Semiconductors - Discretes

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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current DC Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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MMBT2222ALT1G
MMBT2222ALT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

SC16021

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications. • Halogen-free/BFR-free • AEC-Q101 Qualified and PPAP Capable

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NPN 40V 600mA 600mA 225mW SOT-23 Surface Mount 3Pins 300MHz 300hFE 35hFE 150°C MMBTxxxx AEC-Q101
PDZ12B,115
PDZ12B,115 - Zener Single Diode, 12 V, 400 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

SC17970

Zener Single Diode, 12 V, 400 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

NEXPERIA

The PDZ-B series low-power general-purpose Zener Diode designed in a SOD323 (SC-76) small plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±2% Tolerance series (approximately) • 2.4 to 36V (E24 range) Nominal...

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- - - - 400mW - - 2Pins - - - 150°C PDZ-B -
CSD19537Q3T
CSD19537Q3T - SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

SC16995

SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

TEXAS INSTRUMENTS

• Power Dissipation : 83W • Transistor Case Style : VSON • Transistor Mounting : Surface Mount • No. of Pins : 8Pins • Operating Temperature Max : 150°C

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- - - - 83W VSON Surface Mount 8Pins - - - 150°C - -
2N3773G
2N3773G - Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA

SC15818

Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA

ONSEMI

The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters o...

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NPN 140V 16A - 150W TO-204AA Through Hole 2Pins - - 4hFE 200°C 2NXXXX -
BAW56
BAW56 - Small Signal Diode, Dual Common Anode, 75 V, 300 mA, 1.25 V, 4 ns, 2 A

SC17797

Small Signal Diode, Dual Common Anode, 75 V, 300 mA, 1.25 V, 4 ns, 2 A

DIODES INC.

The BAW56 is a surface mount dual Small Signal Switching Diode encapsulated in a moulded plastic case. It has two diode elements connected in common anode configuration and matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is id...

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- - - - - - - 3Pins - - - 150°C BAW56 -
2N1711
2N1711 - Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

SC15750

Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

MULTICOMP PRO

Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...

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NPN 50V 500mA - 3W TO-39 Through Hole 3Pins 70MHz - 100hFE 200°C - -
RF071M2STR
RF071M2STR - Fast / Ultrafast Diode, 200 V, 700 mA, Single, 850 mV, 25 ns, 15 A

SC17777

Fast / Ultrafast Diode, 200 V, 700 mA, Single, 850 mV, 25 ns, 15 A

ROHM

The RF071M2STR is a silicon epitaxial standard Super-fast Recovery Diode for general rectification application. • Ultra low forward voltage • Low switching loss

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- - - - - - - - - - - 150°C RF071 -
MMSZ3V3T1G
MMSZ3V3T1G - Zener Single Diode, 3.3 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

SC17930

Zener Single Diode, 3.3 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

ONSEMI

The MMSZ2V4T1 series surface mount Voltage Regulator Zener Diode designed for optimal automated board assembly. This device provides a convenient alternative to the leadless 34-package style. It comes with void free transfer-moulded thermosetting plastic c...

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- - - - 500mW - - 2Pins - - - 150°C MMSZ2V4T1 AEC-Q101
BC846BDW1T1G
BC846BDW1T1G - Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

SC16123

Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

ONSEMI

The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free

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Dual NPN - - 100mA - SOT-363 Surface Mount 6Pins - 200hFE - 150°C BCxxx Series -
BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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- - - - 500mW SOT-23 Surface Mount 3Pins - - - 150°C - AEC-Q101
S2MA
S2MA - Standard Recovery Diode, 1 kV, 2 A, Single, 1.1 V, 60 A

SC15545

Standard Recovery Diode, 1 kV, 2 A, Single, 1.1 V, 60 A

MULTICOMP PRO

• Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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- - - - - - - 2Pins - - - 150°C - -
BT152-600R,127
BT152-600R,127 - Glass Passivated Thyristor, 800V, 32mA, 13A, 20A, TO-220AB, 3 Pins

SC17045

Glass Passivated Thyristor, 800V, 32mA, 13A, 20A, TO-220AB, 3 Pins

WEEN SEMICONDUCTORS

Glass passivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications • Typical applications include motor control, industrial ...

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- - - - - - - 3Pins - - - 125°C BT152 -
BSS84DW-7-F
BSS84DW-7-F - Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

SC16803

Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

DIODES INC.

The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...

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- - - - - SOT-363 - 6Pins - - - 150°C - -
ZXM61N02F
ZXM61N02F - Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

SC16913

Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...

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- - - - 625mW SOT-23 Surface Mount 3Pins - - - 150°C - -
BAW56LT1G
BAW56LT1G - Small Signal Diode, Switching, Dual Common Anode, 70V, 150mA, 1.25V, 6ns, 500mA

SC17819

Small Signal Diode, Switching, Dual Common Anode, 70V, 150mA, 1.25V, 6ns, 500mA

ONSEMI

• Halogen-free

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- - - - - - - 3Pins - - - 150°C BAW56 AEC-Q101
S2M
S2M - Standard Recovery Diode, 1 kV, 2 A, Single, 1.15 V, 2 µs, 50 A

SC17877

Standard Recovery Diode, 1 kV, 2 A, Single, 1.15 V, 2 µs, 50 A

ONSEMI

The S2M is a General Purpose Rectifier with glass passivated junction. High current capability. • 2.35W Maximum power dissipation • 53°C/W Junction-to-ambient thermal resistance • 30pF Typical total capacitance • 2μs Fast response

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- - - - - - - 2Pins - - - 150°C S2x Series -
BT145-800R,127
BT145-800R,127 - Thyristor, 800V, 35mA, 16A, 25A, TO-220AB, 3 Pins

SC17050

Thyristor, 800V, 35mA, 16A, 25A, TO-220AB, 3 Pins

WEEN SEMICONDUCTORS

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance. • Sui...

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- - - - - - - 3Pins - - - 125°C BT145 -
1N4005-E3/54
1N4005-E3/54 - Standard Recovery Diode, 600 V, 1 A, Single, 1.1 V, 30 A

SC17839

Standard Recovery Diode, 600 V, 1 A, Single, 1.1 V, 30 A

VISHAY

The 1N4005-E3/54 is a 2-pin 600V General Purpose Plastic Rectifier with end molded epoxy case and matte tin plated terminals. It is suitable for use in rectification of power supplies, inverters, converters and freewheeling diodes application. • Color band...

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- - - - - - - 2Pins - - - 150°C - -
MB6S
MB6S - Bridge Rectifier Diode, Single Phase, 600V, 500mA, SOIC, 1V, 4 Pins

SC17431

Bridge Rectifier Diode, Single Phase, 600V, 500mA, SOIC, 1V, 4 Pins

ONSEMI

The MB6S is a 4-pin 0.5A Bridge Rectifier achieves high surge current absorption within a very small foot print. In order to absorb high surge currents, the design supports IFSM rating and a 5A 2 seconds I2T rating. Its features make the MB family ideal fo...

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- - - - - - - 4Pins - - - 150°C MB6S -
B0540W-7-F
B0540W-7-F - Schottky Rectifier, 40 V, 500 mA, Single, SOD-123, 2 Pins, 620 mV

SC17553

Schottky Rectifier, 40 V, 500 mA, Single, SOD-123, 2 Pins, 620 mV

DIODES INC.

The B0540W-7-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solderable matte tin-finish annealed over alloy 42 lead frame terminals as per MIL-STD-202 standard. • Polarity is indicated by cathode band • Low forward voltage dr...

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- - - - - - - 2Pins - - - 150°C B0540 -
BZV55-C9V1,115
BZV55-C9V1,115 - Zener Single Diode, 9.1 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC17907

Zener Single Diode, 9.1 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NEXPERIA

The BZV55 series low-power voltage regulator Zener Diode designed in a small hermetically sealed glass SOD80C surface-mounted device (SMD) package. It is suitable for general regulation functions. • ≤40W Non-repetitive peak reverse power dissipation • 2.4 ...

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- - - - 500mW - - 2Pins - - - 200°C BZV55 -
ZXMP6A17E6TA
ZXMP6A17E6TA - Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

SC16832

Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...

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- - - - 1.1W SOT-23 Surface Mount 6Pins - - - 150°C - -
PMEG4030ER,115
PMEG4030ER,115 - Schottky Rectifier, 40 V, 3 A, Single, SOD-123W, 2 Pins, 540 mV

SC17559

Schottky Rectifier, 40 V, 3 A, Single, SOD-123W, 2 Pins, 540 mV

NEXPERIA

The PMEG4030ER is a planar maximum efficiency general application (MEGA) Schottky barrier Rectifier Diode with an integrated guard ring for stress protection. The Low VF Schottky rectifier offers extremely low forward voltage drop during operation, resulti...

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- - - - - - - 2Pins - - - 150°C PMEG4 -
ES1JL R3G
ES1JL R3G - Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.7 V, 35 ns, 30 A

SC17764

Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.7 V, 35 ns, 30 A

TAIWAN SEMICONDUCTOR

The ES1JL from Taiwan Semiconductor are surface mount super fast rectifier in Sub SMA package. This device features glass passivated junction, low profile package, low power loss and high efficiency. • Automotive grade AEC-Q101 qualified • Ideal for automa...

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- - - - - - - - - - - 150°C ES1J -
MMSZ4678T1G
MMSZ4678T1G - Zener Single Diode, 1.8 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

SC17944

Zener Single Diode, 1.8 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

ONSEMI

The MMSZ4678T1G is a surface mount Zener Diode with a void-free transfer-molded thermosetting plastic case and easily solderable corrosion-resistant finish. This diode is designed for voltage regulation applications. • Cathode indicated by polarity band • ...

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- - - - 500mW - - 2Pins - - - 150°C MMSZxxxT1G AEC-Q101