MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002H6327XTSA2
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SC21335 |
Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount INFINEON The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free
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N Channel | 60V | 300mA | 1.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV30UN2R
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SC21452 |
Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount NEXPERIA The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...
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N Channel | 20V | 5.4A | 0.024ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138L
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SC21473 |
Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 2.78ohm
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N Channel | 50V | 200mA | 2.78ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ2389ES-T1_GE3
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SC21607 |
Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm
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P Channel | 40V | 4.1A | 0.094ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN62D0U-7
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SC21310 |
Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount DIODES INC. DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...
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N Channel | 60V | 380mA | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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1+ €38.8557 (€47.79) 5+ €36.2466 (€44.58) 10+ €34.7256 (€42.71) |
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N Channel | 500V | 80A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQU17P06
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SC11064 |
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole ONSEMI The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...
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P Channel | 60V | 12A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP30N06
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SC16931 |
Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole ONSEMI The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...
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N Channel | 60V | 30A | 0.031ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW20N60C3FKSA1
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SC16942 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole INFINEON The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...
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1+ €5.5809 (€6.86) 10+ €4.4694 (€5.50) 100+ €3.5685 (€4.39) |
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N Channel | 650V | 20.7A | 0.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138PW,115
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SC16000 |
Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD NEXPERIA The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 320mA | 0.9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4568PBF
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SC11170 |
Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole INFINEON The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 150V | 171A | 0.0048ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4110PBF
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SC11168 |
Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole INFINEON The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 120A | 0.0037ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9240
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SC06075 |
Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm
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P Channel | 200V | 12A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP19N20
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SC08208 |
Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...
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N Channel | 200V | 19.4A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9014PBF
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SC11069 |
Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole VISHAY The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling
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P Channel | 60V | 5.6A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4310A
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SC06969 |
Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.
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N Channel | 100V | 900mA | 0.65ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD120PBF
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SC07021 |
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole VISHAY The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...
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N Channel | 100V | 1.3A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NM50FD
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SC11175 |
Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole STMICROELECTRONICS The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...
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N Channel | 500V | 20A | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP23N50LPBF
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SC11180 |
Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole VISHAY The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...
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N Channel | 500V | 23A | 0.235ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA170N06.
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SC06320 |
Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170A • Drain Source On State Resistance : 0.0056ohm
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N Channel | 60V | 170A | 0.0056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19537Q3T
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SC16995 |
SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0121ohm
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N Channel | 100V | 50A | 0.0121ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BK,215
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SC15984 |
Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD NEXPERIA The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...
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N Channel | 60V | 350mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5630
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SC16780 |
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount ONSEMI The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...
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N Channel | 60V | 1.7A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS107P
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SC16884 |
N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line DIODES INC. • Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0
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N Channel | 200V | 120mA | 30ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDA59N30
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SC16993 |
Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole ONSEMI The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...
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N Channel | 300V | 59A | 0.047ohm |