Semiconductors - Discretes
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF520NPBF
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SC08214 |
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...
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N Channel | 100V | 9.7A | 0.2ohm | Through Hole | 10V | 4V | 47W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STD30NF06LT4
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SC16912 |
Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...
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N Channel | 60V | 35A | 0.022ohm | Surface Mount | 2.5V | 1.7V | 70W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4004-T
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SC17788 |
Standard Recovery Diode, 400 V, 1 A, Single, 1 V, 30 A DIODES INC. The 1N4004-T is a Rectifier Diode with moulded plastic case. The rectifier diode has high current capability and low forward voltage drop. • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Low Reverse Leakage Current
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- | - | - | - | - | - | - | - | 2Pins | 150°C | 1N4004 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4148WS-HE3-08
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SC17832 |
Small Signal Diode, Single, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA VISHAY • Small signal fast switching diode • AEC-Q101 qualified • Silicon epitaxial planar diode • Fast switching diodes
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- | - | - | - | - | - | - | - | 2Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4749A
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SC17950 |
Zener Single Diode, 24 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole ONSEMI The 1N4749A is a Zener Diode for general use and also suitable for many different applications. Color band denotes the cathode end polarity. • 10.5mA Test current • 5µA at 18.2V Maximum reverse leakage current
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- | - | - | - | - | - | - | 1W | 2Pins | 200°C | 1N47xxA | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4401
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SC15746 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92 MULTICOMP PRO The 2N4401 from Multicomp Pro is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications. • Collector emitter voltage (Vce) of 40V • Continuous collector...
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- | - | - | - | Through Hole | - | - | 625mW | 3Pins | 150°C | Multicomp Pro Low Power NPN Bipolar Transistor | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP4065S-7
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SC15956 |
Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD DIODES INC. DMP4065S-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...
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P Channel | 40V | 2.4A | 0.08ohm | Surface Mount | 10V | 3V | 720mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP80P06PHXKSA1
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SC15768 |
Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220 INFINEON The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...
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P Channel | 60V | 80A | 0.021ohm | Through Hole | 10V | 3V | 340W | 3Pins | 175°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC093N04LSGATMA1
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SC16751 |
Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount INFINEON The BSC093N04LS G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high sys...
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N Channel | 40V | 49A | 0.0078ohm | Surface Mount | 10V | 1.2V | 35W | 8Pins | 150°C | OptiMOS 3 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ATA
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SC15759 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A , 625mW, TO-92 ONSEMI The PN2222ATA is a NPN Transistor for general purpose power amplifier and switch. • 200°C/W Thermal Resistance, Junction-to-Ambient
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- | - | - | - | Through Hole | - | - | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2302CDS-T1-GE3
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SC16836 |
Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount VISHAY The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage
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N Channel | 20V | 2.9A | 0.045ohm | Surface Mount | 8V | 850mV | 710mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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B130-13-F
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SC17578 |
Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV DIODES INC. The B130-13-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and lead-free solderable matte tin-finish as per MIL-STD-202 terminals. It is suitable for use in low-voltage, high-frequency inverters, free-wheeling and polarity protec...
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- | - | - | - | - | - | - | - | 2Pins | 150°C | B130 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0040TRPBF
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SC16758 |
Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount INFINEON The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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N Channel | 40V | 3.6A | 0.044ohm | Surface Mount | 10V | 1.8V | 1.3W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1PS76SB40,115
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SC17489 |
RF Schottky Diode, Single, 120mA, 380mV, 5pF, SOD-323 NEXPERIA The 1PSxxSB4x series from NXP are surface mount general purpose schottky diodes. These diodes are configured in single, dual series, dual common cathode, dual common anode and quadruple common cathode/common cathode configuration. Applicable at ultra high ...
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- | - | - | - | - | - | - | - | - | 150°C | 1PS76SB | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3206PBF
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SC17003 |
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole INFINEON The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...
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N Channel | 60V | 210A | 0.003ohm | Through Hole | 10V | 4V | 300W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RB160MM-60TR
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SC17651 |
Schottky Rectifier, 60 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV ROHM • No. of Pins : 2Pins • Operating Temperature Max : 150°C
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- | - | - | - | - | - | - | - | 2Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP47P06
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SC16959 |
Power MOSFET, P Channel, 60 V, 47 A, 0.021 ohm, TO-220, Through Hole ONSEMI The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche ener...
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P Channel | 60V | 47A | 0.021ohm | Through Hole | 10V | 4V | 160W | 3Pins | 175°C | QFET | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SMB5929BT3G
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SC17940 |
Zener Single Diode, General Purpose, 15 V, 3 W, DO-214AA (SMB), 2 Pins, 150 °C, Surface Mount ONSEMI The 1SMB5929BT3G is a 2-pin 15V 3W Zener Diode Voltage Regulator designed for general purpose voltage regulation applications. It is made up of transfer-molded plastic void-free case and all external surfaces are corrosion-resistant with readily solderable...
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- | - | - | - | - | - | - | 3W | 2Pins | 150°C | 1SMB59xxBT3G | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS54
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SC15550 |
Schottky Rectifier, 40 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 550 mV MULTICOMP PRO SS54 is a Schottky rectifier diode designed for high-efficiency applications. It features a low forward voltage drop and fast switching capability, making it ideal for power management circuits. With a maximum current rating of 5A and a voltage rating of 4...
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- | - | - | - | - | - | - | - | 2Pins | 125°C | SS54 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LL4148+
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SC15557 |
Small Signal Diode, Single, 100 V, 150 mA, 2.5 V, 4 ns, 500 mA MULTICOMP PRO • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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- | - | - | - | - | - | - | - | 2Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP613PH6327XTSA1
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SC16854 |
Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount INFINEON The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...
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P Channel | 60V | 2.9A | 0.11ohm | Surface Mount | 10V | 3V | 1.8W | 4Pins | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2030TRPBF
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SC16739 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount INFINEON The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...
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N Channel | 30V | 2.7A | 0.08ohm | Surface Mount | 10V | 1.7V | 1.3W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306F
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SC16881 |
SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23 DIODES INC. The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.
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P Channel | 60V | 90mA | 14ohm | Surface Mount | 10V | 3.5V | 330mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV20ENR
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SC16980 |
SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB NEXPERIA The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...
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N Channel | 30V | 6A | 0.017ohm | Surface Mount | 10V | 1.5V | 510mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX79-C27.
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SC05711 |
Zener Single Diode, 27 V, 500 mW, DO-35, 2 Pins, 200 °C NXP • Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79
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- | - | - | - | - | - | - | 500mW | 2Pins | 200°C | BZX79 | - |