Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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STP60NF06
STP60NF06 - Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole

SC08254

Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...

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N Channel 60V 60A 0.016ohm TO-220 Through Hole 10V 2V 110W 3Pins 175°C - -
IRLU024NPBF
IRLU024NPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

SC11074

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel 55V 17A 0.065ohm - Through Hole 10V 2V 46W 3Pins 175°C - -
IRF830APBF
IRF830APBF - Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

SC11087

Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

VISHAY

The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...

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N Channel 500V 5A 1.4ohm TO-220AB Through Hole 10V 4.5V 74W 3Pins 150°C - -
SPA20N60C3
SPA20N60C3 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

SC11115

Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

INFINEON

The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 650V 20.7A 0.16ohm TO-220AB Through Hole 10V 3V 34.5W 3Pins 150°C - -
BSS138....
BSS138.... - MOSFET, N, SOT23

SC06981

MOSFET, N, SOT23

ONSEMI

• Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.3V • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- 50V 220mA - SOT-23 - 10V 1.3V - 3Pins 150°C - -
IRF830PBF
IRF830PBF - Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole

SC11101

Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...

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N Channel 500V 4.5A 1.5ohm TO-220AB Through Hole 10V 4V 74W 3Pins 150°C - -
IRFP264PBF
IRFP264PBF - Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole

SC11174

Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole

VISHAY

The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...

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N Channel 250V 38A 0.075ohm TO-247AC Through Hole 10V 4V 280W 3Pins 150°C - -
IRFR9110PBF
IRFR9110PBF - Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

SC11203

Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...

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P Channel 100V 3.1A 1.2ohm TO-252 (DPAK) Surface Mount 10V 4V 25W 3Pins 150°C - -
IRF9Z34NPBF
IRF9Z34NPBF - Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

SC11120

Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 17A 0.1ohm - Through Hole 10V 4V 56W 3Pins 175°C - -
2N7002
2N7002 - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

SC11027

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

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N Channel 60V 115mA 7.5ohm - Surface Mount 10V 2.1V 200mW 3Pins 150°C - -
IRFP4321PBF
IRFP4321PBF - Power MOSFET, N Channel, 150 V, 78 A, 0.0155 ohm, TO-247AC, Through Hole

SC11179

Power MOSFET, N Channel, 150 V, 78 A, 0.0155 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...

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N Channel 150V 78A 0.0155ohm TO-247AC Through Hole 10V 5V 310mW 3Pins 175°C - -
IRFP240PBF
IRFP240PBF - Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

SC10643

Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

VISHAY

The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 200V 20A 0.18ohm TO-247AC Through Hole 10V 4V 150W 3Pins 150°C - -
STW10NK80Z.
STW10NK80Z. - Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

SC06405

Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 160W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 800V 9A 0.78ohm TO-247 Through Hole 10V 3.75V 160W 3Pins 150°C - -
ZVN4306A
ZVN4306A - Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole

SC06968

Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole

DIODES INC.

ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters. • Drain-source voltage is 60V at TA = 25°C • Gate-source voltage is ±20V at TA = 25°C • Continuous drain current is 1.1A at TA = 25°C • Practical continuous dra...

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N Channel 60V 1.1A 0.45ohm TO-226AA Through Hole 10V 3V 850mW 3Pins 150°C - -
STP16NF06L..
STP16NF06L.. - Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

SC11129

Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...

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N Channel 60V 16A 0.07ohm TO-220 Through Hole 10V 1V 45W 3Pins 175°C - -
IRL540NPBF
IRL540NPBF - Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

SC11124

Power MOSFET, N Channel, 100 V, 36 A, 0.044 ohm, TO-220AB, Through Hole

INFINEON

The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 100V 36A 0.044ohm - Through Hole 10V 2V 140W 3Pins 175°C - -
VNB35N07TR-E
VNB35N07TR-E - Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

SC11022

Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

STMICROELECTRONICS

The VNB35N07TR-E is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clam...

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N Channel 80V 18A 0.028ohm TO-263 (D2PAK) Surface Mount 10V 3V 125W 3Pins 150°C - -
ZVP4424G
ZVP4424G - Power MOSFET, P Channel, 240 V, 480 mA, 9 ohm, SOT-223, Surface Mount

SC11059

Power MOSFET, P Channel, 240 V, 480 mA, 9 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVP4424G is a P-channel enhancement-mode Vertical DMOSFET with moulded plastic case and matte tin finish terminals. It is suitable for electronic hook switches and battery powered equipment applications. • Low threshold and fast switching • Halogen-fre...

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P Channel 240V 480mA 9ohm SOT-223 Surface Mount 10V 1.4V 2.5W 4Pins 150°C - -
IRFP250NPBF
IRFP250NPBF - Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

SC11079

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

INFINEON

The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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N Channel 200V 30A 0.075ohm - Through Hole 10V 4V 214W 3Pins 175°C - -
IRFP4368PBF
IRFP4368PBF - Power MOSFET, N Channel, 75 V, 350 A, 0.00185 ohm, TO-247AC, Through Hole

SC11167

Power MOSFET, N Channel, 75 V, 350 A, 0.00185 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...

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N Channel 75V 350A 0.00185ohm - Through Hole 20V 4V 520W 3Pins 175°C - -
FQA24N60.
FQA24N60. - Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole

SC06316

Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 23.5A • Drain Source On State Resistance : 0.24ohm • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 310W • No. of Pins : 3Pins • Operating Temperature Max : 150°C

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N Channel 600V 23.5A 0.24ohm - Through Hole 10V 3V 310W 3Pins 150°C - -
VNP10N07-E
VNP10N07-E - Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

SC11011

Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...

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N Channel 70V 10A 0.1ohm TO-220 Through Hole 10V 3V 50W 3Pins 150°C - -
IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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N Channel - - 0.014ohm - Through Hole - - 200W 3Pins - - -
FDN358P
FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.125 ohm, SOT-23, Surface Mount

SC07005

Power MOSFET, P Channel, 30 V, 1.6 A, 0.125 ohm, SOT-23, Surface Mount

ONSEMI

The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...

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P Channel 30V 1.6A 0.125ohm - Surface Mount 10V 1.9V 560mW 3Pins 150°C - -
RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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N Channel 100V 12A 0.2ohm - Through Hole 5V 2V 60W 3Pins 150°C - -