Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44NPBF
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SC08251 |
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole INFINEON The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | - | - | 0.0175ohm | - | Through Hole | - | - | 94W | 3Pins | - | HEXFET Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP36NF06L
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SC11127 |
Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole STMICROELECTRONICS • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application
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N Channel | 60V | 30A | 0.032ohm | TO-220 | Through Hole | 10V | 2.5V | 70W | 3Pins | 175°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPD04N80C3
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SC11153 |
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm • Transistor Case Style : TO-252 (DPAK) • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 63W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 800V | 4A | 1.1ohm | TO-252 (DPAK) | Surface Mount | 10V | 3V | 63W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS7002A
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SC06992 |
Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount ONSEMI The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...
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N Channel | - | - | 2ohm | - | Surface Mount | - | - | 300mW | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75339P3
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SC12748 |
Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole ONSEMI The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...
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N Channel | 55V | 75A | 0.012ohm | TO-220AB | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310F
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SC07001 |
Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...
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N Channel | 100V | 100mA | 10ohm | SOT-23 | Surface Mount | 10V | 2.4V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2907ZPBF
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SC08253 |
Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole INFINEON The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...
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1+ €2.8441 (€3.50) 25+ €2.5466 (€3.13) 100+ €2.2729 (€2.80) |
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N Channel | - | - | 0.0045ohm | - | Through Hole | - | - | 330W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3415PBF
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SC11109 |
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole INFINEON The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...
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N Channel | - | - | 0.042ohm | - | Through Hole | - | - | 150W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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N Channel | - | - | 0.0065ohm | - | Through Hole | - | - | 170W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | TO-247 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520PBF
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SC11123 |
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole VISHAY The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 6A | 0.6ohm | TO-220AB | Through Hole | 10V | 4V | 40W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN358P
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SC07005 |
Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount ONSEMI The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...
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P Channel | - | - | 0.2ohm | - | Surface Mount | - | - | 560mW | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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N Channel | 70V | 10A | 0.1ohm | TO-220 | Through Hole | 10V | 3V | 50W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4710PBF
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SC11091 |
Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole INFINEON The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...
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N Channel | - | - | 0.014ohm | - | Through Hole | - | - | 200W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP12N10L
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SC11126 |
Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole ONSEMI The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...
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N Channel | - | - | 0.2ohm | - | Through Hole | - | - | 60W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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N Channel | - | - | 0.065ohm | - | Surface Mount | - | - | 500mW | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5305PBF
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SC08218 |
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole INFINEON The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | - | - | 0.06ohm | - | Through Hole | - | - | 110W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP22N50APBF
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SC11094 |
Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole VISHAY The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current
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N Channel | 500V | 22A | 0.23ohm | TO-247AC | Through Hole | 10V | 4V | 277W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002LT1G
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SC11038 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount ONSEMI The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...
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N Channel | 60V | 115mA | 7.5ohm | SOT-23 | Surface Mount | 10V | 2.5V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404PBF
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SC11147 |
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole INFINEON The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | - | - | 0.004ohm | - | Through Hole | - | - | 200W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170P
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SC06957 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole DIODES INC. The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...
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N Channel | 60V | 270mA | 5ohm | E-Line | Through Hole | 10V | 3V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS352AP
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SC11034 |
Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount ONSEMI The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...
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P Channel | - | - | 0.25ohm | - | Surface Mount | - | - | 500mW | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN338P
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SC11041 |
Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount ONSEMI The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...
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P Channel | - | - | 0.13ohm | - | Surface Mount | - | - | 500mW | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD9120PBF
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SC07026 |
Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole VISHAY The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which...
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P Channel | 100V | 1A | 0.6ohm | DIP | Through Hole | 10V | 4V | 1.3W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW12NK80Z.
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SC06406 |
Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerME...
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N Channel | 800V | 10.5A | 0.65ohm | TO-247 | Through Hole | 10V | 3.75V | 190W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||