pins 150°C - -
ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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- - - - - Through Hole - - - 18Pins 85°C Darlington Array -
BAT754A
BAT754A - Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

SC11306

Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 260 mV, 600 mA, 125 °C

NXP

The BAT754 series planar Schottky Barrier Diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is used for ultra high-speed switching, voltage clamping, line te...

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- - - - - - - - - 3Pins 125°C BAT754 -
BC182L
BC182L - Transistor, NPN, TO92

SC12579

Transistor, NPN, TO92

MULTICOMP PRO

The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...

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- - - - - Through Hole - - 350mW 3Pins 150°C Multicomp Pro Bipolar Transistors -
ZVP2110A
ZVP2110A - Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

SC06974

Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.

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P Channel 100V 230mA 8ohm TO-226AA Through Hole 10V 3.5V 700mW 3Pins 150°C - -
BCX38C
BCX38C - Darlington Transistor, E-Line

SC06835

Darlington Transistor, E-Line

DIODES INC.

The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range

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- - - - - Through Hole - - - 3Pins 200°C - -
NDS352AP
NDS352AP - Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount

SC11034

Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...

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P Channel 30V 900mA 0.25ohm - Surface Mount 10V 1.7V 500mW 3Pins 150°C - -
BZT03C91-TR
BZT03C91-TR - Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07151

Zener Single Diode, 91 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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- - - - - - - - 3.25W 2Pins 175°C BZT03 Series AEC-Q101
1N5350BG
1N5350BG - Zener Single Diode, 13 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07177

Zener Single Diode, 13 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -
BZX79-C3V9.
BZX79-C3V9. - Zener Single Diode, 3.9 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05693

Zener Single Diode, 3.9 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
GBPC3504
GBPC3504 - Bridge Rectifier, Single Phase, 400 V, 35 A, Module, 4 Pins, 1.1 V

SC07524

Bridge Rectifier, Single Phase, 400 V, 35 A, Module, 4 Pins, 1.1 V

ONSEMI

The GBPC3504 is a 35A single-phase glass passivated Bridge Rectifier with integrally moulded heatsink. The bridge rectifier feature solderable terminals as per MIL-STD-202, method 208 standard. This bridge rectifier is general usage and suitable for many d...

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- - - - - - - - - 4Pins 150°C GBPC3 -
BZV85-C30
BZV85-C30 - Zener Single Diode, 30 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07101

Zener Single Diode, 30 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

The BZV85 series medium-power voltage regulator Zener Diode designed in a small hermetically sealed leaded SOD66 (DO-41) glass package. It is suitable for general regulation functions. • 1.3W Total power dissipation (maximum) • ±5% Tolerance series (approx...

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- - - - - - - - 1W 2Pins 200°C BZV85 -
BZX79-C2V7.
BZX79-C2V7. - Zener Single Diode, 2.7 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05689

Zener Single Diode, 2.7 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - - 500mW 2Pins 200°C BZX79 -
BAT46
BAT46 - Small Signal Schottky Diode, Single, 100 V, 150 mA, 450 mV, 750 mA, 125 °C

SC07326

Small Signal Schottky Diode, Single, 100 V, 150 mA, 450 mV, 750 mA, 125 °C

STMICROELECTRONICS

The BAT46 is a general purpose metal to silicon Small Signal Schottky Diode featuring high breakdown voltage, low forward voltage drop and low turn-on voltage. This diode is suited for protection and routing operations. • Very low conduction losses • Negli...

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- - - - - - - - - 2Pins 125°C BAT46 Series -
GBPC1202-E4/51
GBPC1202-E4/51 - Bridge Rectifier, Single Phase, 200 V, 12 A, Module, 4 Pins, 1.1 V

SC07514

Bridge Rectifier, Single Phase, 200 V, 12 A, Module, 4 Pins, 1.1 V

VISHAY

The GBPC1202-E4/51 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is general purpose use in AC/DC bridge full wave rectification for home appliances, office equipment and telecommunication application...

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- - - - - - - - - 4Pins 150°C - -
FDN338P
FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount

SC11041

Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount

ONSEMI

The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...

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P Channel 20V 1.6A 0.13ohm - Surface Mount 4.5V 800mV 500mW 3Pins 150°C - -
BCW33
BCW33 - Transistor, NPN, SOT23

SC10626

Transistor, NPN, SOT23

NXP

The BCW33 is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • PNP complements are BCW29 and BCW30 • D3 Marking code

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- - - - SOT-23 Surface Mount - - 250mW 3Pins 150°C - -
IRF540ZPBF
IRF540ZPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

SC11108

Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

INFINEON

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...

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N Channel 100V 36A 0.0265ohm - Through Hole 10V 4V 92W 3Pins 175°C - -
MMUN2111LT1G
MMUN2111LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

SC10965

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

ONSEMI

The MMUN2111LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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- - - - SOT-23 Surface Mount - - 400mW - 150°C - -
1N5347BG
1N5347BG - Zener Single Diode, 10 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07174

Zener Single Diode, 10 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5347BG is a 2-pin 10V 5W Zener Voltage Regulator with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. The Surmetic™ 40 Zener voltage regulator offers protection in all co...

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- - - - - - - - 5W 2Pins 200°C 1N53 Series -