MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20-7
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SC15958 |
Power MOSFET, N Channel, 50V, 500mA, 1.3 Ohm, SOT-23, SMD DIODES INC. BSN20-7 is a N-channel enhancement mode field MOSFET. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applicatio...
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N Channel | 50V | 500mA | 1.8ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3154NT1G
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SC16697 |
SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA ONSEMI The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications. • Low RDS (ON) improving s...
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N Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS806NEH6327XTSA1
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SC16876 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 2.3A | 0.041ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB4227PBF
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SC17001 |
Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole INFINEON The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...
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N Channel | 200V | 65A | 0.0197ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4925DDY-T1-GE3
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SC16688 |
SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A VISHAY The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages whic...
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P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD25P03LT4G
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SC16886 |
Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...
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P Channel | 30V | 25A | 0.056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19534Q5AT
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SC16686 |
SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A TEXAS INSTRUMENTS The CSD19534Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications. • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Halogen-free...
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N Channel | 100V | 50A | 0.0126ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL014NTRPBF
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SC16905 |
Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount INFINEON The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 2A | 0.14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6344TRPBF
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SC16730 |
Power MOSFET, N Channel, 30 V, 5 A, 0.022 ohm, SOT-23, Surface Mount INFINEON The IRLML6344TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 30V | 5A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4401DDY-T1-GE3
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SC16821 |
Power MOSFET, P Channel, 40 V, 16.1 A, 0.018 ohm, SOIC, Surface Mount VISHAY The SI4401DDY-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and POL applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 40V | 16.1A | 0.018ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4020PBF
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SC16951 |
Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole INFINEON The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve ...
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N Channel | 200V | 18A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2301L-7
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SC15969 |
Power MOSFET, P Channel, 20V, 3A, 0.12 Ohm, SOT-23, SMD DIODES INC. DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...
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P Channel | 20V | 3A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1013T-7
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SC16829 |
SMD P Channel Power MOSFET, 20V, 460mA, 0.5 Ohm, SOT-523 DIODES INC. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC/DC converters, load switch and power ...
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P Channel | 20V | 460mA | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84AKW,115
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SC16842 |
Power MOSFET, P Channel, 50 V, 150 mA, 4.5 ohm, SOT-323, Surface Mount NEXPERIA The BSS84AKW is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The P-channel MOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications. ...
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P Channel | 50V | 150mA | 4.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB8314PBF
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SC16927 |
Power MOSFET, N Channel, 30 V, 171 A, 0.0024 ohm, TO-220AB, Through Hole INFINEON IRLB8314PBF is a HEXFET® power MOSFET. Application includes optimized for UPS/inverter applications, low voltage power tools. • Best in Class performance for UPS/Inverter applications • Ultra-low gate impedance, fully characterized avalanche voltage and cu...
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N Channel | 30V | 171A | 0.0024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV301N
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SC16698 |
SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA ONSEMI The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...
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N Channel | 25V | 220mA | 4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4127PBF
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SC16988 |
Power MOSFET, N Channel, 200 V, 76 A, 0.017 ohm, TO-220AB, Through Hole INFINEON Single N-channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications. • Improved gate, avalanche and dynami...
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N Channel | 200V | 76A | 0.017ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1012UW-7
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SC15960 |
Power MOSFET, N Channel, 20V, 1A, 0.3 Ohm, SOT-323, SMD DIODES INC. DMG1012UW-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source ...
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N Channel | 20V | 1A | 0.45ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61P03F
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SC16786 |
Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61P03F is a P-channel enhancement mode MOSFET from Zetex utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications....
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P Channel | 30V | 1.1A | 0.35ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5505TRPBF
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SC16813 |
Power MOSFET, P Channel, 55 V, 18 A, 0.11 ohm, TO-252AA, Surface Mount INFINEON The IRFR5505TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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P Channel | 55V | 18A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS6679AZ
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SC16900 |
Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount ONSEMI The FDS6679AZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs. • High perfo...
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P Channel | 30V | 13A | 0.0077ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5210STRLPBF
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SC16815 |
Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient ...
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P Channel | 100V | 38A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP2532
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SC16972 |
N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB ONSEMI • Low miller charge • Low Qrr body diode • UIS Capability (single pulse and repetitive pulse)
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N Channel | 150V | 79A | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF730PBF
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SC16902 |
N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB VISHAY • Dynamic dV/dt rating • Repetitive avalanche rated • 150°C Operating temperature • Easy to parallel • Simple drive requirement
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N Channel | 400V | 5.5A | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9510PBF
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SC16944 |
Power MOSFET, P Channel, 100 V, 3 A, 1.2 ohm, TO-220AB, Through Hole VISHAY The IRF9510PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximate...
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P Channel | 100V | 3A | 1.2ohm |