Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDT452AP
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SC11045 |
Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount ONSEMI The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performanc...
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P Channel | 30V | 5A | 0.065ohm | - | Surface Mount | 10V | 1.6V | 3W | 4Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP40NF10
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SC11103 |
Power MOSFET, N Channel, 100 V, 50 A, 0.025 ohm, TO-220, Through Hole STMICROELECTRONICS The STP40NF10 is a N-channel low gate charge STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alig...
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N Channel | 100V | 50A | 0.025ohm | TO-220 | Through Hole | 10V | 3V | 150W | 3Pins | 175°C | STP | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN359AN
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SC06985 |
Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SOT-23, Surface Mount ONSEMI The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and batter...
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N Channel | 30V | 2.7A | 0.046ohm | - | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMP4A16K
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SC11204 |
Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP4A16K is a new generation Trench P-channel enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes it ideal for high efficiency and low voltage applications....
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P Channel | 40V | 9.9A | 0.06ohm | TO-252 (DPAK) | Surface Mount | 10V | 1V | 9.5W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV213SN
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SC06993 |
Power MOSFET, N Channel, 100 V, 1.9 A, 0.25 ohm, SOT-23, Surface Mount NXP The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications. • Low conduction losses due to low ON-state resistance • -55 to 150°C Ju...
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N Channel | 100V | 1.9A | 0.25ohm | SOT-23 | Surface Mount | 10V | 3V | 2W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFI540NPBF
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SC11143 |
Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole INFINEON The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • Isolated package • 2.5kVrms High voltage isolation • 4.8mm Sink to lead cre...
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N Channel | 100V | 20A | 0.052ohm | - | Through Hole | 10V | 4V | 42W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84
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SC11028 |
MOSFET, P, SOT23 NXP • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 130mA • Transistor Case Style : SOT-23 • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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- | 50V | 130mA | - | SOT-23 | - | 10V | 2V | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4424A
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SC06970 |
Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.
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N Channel | 240V | 260mA | 6ohm | TO-226AA | Through Hole | 10V | 1.3V | 570mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP4424A
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SC06977 |
Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole DIODES INC. The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold
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P Channel | 240V | 200mA | 15ohm | TO-226AA | Through Hole | 10V | 1.4V | 750mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002AK
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SC13942 |
Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount NXP The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV
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N Channel | 60V | 190mA | 3ohm | TO-236AB | Surface Mount | 10V | 1.6V | 265mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002NXAKR
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SC15954 |
Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 190mA • Drain Source On State Resistance : 3ohm • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 265mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 190mA | 3ohm | TO-236AB | Surface Mount | 10V | 1.6V | 265mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2318AES-T1_GE3
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SC16702 |
SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A VISHAY • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100% Rg and UIS Tested
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N Channel | 40V | 8A | 0.125ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN3NF06L
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SC16819 |
Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount STMICROELECTRONICS • 60V, 4A N-channel STripFET™ II power MOSFET in a 4 pin SOT-223 package • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Suitable for switching applications • Specifically designed to minimize input capacitance and gate char...
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N Channel | 60V | 4A | 0.07ohm | SOT-223 | Surface Mount | 10V | 2.8V | 3.3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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P Channel | 30V | 8.8A | 0.016ohm | SOIC | Surface Mount | 10V | 2.1V | 2.5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D27Z
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SC15773 |
Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92 ONSEMI The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | TO-92 | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML9301TRPBF
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SC16719 |
Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount INFINEON The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...
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P Channel | 30V | 3.6A | 0.051ohm | SOT-23 | Surface Mount | 10V | 1.3V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH111BKR
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SC16763 |
Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD NEXPERIA The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...
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N Channel | 55V | 210mA | 2.3ohm | SOT-23 | Surface Mount | 4.5V | 1V | 302mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN3404L-7
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SC16731 |
Power MOSFET, N Channel, 30 V, 4.2 A, 0.024 ohm, SOT-23, Surface Mount DIODES INC. The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...
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N Channel | 30V | 4.2A | 0.024ohm | SOT-23 | Surface Mount | 10V | 1.5V | 1.4W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIR422DP-T1-GE3
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SC16864 |
Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount VISHAY The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...
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N Channel | 40V | 40A | 0.0054ohm | PowerPAK SO | Surface Mount | 10V | 1.2V | 5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ459EP-T1_GE3
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SC16852 |
Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 52A | 0.0155ohm | PowerPAK SO | Surface Mount | 10V | 2V | 83W | 8Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD35P6LLF6
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SC16818 |
SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK) STMICROELECTRONICS This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
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P Channel | 60V | 35A | 0.025ohm | TO-252 (DPAK) | Surface Mount | 10V | 2.5V | 70W | 3Pins | 175°C | STripFET F6 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 0.035ohm | SOT-23 | Surface Mount | 10V | 2.1V | 1.38W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML0060TRPBF
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SC16754 |
Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount INFINEON The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 60V | 2.7A | 0.078ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN327N
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SC16796 |
Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount ONSEMI The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge
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N Channel | 20V | 2A | 0.07ohm | SuperSOT | Surface Mount | 4.5V | 700mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT457N
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SC16734 |
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount ONSEMI The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...
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N Channel | 30V | 5A | 0.06ohm | SOT-223 | Surface Mount | 10V | 3V | 3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||