MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDMQ8205A
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SC16810 |
Dual MOSFET, Complementary N and P Channel, MLP, SMD ONSEMI • Channel Type : Complementary N and P Channel
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Complementary N and P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMF170XP,115
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SC16740 |
Power MOSFET, P Channel, 20 V, 1 A, 0.175 ohm, SOT-323, Surface Mount NEXPERIA The PMF170XP is a P-channel enhancement mode Field-Effect Transistor with low drain-source on-state resistance and fast switching. • Trench MOSFET technology • Very fast switching
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P Channel | 20V | 1A | 0.175ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDC5614P
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SC16723 |
Power MOSFET, P Channel, 60 V, 3 A, 0.105 ohm, SuperSOT, Surface Mount ONSEMI The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...
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P Channel | 60V | 3A | 0.105ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84-7-F
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SC16752 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The BSS84-7-F is a P-channel enhancement-mode MOSFET with solderable matte tin plated terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for hi...
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P Channel | 50V | 130mA | 10ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDC604P
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SC16981 |
Power MOSFET, P Channel, 20 V, 5.5 A, 0.033 ohm, SuperSOT, Surface Mount ONSEMI The FDC604P is a 1.8V specified P-channel MOSFET uses low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications. • Fast switching speed • High performance Trench technology for ext...
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P Channel | 20V | 5.5A | 0.033ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC093N15NS5ATMA1
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SC15975 |
Power MOSFET, N Channel, 150V, 87A, 0.0079 Ohm, TDSON, SMD INFINEON • 150V Optima's ™ 5 power transistor • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge(Qtr.) • Qualified according to JEDEC for target applications • Ideal for hig...
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N Channel | 150V | 87A | 0.0079ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DN2540N5-G
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SC16996 |
Power MOSFET, N Channel, 400 V, 500 mA, 17 ohm, TO-220AB, Through Hole MICROCHIP The DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar ...
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N Channel | 400V | 500mA | 17ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN2004K-7
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SC16984 |
Power MOSFET, N Channel, 20 V, 630 mA, 0.55 ohm, SOT-23, Surface Mount DIODES INC. The DMN2004K-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS (ON) and yet main...
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N Channel | 20V | 630mA | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4946BEY-T1-E3
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SC16800 |
Dual MOSFET, N Channel, 60V, 6.5A, 0.033 Ohm, SOIC, Surface Mount VISHAY The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power device...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTA4153NT1G
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SC16850 |
Power MOSFET, N Channel, 20 V, 915 mA, 0.127 ohm, SC-75, Surface Mount ONSEMI The NTA4153NT1G is a N-channel Small Signal MOSFET with ESD protected gate. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers. • Low RDS (ON) improving ...
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N Channel | 20V | 915mA | 0.127ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4935BZ
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SC16696 |
SMD Dual MOSFET P Channel Transistor, SOIC, 6.9A, 30V ONSEMI The FDS4935BZ is a 30V Dual P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches...
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUP90P06-09L-E3
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SC16831 |
Power MOSFET, P Channel, 60 V, 90 A, 0.0074 ohm, TO-220AB, Through Hole VISHAY The SUP90P06-09L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 62°C/W Junction-to-ambient free air thermal resistance • 0.6°C/W Junction-to-case thermal resistance
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P Channel | 60V | 90A | 0.0074ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STE53NC50
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SC17022 |
MOSFET Transistor, N Channel, 53 A, 500 V, 0.08 ohm, 10 V, 3 V STMICROELECTRONICS The STE53NC50 is a 500V N-channel PowerMesh™II MOSFET with extremely high dv/dt capability. The layout refinements introduced greatly improve the area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate char...
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1+ €38.0562 (€46.81) 3+ €36.2474 (€44.58) 10+ €33.6532 (€41.39) |
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N Channel | 500V | 53A | 0.08ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000-D26Z
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SC15741 |
Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92 ONSEMI The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be...
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N Channel | 60V | 200mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002KT1G
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SC15991 |
Power MOSFET, N Channel, 60V, 380mA, 1.19 Ohm, SOT-23, SMD ONSEMI The 2N7002KT1G is a N-channel Small Signal MOSFET offers 60V drain source voltage and 320mA steady state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC and PDA applications. • Low RDS (ON) • S...
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N Channel | 60V | 380mA | 1.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBKS,115
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SC16798 |
Dual MOSFET, N Channel, 30V, 350mA, 1 ohm, SOT-363, Surface Mount NEXPERIA The NX3008NBKS is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a surface mounted device (SMD) plastic package using Trench MOSFET technology. Suitable for high-speed line driver and low-side loadswitch. • Very fast switching • Low thr...
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IRFR9024NTRPBF
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SC16835 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount INFINEON The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 11A | 0.175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV48XP,215
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SC16841 |
Power MOSFET, P Channel, 20 V, 3.5 A, 0.048 ohm, SOT-23, Surface Mount NEXPERIA The PMV48XP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • Logic-level...
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P Channel | 20V | 3.5A | 0.048ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18540Q5BT
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SC16687 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A TEXAS INSTRUMENTS The CSD18540Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and isolated converter primary side switch applications. ...
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N Channel | 60V | 100A | 0.0018ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH108,215
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SC16727 |
Power MOSFET, N Channel, 30 V, 1.9 A, 0.077 ohm, SOT-23, Surface Mount NEXPERIA The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications. • Very fast switching • Logic level compati...
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N Channel | 30V | 1.9A | 0.077ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP27N60KPBF
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SC15838 |
Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC VISHAY The IRFP27N60KPBF is a 600V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...
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N Channel | 600V | 27A | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR3110ZTRPBF
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SC15961 |
Power MOSFET, N Channel, 100V, 42A, 0.011 Ohm, TO-252AA, SMD INFINEON • HEXFET® power MOSFET specifically designed for Industrial applications • Advanced process technology • Ultra-low on-resistance • 175°C operating temperature • Fast switching • Repetitive avalanche allowed up to Tjmax
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N Channel | 100V | 42A | 0.011ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4559
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SC16692 |
SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A ONSEMI The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backligh...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN6140L-7
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SC16777 |
Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount DIODES INC. The DMN6140L-7 from DIODES is a 60V N Channel enhanced mode MOSFET, it's designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC to D...
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N Channel | 60V | 1.6A | 0.14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18537NQ5A
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SC17013 |
Power MOSFET, N Channel, 60 V, 50 A, 0.01 ohm, VSON, Surface Mount TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.01ohm
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N Channel | 60V | 50A | 0.01ohm |