MOSFET Transistors

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2N7002H6327XTSA2
2N7002H6327XTSA2 - Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount

SC21335

Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount

INFINEON

The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free

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N Channel 60V 300mA 1.6ohm
PMV30UN2R
PMV30UN2R - Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount

SC21452

Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...

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N Channel 20V 5.4A 0.024ohm
BSS138L
BSS138L - Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount

SC21473

Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 2.78ohm

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N Channel 50V 200mA 2.78ohm
SQ2389ES-T1_GE3
SQ2389ES-T1_GE3 - Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

SC21607

Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm

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P Channel 40V 4.1A 0.094ohm
DMN62D0U-7
DMN62D0U-7 - Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

SC21310

Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

DIODES INC.

DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...

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N Channel 60V 380mA 2ohm
IXFN80N50
IXFN80N50 - MOSFET Transistor, N Channel, 80A, 10V,

SC17017

MOSFET Transistor, N Channel, 80A, 10V,

IXYS SEMICONDUCTOR

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...

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N Channel 500V 80A 0.055ohm
FQU17P06
FQU17P06 - Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

SC11064

Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

ONSEMI

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...

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P Channel 60V 12A 0.11ohm
FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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N Channel 60V 30A 0.031ohm
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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N Channel 650V 20.7A 0.19ohm
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 320mA 0.9ohm
IRFP4568PBF
IRFP4568PBF - Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole

SC11170

Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 150V 171A 0.0048ohm
IRFP4110PBF
IRFP4110PBF - Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole

SC11168

Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 120A 0.0037ohm
IRFP9240
IRFP9240 - Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole

SC06075

Power MOSFET, P Channel, 200 V, 12 A, 0.5 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 12A • Drain Source On State Resistance : 0.5ohm

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P Channel 200V 12A 0.5ohm
FQP19N20
FQP19N20 - Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

SC08208

Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...

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N Channel 200V 19.4A 0.12ohm
IRFU9014PBF
IRFU9014PBF - Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

SC11069

Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling

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P Channel 60V 5.6A 0.5ohm
ZVN4310A
ZVN4310A - Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

SC06969

Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.

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N Channel 100V 900mA 0.65ohm
IRFD120PBF
IRFD120PBF - Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

SC07021

Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

VISHAY

The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...

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N Channel 100V 1.3A 0.27ohm
STW20NM50FD
STW20NM50FD - Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

SC11175

Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...

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N Channel 500V 20A 0.25ohm
IRFP23N50LPBF
IRFP23N50LPBF - Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

SC11180

Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

VISHAY

The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...

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N Channel 500V 23A 0.235ohm
FQA170N06.
FQA170N06. - Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

SC06320

Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 170A • Drain Source On State Resistance : 0.0056ohm

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N Channel 60V 170A 0.0056ohm
CSD19537Q3T
CSD19537Q3T - SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

SC16995

SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

TEXAS INSTRUMENTS

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0121ohm

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N Channel 100V 50A 0.0121ohm
2N7002BK,215
2N7002BK,215 - Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

SC15984

Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...

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N Channel 60V 350mA 1ohm
FDN5630
FDN5630 - Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

SC16780

Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...

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N Channel 60V 1.7A 0.1ohm
BS107P
BS107P - N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

SC16884

N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

DIODES INC.

• Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0

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N Channel 200V 120mA 30ohm
FDA59N30
FDA59N30 - Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole

SC16993

Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole

ONSEMI

The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...

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N Channel 300V 59A 0.047ohm