Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002E-7-F
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SC21289 |
Power MOSFET, N Channel, 60 V, 250 mA, 1.6 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 1.6ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 370mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : 2N7002E • Qualification : AEC-Q101
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N Channel | 60V | 250mA | 1.6ohm | SOT-23 | Surface Mount | 10V | 2.5V | 370mW | 3Pins | 150°C | 2N7002E | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLL2705TRPBF
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SC21342 |
Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount INFINEON The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 3.8A | 0.04ohm | SOT-223 | Surface Mount | 10V | 2V | 1W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2246TRPBF
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SC21343 |
Power MOSFET, P Channel, 20 V, 2.6 A, 0.09 ohm, SOT-23, Surface Mount INFINEON The IRLML2246TRPBF is a P-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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P Channel | 20V | 2.6A | 0.09ohm | SOT-23 | Surface Mount | 4.5V | 1.1V | 1.3W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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T2N7002BK,LM(T
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SC21553 |
Power MOSFET, N Channel, 60 V, 400 mA, 1.05 ohm, SOT-23, Surface Mount TOSHIBA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 400mA • Drain Source On State Resistance : 1.05ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.1V • Power Dissipation : 320mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 400mA | 1.05ohm | SOT-23 | Surface Mount | 10V | 2.1V | 320mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138L
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SC21473 |
Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 2.78ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 5V • Gate Source Threshold Voltage Max : 1.25V • Power Dissipation : 350mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 50V | 200mA | 2.78ohm | SOT-23 | Surface Mount | 5V | 1.25V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN10H220L-7
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SC21309 |
Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. DMN10H220L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications and loa...
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N Channel | 100V | 1.4A | 0.22ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMN3A01F
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SC21333 |
Power MOSFET, N Channel, 30 V, 2 A, 0.12 ohm, SOT-23, Surface Mount DIODES INC. The ZXMN3A01F is a N-channel enhancement-mode new generation TRENCH MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage application...
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N Channel | 30V | 2A | 0.12ohm | SOT-23 | Surface Mount | 10V | 1V | 806mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002H6327XTSA2
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SC21335 |
Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount INFINEON The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free
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N Channel | 60V | 300mA | 1.6ohm | SOT-23 | Surface Mount | 10V | 2.1V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STFW3N150
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SC21522 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, TO-3PF, Through Hole STMICROELECTRONICS • 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin TO-3PF package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4mm typical • Designed us...
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N Channel | 1.5kV | 2.5A | 6ohm | TO-3PF | Through Hole | 10V | 4V | 63W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3013SFV-7
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SC21312 |
Power MOSFET, P Channel, 30 V, 12 A, 0.0095 ohm, PowerDI3333, Surface Mount DIODES INC. DMP3013SFV-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications ...
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P Channel | 30V | 12A | 0.0095ohm | PowerDI3333 | Surface Mount | 10V | 3V | 940mW | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD5867NLT4G
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SC21486 |
Power MOSFET, N Channel, 60 V, 20 A, 0.026 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and ...
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N Channel | 60V | 20A | 0.026ohm | TO-252 (DPAK) | Surface Mount | 10V | 1.8V | 36W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP80P03P4L04AKSA2
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SC20575 |
Power Mosfet Transistor, P Channel, 30V, 80A, TO-220 INFINEON • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection
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P Channel | 30V | 80A | 0.0037ohm | TO-220 | Through Hole | 10V | 1.5V | 137W | 3Pins | 175°C | OptiMOS-P2 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP20N60C3XKSA1
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SC21344 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole INFINEON The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 0.19ohm | TO-220 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TSM2306CX RFG
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SC21549 |
Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. • ±20V Gate-source voltage • 3.5A Continuous source current • 75°C/W Junction-to-case thermal resistance • 130°C/...
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N Channel | 30V | 3.5A | 0.046ohm | SOT-23 | Surface Mount | 10V | 1V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP4051LK3-13
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SC21314 |
Power MOSFET, P Channel, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Surface Mount DIODES INC. DMP4051LK3-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications...
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P Channel | 40V | 10.5A | 0.051ohm | TO-252 (DPAK) | Surface Mount | 10V | 3V | 4.18W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV45EN2R
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SC21453 |
Power MOSFET, N Channel, 30 V, 5.1 A, 0.035 ohm, SOT-23, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 5.1A • Drain Source On State Resistance : 0.035ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.5V • Power Dissipation : 510mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 30V | 5.1A | 0.035ohm | SOT-23 | Surface Mount | 10V | 1.5V | 510mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NXV75UPR
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SC21426 |
Power MOSFET, P Channel, 20 V, 1.8 A, 0.075 ohm, SOT-23, Surface Mount NEXPERIA • Channel Type : P Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 1.8A • Drain Source On State Resistance : 0.075ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 4.5V • Gate Source Threshold Voltage Max : 700mV • Power Dissipation : 340mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : Trench
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P Channel | 20V | 1.8A | 0.075ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 340mW | 3Pins | 150°C | Trench | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002W-7-F
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SC21290 |
Power MOSFET, N Channel, 60 V, 115 mA, 13.5 ohm, SOT-323, Surface Mount DIODES INC. The 2N7002W-7-F is a N-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • Fast ...
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N Channel | 60V | 115mA | 13.5ohm | SOT-323 | Surface Mount | 10V | 2V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM55P06-19L-E3
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SC21612 |
Power MOSFET, P Channel, 60 V, 55 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM55P06-19L-E3 is a -60V P-channel TrenchFET® Power MOSFET.
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P Channel | 60V | 55A | 0.015ohm | TO-263 (D2PAK) | Surface Mount | 10V | 1V | 125W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319DDS-T1-GE3
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SC21593 |
Power MOSFET, P Channel, 40 V, 3.6 A, 0.062 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 3.6A • Drain Source On State Resistance : 0.062ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1.7W • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : TrenchFET Gen III
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P Channel | 40V | 3.6A | 0.062ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.7W | 3Pins | 150°C | TrenchFET Gen III | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF730APBF
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SC21576 |
Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole VISHAY The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective COSS specified • Simple drive requirem...
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N Channel | 400V | 5.5A | 1ohm | TO-220AB | Through Hole | 10V | 4.5V | 74W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR110PBF
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SC21578 |
Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount VISHAY • N-channel power MOSFET in DPAK (TO-252) package • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling
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N Channel | 100V | 4.3A | 0.54ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3806PBF
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SC20270 |
Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-220AB, Through Hole INFINEON The IRFB3806PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized capacit...
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N Channel | 60V | 43A | 0.0126ohm | TO-220AB | Through Hole | 20V | 4V | 71W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9630PBF
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SC21577 |
Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole VISHAY The IRF9630PBF is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerc...
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P Channel | 200V | 6.5A | 0.8ohm | TO-220AB | Through Hole | 10V | 4V | 74W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD20NF06LT4
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SC21521 |
Power MOSFET, N Channel, 60 V, 24 A, 0.032 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...
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N Channel | 60V | 24A | 0.032ohm | TO-252 (DPAK) | Surface Mount | 10V | 2.5V | 60W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||