Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K-7
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SC15985 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD DIODES INC. The 2N7002K-7 is an N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It features molded green plasti...
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N Channel | 60V | 300mA | 2ohm | SOT-23 | Surface Mount | 10V | 1.6V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM110P04-05-E3
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SC16869 |
Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.
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P Channel | 40V | 110A | 0.0041ohm | TO-263 (D2PAK) | Surface Mount | 10V | 3V | 375W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138LT3G
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SC15999 |
Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD ONSEMI The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space. • ±20VDC Continuous gate-to-source voltage • 556°C/W Junction-to-ambient thermal resistance
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N Channel | 50V | 200mA | 5.6ohm | SOT-23 | Surface Mount | 2.75V | 500mV | 225mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMN6A07FTA
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SC16749 |
Power MOSFET, N Channel, 60 V, 1 A, 0.4 ohm, SOT-23, Surface Mount DIODES INC. The ZXMN6A07FTA is a N-channel Enhancement Mode MOSFET with matte tin-plated terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. • Low...
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N Channel | 60V | 1A | 0.4ohm | SOT-23 | Surface Mount | 10V | 3V | 806mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS9435A
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SC16915 |
Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount ONSEMI The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...
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P Channel | 30V | 5.3A | 0.042ohm | SOIC | Surface Mount | 10V | 1.7V | 2.5W | 8Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84W-7-F
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SC16773 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount DIODES INC. The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain supe...
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P Channel | 50V | 130mA | 10ohm | SOT-323 | Surface Mount | 5V | 1.6V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4447ADY-T1-GE3
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SC16775 |
Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount VISHAY • 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs
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P Channel | 40V | 7.2A | 0.036ohm | SOIC | Surface Mount | 10V | 1.2V | 4.2W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TN0702N3-G
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SC17007 |
N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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N Channel | 20V | 530mA | 1ohm | TO-92 | Through Hole | 5V | 1V | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW45NM50
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SC15829 |
Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247, STMICROELECTRONICS The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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N Channel | 550V | 45A | 0.1ohm | TO-247 | Through Hole | 10V | 4V | 417W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML5103TRPBF
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SC16784 |
Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount INFINEON The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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P Channel | 30V | 600mA | 0.6ohm | µSOIC | Surface Mount | 10V | 1V | 540mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS332P
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SC16872 |
Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount ONSEMI The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...
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P Channel | 20V | 1A | 0.3ohm | SuperSOT | Surface Mount | 4.5V | 600mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTF2955T1G
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SC16880 |
SMD P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223 ONSEMI NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management. • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A) • Gate-to-source voltage is ±20V (TJ = 25...
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P Channel | 60V | 2.6A | 0.17ohm | SOT-223 | Surface Mount | 20V | 4V | 1W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN10LF
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SC16910 |
SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 150mA • Drain Source On State Resistance : 5ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 330mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 150mA | 5ohm | SOT-23 | Surface Mount | 10V | 2.5V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP4N150
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SC15827 |
Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220 STMICROELECTRONICS • 1500V, 4A N-channel PowerMESH™ power MOSFET in 3 pin TO-220 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Strengthened layout with edge termination • Lowest RDS(on) per area, unrivalled gate charge, s...
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N Channel | 1.5kV | 4A | 5ohm | TO-220 | Through Hole | 30V | 4V | 160W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN340P
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SC16814 |
Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SOT-23, Surface Mount ONSEMI The FDN340P is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at p...
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P Channel | 20V | 2A | 0.06ohm | SOT-23 | Surface Mount | 4.5V | 800mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740PBF
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SC16909 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 400V | 10A | 0.55ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1010EPBF
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SC17255 |
Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB INFINEON The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...
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N Channel | 60V | 81A | 0.012ohm | TO-220AB | Through Hole | 10V | 4V | 170W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW15NK90Z
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SC16941 |
Power MOSFET, N Channel, 900 V, 9.5 A, 0.4 ohm, TO-247, Through Hole STMICROELECTRONICS The STW15NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is...
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N Channel | 900V | 9.5A | 0.4ohm | TO-247 | Through Hole | 10V | 3.75V | 350W | 3Pins | 150°C | SuperMESH Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH205G2R
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SC16811 |
Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, TO-236AB, Surface Mount NEXPERIA The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...
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P Channel | 20V | 2A | 0.12ohm | TO-236AB | Surface Mount | 4.5V | 700mV | 480mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5210PBF
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SC15831 |
Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB INFINEON The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. • Advanced Process Technology • New Ultra Low On-Resistance • Fast Switching • Dyn...
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P Channel | 100V | 40A | 0.06ohm | TO-220AB | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DN2540N3-G
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SC16921 |
Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole MICROCHIP The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar t...
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N Channel | 400V | 120mA | 17ohm | TO-92 | Through Hole | 0V | - | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2333DDS-T1-GE3
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SC16861 |
Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount VISHAY The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 12V | 6A | 0.023ohm | SOT-23 | Surface Mount | 4.5V | 400mV | 1.7W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR2101PT1G
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SC16911 |
Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount ONSEMI The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...
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P Channel | 8V | 3.7A | 0.052ohm | SOT-23 | Surface Mount | 4.5V | 1V | 960mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1012T-7
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SC16742 |
Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD DIODES INC. DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...
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N Channel | 20V | 630mA | 0.3ohm | SOT-523 | Surface Mount | 4.5V | 1V | 280mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2060TRPBF
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SC16789 |
Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount INFINEON The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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N Channel | 60V | 1.2A | 0.356ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||