MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP17N80C3XKSA1
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SC16976 |
Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole INFINEON The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. • New revolutionary high voltage technology • Extreme dV/dt rated • High peak current capability •...
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N Channel | 800V | 17A | 0.25ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP6NK60ZFP
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SC16906 |
Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 6A | 1.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0100TRPBF
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SC16769 |
Power MOSFET, N Channel, 100 V, 1.6 A, 0.178 ohm, SOT-23, Surface Mount INFINEON The IRLML0100TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 100V | 1.6A | 0.178ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP170PH6327XTSA1
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SC16865 |
SMD P Channel Power MOSFET, 60V, 1.9A, 0.239 Ohm, SOT-223 INFINEON • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogenfree according to IEC61249221
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P Channel | 60V | 1.9A | 0.239ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT007N06NATMA1
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SC16792 |
Power MOSFET, N Channel, 60 V, 300 A, 660 µohm, HSOF, Surface Mount INFINEON The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction...
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N Channel | 60V | 300A | 660µohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138K
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SC16726 |
Power MOSFET, N Channel, 50 V, 220 mA, 1.6 ohm, SOT-23, Surface Mount ONSEMI The BSS138K is a N-channel logic level enhancement mode Field Effect Transistor features low input capacitance, low-on resistance, low gate threshold voltage and fast switching speed. • Low input/output leakage • ±12V Gate-source voltage • Green product
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N Channel | 50V | 220mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002DW
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SC15983 |
Dual MOSFET, N Channel, 60V, 115mA, 1.6 Ohm, SOT-363, SMD ONSEMI The 2N7002DW is an N-channel Enhancement Mode Field Effect Transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed and low input/output leakage.
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138P,215
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SC16002 |
Power MOSFET, N Channel, 60V, 360mA, 0.9 Ohm, SOT-23, SMD NEXPERIA The BSS138P is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV • Logic Level Compatible • AEC-Q101 Qualified
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N Channel | 60V | 360mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7343TRPBF
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SC16808 |
Dual MOSFET, Complementary N and P Channel, 55V, 4.7A, 0.043 Ohm, SOIC, SMD INFINEON The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extre...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD17308Q3
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SC16684 |
SMD Power MOSFET N Channel NexFET Transistor, 30V, 47A TEXAS INSTRUMENTS The CSD17308Q3 is a 30V N-channel NexFET™ Power MOSFET with low thermal resistance and optimized for 5V gate drive. It is been designed to minimize losses in power conversion and optimized for control or synchronous FET applications. Suitable for point of ...
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N Channel | 30V | 47A | 0.0094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A13FTA
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SC16729 |
Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A13FTA is a -60V P-channel enhancement mode MOSFET with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switchi...
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P Channel | 60V | 1.1A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUZ11-NR4941
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SC15774 |
Power MOSFET, N Channel, 50V, 30A, 0.03 Ohm, TO-220AB ONSEMI The BUZ11_NR4941 is a 50V N-channel Power MOSFET designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow...
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N Channel | 50V | 30A | 0.03ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS8858CZ
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SC16689 |
SMD Dual MOSFET N and P Channel Transistor, PowerTrench, SOIC, 30V, 8.6A ONSEMI The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138AKAR
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SC16003 |
Power MOSFET, N Channel, 60V, 200mA, 2.7 Ohm, SOT-23, SMD NEXPERIA The BSS138AKA is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The single N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit appl...
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N Channel | 60V | 200mA | 2.7ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170F
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SC16817 |
SMD N CHannel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Automotive grade AEC-Q101 qualified • Drain to source Voltage (Vds) of 60V • Gate to source voltage (Vgs) of ±20 • Continuous drain current (Id) 0.15mA to 25°C • Power dissipation (pd) of 330mW • Operating temperature range -55°C to 150°C • Low on state...
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N Channel | 60V | 150mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7489DP-T1-GE3
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SC16825 |
Power MOSFET, P Channel, 100 V, 28 A, 0.033 ohm, PowerPAK SO, Surface Mount VISHAY The SI7489DP-T1-GE3 is a -100V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definit...
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P Channel | 100V | 28A | 0.033ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460BPBF
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SC16928 |
N Channel Power MOSFET, 500V, 20A, 0.2 Ohm, TO-247AC VISHAY • Suitable applications: displays for LCD or plasma TVs, server & telecom power supplies, industrial equipment such as welding, induction heating and motor drives
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N Channel | 500V | 20A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS214NWH6327XTSA1
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SC16812 |
Power MOSFET, N Channel, 20 V, 1.5 A, 0.106 ohm, SOT-323, Surface Mount INFINEON • N-channel OptiMOS™2 small signal transistor • Enhancement mode • Super logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 1.5A | 0.106ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP80NF10
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SC16882 |
Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-220, Through Hole STMICROELECTRONICS The STP80NF10 is a 100V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isola...
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N Channel | 100V | 80A | 0.012ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN339AN
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SC16732 |
Power MOSFET, N Channel, 20 V, 3 A, 0.035 ohm, SOT-23, Surface Mount ONSEMI The FDN339AN is a 20V N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power...
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N Channel | 20V | 3A | 0.035ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7461DP-T1-GE3
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SC16794 |
Power MOSFET, P Channel, 60 V, 8.6 A, 0.0115 ohm, PowerPAK SO, Surface Mount VISHAY The SI7461DP-T1-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Low thermal resistance PowerPAK® package with small size and low 1.07mm profile. Used in active clamp in intermediate DC/DC power supplies. • Halogen-free according to IEC 61249-2-21 definiti...
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P Channel | 60V | 8.6A | 0.0115ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS83PH6327XTSA1
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SC16766 |
Power MOSFET, P Channel, 60 V, 330 mA, 1.4 ohm, SOT-23, Surface Mount INFINEON The BSS83P H6327 is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. • Enhancement-mode • Avalan...
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P Channel | 60V | 330mA | 1.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TSM2314CX RFG
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SC16741 |
Power MOSFET, N Channel, 20 V, 4.9 A, 0.027 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2314CX is a N-channel MOSFET with advanced Trench process technology and ±12V gate source voltage. • High Density Cell Design for Ultra Low On-resistance
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N Channel | 20V | 4.9A | 0.027ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2305UX-7
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SC16903 |
Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount DIODES INC. This MOSFET is designed to minimise the on-state resistance, yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for backlighting, power management functions, DC/DC converters and motor...
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P Channel | 20V | 4.2A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBE30PBF
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SC16997 |
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...
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N Channel | 800V | 4.1A | 3ohm |