Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN359AN
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SC06985 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SOT-23, Surface Mount ONSEMI The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and batter...
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N Channel | 30V | 2.7A | 0.046ohm | - | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMP4A16K
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SC11204 |
Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP4A16K is a new generation Trench P-channel enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes it ideal for high efficiency and low voltage applications....
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P Channel | 40V | 9.9A | 0.06ohm | TO-252 (DPAK) | Surface Mount | 10V | 1V | 9.5W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS352AP
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SC11034 |
Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount ONSEMI The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...
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P Channel | 30V | 900mA | 0.3ohm | - | Surface Mount | 10V | 1.7V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN338P
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SC11041 |
Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount ONSEMI The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...
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P Channel | 20V | 1.6A | 0.115ohm | - | Surface Mount | 4.5V | 800mV | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP10NK60Z
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SC08225 |
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole STMICROELECTRONICS The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...
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N Channel | 600V | 10A | 0.75ohm | TO-220 | Through Hole | 10V | 3.75V | 115W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106G
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SC11051 |
Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount DIODES INC. The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...
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N Channel | 60V | 700mA | 2ohm | SOT-223 | Surface Mount | 10V | 2.4V | 2W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740APBF
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SC11085 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...
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N Channel | 400V | 10A | 0.55ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN304P
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SC07004 |
Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount ONSEMI The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...
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P Channel | 20V | 2.4A | 0.052ohm | - | Surface Mount | 4.5V | 800mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4668PBF
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SC11169 |
Power MOSFET, N Channel, 200 V, 130 A, 0.0097 ohm, TO-247AC, Through Hole INFINEON The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...
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N Channel | 200V | 130A | 0.0097ohm | - | Through Hole | 30V | 5V | 520W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002AK
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SC13942 |
Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount NXP The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV
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N Channel | 60V | 190mA | 3ohm | TO-236AB | Surface Mount | 10V | 1.6V | 265mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D27Z
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SC15773 |
Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92 ONSEMI The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | TO-92 | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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P Channel | 30V | 8.8A | 0.02ohm | SOIC | Surface Mount | 10V | 2.1V | 2.5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML9301TRPBF
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SC16719 |
Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount INFINEON The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...
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P Channel | 30V | 3.6A | 0.051ohm | SOT-23 | Surface Mount | 10V | 1.3V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH111BKR
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SC16763 |
Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD NEXPERIA The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...
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N Channel | 55V | 210mA | 2.3ohm | SOT-23 | Surface Mount | 4.5V | 1V | 302mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIR422DP-T1-GE3
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SC16864 |
Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount VISHAY The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...
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N Channel | 40V | 40A | 0.0054ohm | PowerPAK SO | Surface Mount | 10V | 1.2V | 5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN3404L-7
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SC16731 |
Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount DIODES INC. The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...
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N Channel | 30V | 4.2A | 0.028ohm | SOT-23 | Surface Mount | 10V | 1.5V | 1.4W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002-7-F
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SC15986 |
Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD DIODES INC. The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...
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N Channel | 60V | 210mA | 5ohm | SOT-23 | Surface Mount | 10V | 2.5V | 370mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS131H6327XTSA1
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SC16714 |
Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount INFINEON The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device
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N Channel | 240V | 110mA | 7.7ohm | SOT-23 | Surface Mount | 10V | 1.4V | 360mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP450PBF
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SC17006 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 500V | 14A | 0.4ohm | TO-247AC | Through Hole | 10V | 4V | 190W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS250P
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SC16888 |
P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line DIODES INC. BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...
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P Channel | 45V | 230mA | 14ohm | E-Line | Through Hole | 10V | 3.5V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460APBF
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SC16962 |
N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC VISHAY • Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)
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N Channel | 500V | 20A | 0.27ohm | TO-247AC | Through Hole | 10V | 4V | 280W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB7430PBF
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SC16945 |
Power MOSFET, N Channel, 40 V, 195 A, 0.0013 ohm, TO-220AB, Through Hole INFINEON Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...
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N Channel | 40V | 195A | 0.0013ohm | TO-220AB | Through Hole | 10V | 2.2V | 375W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ459EP-T1_GE3
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SC16852 |
Power MOSFET, P Channel, 60 V, 52 A, 0.018 ohm, PowerPAK SO, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 52A | 0.018ohm | PowerPAK SO | Surface Mount | 10V | 2V | 83W | 8Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 0.05ohm | SOT-23 | Surface Mount | 10V | 2.1V | 1.38W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD35P6LLF6
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SC16818 |
SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK) STMICROELECTRONICS This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
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P Channel | 60V | 35A | 0.025ohm | TO-252 (DPAK) | Surface Mount | 10V | 2.5V | 70W | 3Pins | 175°C | STripFET F6 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||