Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR5103NT1G
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SC15962 |
Power MOSFET, N Channel, 60V, 260mA, 1 Ohm, SOT-23, SMD ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 260mA • Drain Source On State Resistance : 1ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.6V • Power Dissipation : 300mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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1+ €0.1309 (€0.16) 10+ €0.0714 (€0.09) 100+ €0.0357 (€0.04) |
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N Channel | 60V | 260mA | 1ohm | SOT-23 | Surface Mount | 10V | 2.6V | 300mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD3055L104T4G
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SC16885 |
Power MOSFET, N Channel, 60 V, 12 A, 0.089 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD3055L104T4G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS (ON) • Lower VDS (ON) • Lower and tighter VSD • Lower diode r...
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1+ €0.3689 (€0.45) 10+ €0.3451 (€0.42) 100+ €0.2975 (€0.37) |
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N Channel | 60V | 12A | 0.089ohm | TO-252 (DPAK) | Surface Mount | 5V | 1.6V | 48W | 4Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7850DP-T1-E3
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SC16843 |
Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount VISHAY The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...
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1+ €1.428 (€1.76) 10+ €0.8449 (€1.04) 100+ €0.6664 (€0.82) |
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N Channel | 60V | 10.3A | 0.022ohm | PowerPAK SO | Surface Mount | 10V | 3V | 1.8W | 8Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS126H6327XTSA2
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SC16946 |
Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount INFINEON The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...
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1+ €0.2737 (€0.34) 10+ €0.1785 (€0.22) 100+ €0.1428 (€0.18) |
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N Channel | 600V | 21mA | 280ohm | SOT-23 | Surface Mount | 10V | 2V | 500mW | 3Pins | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBG30PBF
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SC16974 |
Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole VISHAY The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dr...
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N Channel | 1kV | 3.1A | 5ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18504Q5A
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SC16683 |
SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A, TEXAS INSTRUMENTS The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...
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N Channel | 40V | 50A | 0.0053ohm | VSON | Surface Mount | 10V | 1.9V | 77W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2369DS-T1-GE3
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SC16757 |
Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount VISHAY The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology. • 100% Rg Tested • Halogen-free
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P Channel | 30V | 7.6A | 0.024ohm | SOT-23 | Surface Mount | 10V | - | 2.5W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BK,215
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SC15984 |
Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD NEXPERIA The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...
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N Channel | 60V | 350mA | 1ohm | SOT-23 | Surface Mount | 10V | 1.6V | 440mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75344G3
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SC16989 |
Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole ONSEMI The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...
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N Channel | 55V | 75A | 0.0065ohm | TO-247 | Through Hole | 10V | 4V | 285W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5630
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SC16780 |
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount ONSEMI The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...
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N Channel | 60V | 1.7A | 0.1ohm | SuperSOT | Surface Mount | 10V | 2.4V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP20N60C3XKSA1
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SC21344 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole INFINEON The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 0.19ohm | TO-220 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP17P10
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SC08207 |
Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole ONSEMI The FQP17P10 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high av...
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1+ €0.8449 (€1.04) 25+ €0.6545 (€0.81) |
P Channel | - | - | 0.19ohm | - | Through Hole | - | - | 100W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP33N10
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SC08210 |
Power MOSFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-220, Through Hole ONSEMI The FQP33N10 is a 100V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...
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1+ €1.1781 (€1.45) 25+ €0.9044 (€1.11) |
N Channel | - | - | 0.052ohm | - | Through Hole | - | - | 127W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||