Semiconductors - Discretes

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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N Channel 100V 9.7A 0.2ohm Through Hole 10V 4V 47W 3Pins 175°C - -
STD30NF06LT4
STD30NF06LT4 - Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

SC16912

Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...

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N Channel 60V 35A 0.022ohm Surface Mount 2.5V 1.7V 70W 3Pins 175°C - -
1N4004-T
1N4004-T - Standard Recovery Diode, 400 V, 1 A, Single, 1 V, 30 A

SC17788

Standard Recovery Diode, 400 V, 1 A, Single, 1 V, 30 A

DIODES INC.

The 1N4004-T is a Rectifier Diode with moulded plastic case. The rectifier diode has high current capability and low forward voltage drop. • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Low Reverse Leakage Current

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- - - - - - - - 2Pins 150°C 1N4004 -
1N4148WS-HE3-08
1N4148WS-HE3-08 - Small Signal Diode, Single, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA

SC17832

Small Signal Diode, Single, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA

VISHAY

• Small signal fast switching diode • AEC-Q101 qualified • Silicon epitaxial planar diode • Fast switching diodes

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- - - - - - - - 2Pins 150°C - AEC-Q101
1N4749A
1N4749A - Zener Single Diode, 24 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

SC17950

Zener Single Diode, 24 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N4749A is a Zener Diode for general use and also suitable for many different applications. Color band denotes the cathode end polarity. • 10.5mA Test current • 5µA at 18.2V Maximum reverse leakage current

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- - - - - - - 1W 2Pins 200°C 1N47xxA -
2N4401
2N4401 - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92

SC15746

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92

MULTICOMP PRO

The 2N4401 from Multicomp Pro is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications. • Collector emitter voltage (Vce) of 40V • Continuous collector...

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- - - - Through Hole - - 625mW 3Pins 150°C Multicomp Pro Low Power NPN Bipolar Transistor -
DMP4065S-7
DMP4065S-7 - Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

SC15956

Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

DIODES INC.

DMP4065S-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...

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P Channel 40V 2.4A 0.08ohm Surface Mount 10V 3V 720mW 3Pins 150°C - -
SPP80P06PHXKSA1
SPP80P06PHXKSA1 - Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

SC15768

Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

INFINEON

The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...

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P Channel 60V 80A 0.021ohm Through Hole 10V 3V 340W 3Pins 175°C - AEC-Q101
BSC093N04LSGATMA1
BSC093N04LSGATMA1 - Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount

SC16751

Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount

INFINEON

The BSC093N04LS G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high sys...

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N Channel 40V 49A 0.0078ohm Surface Mount 10V 1.2V 35W 8Pins 150°C OptiMOS 3 Series -
PN2222ATA
PN2222ATA - Bipolar (BJT) Single Transistor, NPN, 40V, 1A , 625mW, TO-92

SC15759

Bipolar (BJT) Single Transistor, NPN, 40V, 1A , 625mW, TO-92

ONSEMI

The PN2222ATA is a NPN Transistor for general purpose power amplifier and switch. • 200°C/W Thermal Resistance, Junction-to-Ambient

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- - - - Through Hole - - 625mW 3Pins 150°C - -
SI2302CDS-T1-GE3
SI2302CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount

SC16836

Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount

VISHAY

The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage

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N Channel 20V 2.9A 0.045ohm Surface Mount 8V 850mV 710mW 3Pins 150°C - -
B130-13-F
B130-13-F - Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV

SC17578

Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV

DIODES INC.

The B130-13-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and lead-free solderable matte tin-finish as per MIL-STD-202 terminals. It is suitable for use in low-voltage, high-frequency inverters, free-wheeling and polarity protec...

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- - - - - - - - 2Pins 150°C B130 -
IRLML0040TRPBF
IRLML0040TRPBF - Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

SC16758

Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel 40V 3.6A 0.044ohm Surface Mount 10V 1.8V 1.3W 3Pins 150°C - -
1PS76SB40,115
1PS76SB40,115 - RF Schottky Diode, Single, 120mA, 380mV, 5pF, SOD-323

SC17489

RF Schottky Diode, Single, 120mA, 380mV, 5pF, SOD-323

NEXPERIA

The 1PSxxSB4x series from NXP are surface mount general purpose schottky diodes. These diodes are configured in single, dual series, dual common cathode, dual common anode and quadruple common cathode/common cathode configuration. Applicable at ultra high ...

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- - - - - - - - - 150°C 1PS76SB -
IRFB3206PBF
IRFB3206PBF - Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

SC17003

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...

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N Channel 60V 210A 0.003ohm Through Hole 10V 4V 300W 3Pins 175°C - -
RB160MM-60TR
RB160MM-60TR - Schottky Rectifier, 60 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV

SC17651

Schottky Rectifier, 60 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV

ROHM

• No. of Pins : 2Pins • Operating Temperature Max : 150°C

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- - - - - - - - 2Pins 150°C - -
FQP47P06
FQP47P06 - Power MOSFET, P Channel, 60 V, 47 A, 0.021 ohm, TO-220, Through Hole

SC16959

Power MOSFET, P Channel, 60 V, 47 A, 0.021 ohm, TO-220, Through Hole

ONSEMI

The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche ener...

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P Channel 60V 47A 0.021ohm Through Hole 10V 4V 160W 3Pins 175°C QFET -
1SMB5929BT3G
1SMB5929BT3G - Zener Single Diode, General Purpose, 15 V, 3 W, DO-214AA (SMB), 2 Pins, 150 °C, Surface Mount

SC17940

Zener Single Diode, General Purpose, 15 V, 3 W, DO-214AA (SMB), 2 Pins, 150 °C, Surface Mount

ONSEMI

The 1SMB5929BT3G is a 2-pin 15V 3W Zener Diode Voltage Regulator designed for general purpose voltage regulation applications. It is made up of transfer-molded plastic void-free case and all external surfaces are corrosion-resistant with readily solderable...

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- - - - - - - 3W 2Pins 150°C 1SMB59xxBT3G -
SS54
SS54 - Schottky Rectifier, 40 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 550 mV

SC15550

Schottky Rectifier, 40 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 550 mV

MULTICOMP PRO

SS54 is a Schottky rectifier diode designed for high-efficiency applications. It features a low forward voltage drop and fast switching capability, making it ideal for power management circuits. With a maximum current rating of 5A and a voltage rating of 4...

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- - - - - - - - 2Pins 125°C SS54 -
LL4148+
LL4148+ - Small Signal Diode, Single, 100 V, 150 mA, 2.5 V, 4 ns, 500 mA

SC15557

Small Signal Diode, Single, 100 V, 150 mA, 2.5 V, 4 ns, 500 mA

MULTICOMP PRO

• Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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- - - - - - - - 2Pins 175°C - -
BSP613PH6327XTSA1
BSP613PH6327XTSA1 - Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

SC16854

Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

INFINEON

The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...

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P Channel 60V 2.9A 0.11ohm Surface Mount 10V 3V 1.8W 4Pins 150°C - AEC-Q101
IRLML2030TRPBF
IRLML2030TRPBF - Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

SC16739

Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...

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N Channel 30V 2.7A 0.08ohm Surface Mount 10V 1.7V 1.3W 3Pins 150°C - -
ZVP3306F
ZVP3306F - SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

SC16881

SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

DIODES INC.

The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.

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P Channel 60V 90mA 14ohm Surface Mount 10V 3.5V 330mW 3Pins 150°C - -
PMV20ENR
PMV20ENR - SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

SC16980

SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

NEXPERIA

The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...

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N Channel 30V 6A 0.017ohm Surface Mount 10V 1.5V 510mW 3Pins 150°C - -
BZX79-C27.
BZX79-C27. - Zener Single Diode, 27 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05711

Zener Single Diode, 27 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - - - - - 500mW 2Pins 200°C BZX79 -