Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319CDS-T1-GE3
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SC16704 |
Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount VISHAY The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 40V | 4.4A | 0.064ohm | SOT-23 | Surface Mount | 10V | 1.2V | 1.25W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH103,215
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SC19198 |
Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD NEXPERIA The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...
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N Channel | 30V | 850mA | 0.4ohm | TO-236AB | Surface Mount | 4.5V | 400mV | 750mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123,215
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SC19225 |
Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD NEXPERIA The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...
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N Channel | 100V | 150mA | 3.5ohm | SOT-23 | Surface Mount | 10V | 2V | 250mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319DS-T1-E3
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SC19376 |
Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD VISHAY The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...
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P Channel | 40V | 3A | 0.065ohm | TO-236 | Surface Mount | 10V | 3V | 750mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ2362ES-T1_GE3
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SC19375 |
Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD VISHAY • TrenchFET® power MOSFET • 100% Rg and UIS tested
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N Channel | 60V | 4.3A | 0.125ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP3203N3-G
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SC16929 |
Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 30V | 650mA | 0.6ohm | TO-92 | Through Hole | 10V | 3.5V | 740mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF510PBF
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SC15755 |
Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB VISHAY The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...
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N Channel | 100V | 5.6A | 0.54ohm | TO-220AB | Through Hole | 10V | 4V | 43W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP260NPBF
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SC16898 |
N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC INFINEON The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 50A | 0.04ohm | TO-247AC | Through Hole | 10V | 4V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4171PT1G
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SC16782 |
Power MOSFET, P Channel, 30 V, 3.5 A, 0.05 ohm, SOT-23, Surface Mount ONSEMI The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...
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P Channel | 30V | 3.5A | 0.05ohm | SOT-23 | Surface Mount | 10V | 1.15V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS308PEH6327XTSA1
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SC16736 |
Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount INFINEON The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection
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P Channel | 30V | 2A | 0.062ohm | SOT-23 | Surface Mount | 10V | 1.5V | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV304P
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SC16761 |
Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount ONSEMI The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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P Channel | 25V | 460mA | 1.22ohm | SOT-23 | Surface Mount | 2.7V | 860mV | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF520NPBF
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SC08214 |
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...
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N Channel | 100V | 9.7A | 0.2ohm | - | Through Hole | 10V | 4V | 47W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306F
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SC16881 |
SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23 DIODES INC. The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.
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P Channel | 60V | 90mA | 14ohm | SOT-23 | Surface Mount | 10V | 3.5V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP80P06PHXKSA1
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SC15768 |
Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220 INFINEON The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...
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P Channel | 60V | 80A | 0.021ohm | TO-220 | Through Hole | 10V | 3V | 340W | 3Pins | 175°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2302CDS-T1-GE3
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SC16836 |
Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount VISHAY The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage
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N Channel | 20V | 2.9A | 0.045ohm | TO-236 | Surface Mount | 8V | 850mV | 710mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0040TRPBF
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SC16758 |
Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount INFINEON The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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N Channel | 40V | 3.6A | 0.044ohm | SOT-23 | Surface Mount | 10V | 1.8V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP47P06
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SC16959 |
Power MOSFET, P Channel, 60 V, 47 A, 0.021 ohm, TO-220, Through Hole ONSEMI The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche ener...
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P Channel | 60V | 47A | 0.021ohm | TO-220 | Through Hole | 10V | 4V | 160W | 3Pins | 175°C | QFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP4065S-7
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SC15956 |
Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD DIODES INC. DMP4065S-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...
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P Channel | 40V | 2.4A | 0.08ohm | SOT-23 | Surface Mount | 10V | 3V | 720mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC093N04LSGATMA1
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SC16751 |
Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount INFINEON The BSC093N04LS G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high sys...
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N Channel | 40V | 49A | 0.0078ohm | PG-TDSON | Surface Mount | 10V | 1.2V | 35W | 8Pins | 150°C | OptiMOS 3 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP613PH6327XTSA1
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SC16854 |
Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount INFINEON The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...
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P Channel | 60V | 2.9A | 0.11ohm | SOT-223 | Surface Mount | 10V | 3V | 1.8W | 4Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3206PBF
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SC17003 |
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole INFINEON The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...
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N Channel | 60V | 210A | 0.003ohm | TO-220AB | Through Hole | 10V | 4V | 300W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2030TRPBF
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SC16739 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount INFINEON The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...
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N Channel | 30V | 2.7A | 0.08ohm | SOT-23 | Surface Mount | 10V | 1.7V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD30NF06LT4
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SC16912 |
Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...
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N Channel | 60V | 35A | 0.022ohm | TO-252 (DPAK) | Surface Mount | 2.5V | 1.7V | 70W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV20ENR
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SC16980 |
SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB NEXPERIA The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...
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N Channel | 30V | 6A | 0.017ohm | TO-236AB | Surface Mount | 10V | 1.5V | 510mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000
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SC06951 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole ONSEMI The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...
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N Channel | 60V | 200mA | 5ohm | TO-92 | Through Hole | 10V | 2.1V | 400mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||