Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD85P04P4L06ATMA1
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SC15972 |
Power MOSFET, P Channel, 40V, 85A, 0.0053 Ohm, TO-252 (DPAK), SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 85A • Drain Source On State Resistance : 0.0053ohm • Transistor Case Style : TO-252 (DPAK) • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.7V • Power Dissipation : 88W • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Product Range : OptiMOS P2 • Qualification : AEC-Q101
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P Channel | 40V | 85A | 0.0053ohm | TO-252 (DPAK) | Surface Mount | 10V | 1.7V | 88W | 3Pins | 175°C | OptiMOS P2 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP2104N3-G
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SC16920 |
P Channel Power MOSFET, Vertical DMOS FET, 40V, 175mA, 6 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 40V | 175mA | 6ohm | TO-92 | Through Hole | 10V | 2V | 740mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9321TRPBF
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SC15976 |
Power MOSFET, P Channel, 30V, 15A, 0.0059 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 15A • Drain Source On State Resistance : 0.0059ohm • Transistor Case Style : SOIC • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.8V • Power Dissipation : 2.5W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : HEXFET
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P Channel | 30V | 15A | 0.0059ohm | SOIC | Surface Mount | 10V | 1.8V | 2.5W | 8Pins | 150°C | HEXFET | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQM120P06-07L_GE3
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SC16844 |
SMD P Channel Power MOSFET, 60V, 120A, 0.0056 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100% Rg and UIS Tested
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P Channel | 60V | 120A | 0.0056ohm | TO-263 (D2PAK) | Surface Mount | 10V | 2V | 375W | 3Pins | 175°C | TrenchFET | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6401TRPBF
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SC16733 |
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount INFINEON The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...
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P Channel | 12V | 4.3A | 0.05ohm | SOT-23 | Surface Mount | 4.5V | 550mV | 1.3W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD2955T4G
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SC16860 |
Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...
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P Channel | 60V | 12A | 0.155ohm | TO-252 (DPAK) | Surface Mount | 10V | 2.8V | 55W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP4NK60ZFP
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SC16986 |
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 4A | 2ohm | TO-220FP | Through Hole | 10V | 3.75V | 25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9120NTRPBF
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SC16875 |
Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 100V | 6.6A | 0.48ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 40W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBG20PBF
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SC16930 |
Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole VISHAY The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...
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N Channel | 1kV | 1.3A | 11.5ohm | TO-220AB | Through Hole | 10V | 4V | 50W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB3034PBF
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SC16937 |
Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole INFINEON The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...
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N Channel | 40V | 195A | 0.0014ohm | TO-220AB | Through Hole | 10V | 2.5V | 375W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NM60FD
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SC16952 |
N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB STMICROELECTRONICS The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...
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N Channel | 600V | 11A | 0.4ohm | TO-220AB | Through Hole | 10V | 4V | 160W | 3Pins | 150°C | FDmesh | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R017C7XKSA1
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SC17026 |
Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole INFINEON 600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...
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N Channel | 600V | 109A | 0.015ohm | TO-247 | Through Hole | 10V | 3.5V | 446W | 3Pins | 150°C | CoolMOS C7 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUD50P04-08-GE3
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SC16743 |
Power MOSFET, P Channel, 40 V, 50 A, 0.0067 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50P04-08-GE3 from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications. • Drain to source voltage (Vds) of -40V • Gat...
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P Channel | 40V | 50A | 0.0067ohm | TO-252 (DPAK) | Surface Mount | 10V | 1V | 73.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDH44N50
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SC17002 |
Power MOSFET, General Purpose, N Channel, 500 V, 44 A, 0.11 ohm, TO-247, Through Hole ONSEMI The FDH44N50 is a 500V N-channel Power MOSFET based on planar stripe and DMOS technology. This SMPS series MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's r...
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N Channel | 500V | 44A | 0.11ohm | TO-247 | Through Hole | 10V | 3.15V | 750W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4115PBF
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SC16837 |
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole INFINEON The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 150V | 104A | 0.0093ohm | TO-220AB | Through Hole | 20V | 5V | 380W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB4030PBF
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SC16936 |
Power MOSFET, N Channel, 100 V, 110 A, 0.0034 ohm, TO-220AB, Through Hole INFINEON The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS,...
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N Channel | 100V | 110A | 0.0034ohm | TO-220AB | Through Hole | 10V | 2.5V | 370W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7416TRPBF
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SC15957 |
Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.02ohm • Transistor Case Style : SOIC • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.04V • Power Dissipation : 2.5W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : HexFET
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P Channel | 30V | 10A | 0.02ohm | SOIC | Surface Mount | 10V | 2.04V | 2.5W | 8Pins | 150°C | HexFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF27P06
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SC16932 |
Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole ONSEMI The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...
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P Channel | 60V | 17A | 0.055ohm | TO-220F | Through Hole | 10V | 2V | 47W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB072N15N3GATMA1
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SC16960 |
Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...
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N Channel | 150V | 100A | 0.0058ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS107P
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SC16884 |
N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line DIODES INC. • Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0
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N Channel | 200V | 120mA | 30ohm | E-Line | Through Hole | 5V | 3V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4468PBF
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SC15830 |
Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC, INFINEON The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 290A | 0.002ohm | TO-247AC | Through Hole | 20V | 4V | 520W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS806NEH6327XTSA1
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SC16876 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 2.3A | 0.041ohm | SOT-23 | Surface Mount | 2.5V | 550mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD25P03LT4G
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SC16886 |
Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...
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P Channel | 30V | 25A | 0.056ohm | TO-252 (DPAK) | Surface Mount | 5V | 1.6V | 75W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4227PBF
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SC17001 |
Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole INFINEON The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...
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N Channel | 200V | 65A | 0.0197ohm | TO-220AB | Through Hole | 10V | 5V | 330W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIHG20N50C-E3
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SC15833 |
Power MOSFET, N Channel, 500V, 20A, 0.225 ohm, TO-247 VISHAY The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability. • Halogen-free according to IEC 61249-2-21 definition • Low figure of merit Ron X Qg • 100% Avalanche rated • dV/dt Ruggedness • Improved Trr/Q...
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N Channel | 500V | 20A | 0.225ohm | TO-247 | Through Hole | 10V | 5V | 292W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||