Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN357N
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SC11040 |
Power MOSFET, N Channel, 30 V, 2.5 A, 0.053 ohm, SOT-23, Surface Mount ONSEMI The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage...
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N Channel | 30V | 2.5A | 0.053ohm | - | Surface Mount | 4.5V | 1.6V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDT3055L
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SC11043 |
Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount ONSEMI The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand hig...
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N Channel | 60V | 4A | 0.07ohm | - | Surface Mount | 10V | 1.6V | 3W | 4Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9640PBF
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SC08142 |
Power MOSFET, P Channel, 200 V, 11 A, 0.5 ohm, TO-220AB, Through Hole VISHAY The IRF9640PBF is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...
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P Channel | 200V | 11A | 0.5ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL510PBF
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SC11134 |
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole VISHAY Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dot rating • Repetitive avalanche rated • Logic-level gate drive • 175°C operat...
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N Channel | 100V | 5.6A | 0.54ohm | TO-220AB | Through Hole | 5V | 2V | 43W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP450APBF
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SC10645 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450APBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dy...
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N Channel | 500V | 14A | 0.4ohm | TO-247AC | Through Hole | 10V | 4V | 190W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP9NK50ZFP
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SC13028 |
Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP9NK50ZFP is a 500V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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1+ €1.1186 (€1.38) 10+ €0.6664 (€0.82) |
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N Channel | 500V | 7.2A | 0.72ohm | TO-220FP | Through Hole | 10V | 3.75V | 30W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3710PBF
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SC11104 |
Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole INFINEON The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...
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N Channel | 100V | 46A | 0.023ohm | TO-220AB | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84
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SC11030 |
Power MOSFET, P Channel, 50 V, 130 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The BSS84 is P channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS84 are suited for low voltage, low...
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P Channel | 50V | 130mA | 1.2ohm | SOT-23 | Surface Mount | 5V | 1.7V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDT2955
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SC11042 |
Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount ONSEMI The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications. • High density cell design for extremely lo...
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P Channel | 60V | 2.5A | 0.3ohm | - | Surface Mount | 10V | 2.6V | 3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLZ34NPBF
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SC11125 |
Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole INFINEON The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 27A | 0.035ohm | - | Through Hole | 10V | 2V | 56W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4206A
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SC06966 |
Power MOSFET, N Channel, 60 V, 600 mA, 1.5 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4206A is a 60V E-Line N-channel Enhancement Mode Vertical DMOS FET with 1Ω resistance and 700mW power dissipation.
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N Channel | 60V | 600mA | 1.5ohm | TO-226AA | Through Hole | 10V | 3V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF610PBF
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SC11106 |
Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 200V | 3.3A | 1.5ohm | TO-220AB | Through Hole | 10V | 4V | 36W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9530NPBF
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SC08220 |
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...
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P Channel | 100V | 13A | 0.2ohm | - | Through Hole | 10V | 4V | 79W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP50N06
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SC08222 |
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole ONSEMI The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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N Channel | 60V | 50A | 0.022ohm | TO-220AB | Through Hole | 10V | 4V | 131W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024NPBF
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SC11062 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole INFINEON The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | 55V | 11A | 0.175ohm | - | Through Hole | 10V | 4V | 38W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530NPBF
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SC08215 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...
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N Channel | 100V | 17A | 0.09ohm | - | Through Hole | 10V | 4V | 63W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NK50Z.
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SC06409 |
Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 17A • Drain Source On State Resistance : 0.23ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 190W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 17A | 0.23ohm | TO-247 | Through Hole | 10V | 3.75V | 190W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106A
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SC06962 |
Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole DIODES INC. The ZVN2106A is a N-channel enhancement mode MOSFET with 8A pulsed drain current. • ±20V Gate Source Voltage
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N Channel | 60V | 450mA | 2ohm | TO-226AA | Through Hole | 10V | 2.4V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250PBF
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SC11176 |
Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole VISHAY The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 30A | 0.085ohm | TO-247AC | Through Hole | 10V | 4V | 180W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4368PBF
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SC11167 |
Power MOSFET, N Channel, 75 V, 350 A, 0.00146 ohm, TO-247AC, Through Hole INFINEON The IRFP4368PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 350A | 0.00146ohm | - | Through Hole | 20V | 4V | 520W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250NPBF
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SC11079 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 30A | 0.075ohm | - | Through Hole | 10V | 4V | 214W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA24N60.
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SC06316 |
Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source On State Resistance : 0.24ohm • Transistor Mounting : Through Hole • Power Dissipation : 310W • No. of Pins : 3Pins
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N Channel | - | - | 0.24ohm | - | Through Hole | - | - | 310W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306A
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SC06975 |
Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole DIODES INC. The ZVP3306A is a P-channel enhancement mode Vertical DMOS FET. • AEC-Q101 Qualified
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P Channel | 60V | 160mA | 14ohm | E-Line | Through Hole | 10V | 3.5V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9Z24NPBF
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SC11122 |
Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole INFINEON The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
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P Channel | 55V | 12A | 0.175ohm | - | Through Hole | 10V | 4V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDT452AP
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SC11045 |
Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount ONSEMI The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performanc...
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P Channel | 30V | 5A | 0.065ohm | - | Surface Mount | 10V | 1.6V | 3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||