MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6402PBF
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SC07010 |
Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount INFINEON The IRLML6402PBF from International Rectifier is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to ...
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P Channel | 20V | 3.7A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLU120NPBF
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SC11073 |
Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole INFINEON The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated ...
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1+ €0.7854 (€0.97) 25+ €0.6307 (€0.78) 100+ €0.4641 (€0.57) 250+ €0.4165 (€0.51) |
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N Channel | - | - | 0.185ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84P
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SC07003 |
Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170mA • Drain Source On State Resistance : 8ohm
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P Channel | 60V | 170mA | 8ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQP12N60C
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SC11098 |
Power MOSFET, N Channel, 600 V, 12 A, 0.53 ohm, TO-220, Through Hole ONSEMI The FQP12N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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1+ €2.3681 (€2.91) 25+ €2.2491 (€2.77) 100+ €2.1539 (€2.65) 250+ €1.9992 (€2.46) |
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N Channel | 600V | 12A | 0.53ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R099CP
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SC11156 |
Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 650V • Continuous Drain Current Id : 31A • Drain Source On State Resistance : 0.09ohm
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N Channel | 650V | 31A | 0.09ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP32N50KPBF
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SC11173 |
Power MOSFET, N Channel, 500 V, 32 A, 0.16 ohm, TO-247AC, Through Hole VISHAY The IRFP32N50KPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...
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1+ €8.6751 (€10.67) 25+ €8.3181 (€10.23) |
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N Channel | 500V | 32A | 0.16ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF840PBF
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SC11102 |
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole VISHAY The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial...
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1+ €1.7969 (€2.21) 25+ €1.5351 (€1.89) |
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N Channel | 500V | 8A | 0.85ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP30NF10
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SC08226 |
Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole STMICROELECTRONICS The STP30NF10 is a 100V N-channel Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignm...
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1+ €0.9877 (€1.21) 25+ €0.833 (€1.02) |
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N Channel | 100V | 35A | 0.045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP60NF06
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SC08254 |
Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...
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1+ €1.0829 (€1.33) 25+ €0.7616 (€0.94) 100+ €0.5712 (€0.70) |
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N Channel | 60V | 60A | 0.016ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFI830GPBF
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SC11142 |
Power MOSFET, N Channel, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Through Hole VISHAY The IRFI830GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The mouldin...
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1+ €1.4637 (€1.80) 25+ €1.2971 (€1.60) |
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N Channel | 500V | 3.1A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP3NK60ZFP
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SC09919 |
Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-220FP, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 2.4A • Drain Source On State Resistance : 3.3ohm
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1+ €0.714 (€0.88) 25+ €0.6307 (€0.78) 100+ €0.5712 (€0.70) |
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N Channel | 600V | 2.4A | 3.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP70N06
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SC08223 |
Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole ONSEMI The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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1+ €1.4994 (€1.84) 25+ €1.1543 (€1.42) 100+ €1.0234 (€1.26) |
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N Channel | 60V | 70A | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBF170
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SC06989 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4106F
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SC07002 |
Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount DIODES INC. The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating
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N Channel | 60V | 200mA | 2.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP17P06
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SC08206 |
Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...
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P Channel | 60V | 17A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW14NK50Z.
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SC06408 |
Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 14A • Drain Source On State Resistance : 0.34ohm
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N Channel | 500V | 14A | 0.34ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP064NPBF
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SC11166 |
Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through Hole INFINEON The IRFP064NPBF is utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the ...
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N Channel | 55V | 98A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD4243
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SC11198 |
Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount ONSEMI The FDD4243 is a P-channel MOSFET produced using PowerTrench® technology to deliver low RDS (ON) and optimized Bvdss capability to offer superior performance benefit in the applications. • High performance Trench technology for extremely low RDS (ON)
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P Channel | 40V | 14A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520NPBF
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SC08219 |
Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole INFINEON The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | - | - | 0.48ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP12NM50
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SC11151 |
Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole STMICROELECTRONICS The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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N Channel | 550V | 12A | 0.35ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9240
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SC06075 |
Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm
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P Channel | 200V | 12A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU5305PBF
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SC11065 |
Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Ultra low on-resistance • Fast switching • Fully avalanche rated • Dynamic dv/dt rating
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P Channel | 55V | 22A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLD024PBF
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SC07023 |
Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole VISHAY The IRLD024PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which ...
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N Channel | 60V | 2.5A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK80Z.
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SC06405 |
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm
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N Channel | 800V | 9A | 0.78ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4321PBF
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SC11179 |
Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole INFINEON The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...
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N Channel | 150V | 78A | 0.012ohm |