Single MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT86256
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SC21477 |
Power MOSFET, N Channel, 150 V, 3 A, 0.695 ohm, SOT-223, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 150V • Continuous Drain Current Id : 3A • Drain Source On State Resistance : 0.695ohm • Transistor Case Style : SOT-223 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.5V • Power Dissipation : 10W • No. of Pins : 4Pins • Operating Temperature Max : 150°C • Product Range : PowerTrench
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N Channel | 150V | 3A | 0.695ohm | SOT-223 | Surface Mount | 10V | 3.5V | 10W | 4Pins | 150°C | PowerTrench | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS816NWH6327XTSA1
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SC21340 |
Power MOSFET, N Channel, 20 V, 1.4 A, 0.107 ohm, SOT-323, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 1.4A | 0.107ohm | SOT-323 | Surface Mount | 2.5V | 550mV | 500mW | 3Pins | 150°C | OptiMOS 2 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NX3008PBKW,115
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SC21424 |
Power MOSFET, P Channel, 30 V, 200 mA, 2.8 ohm, SOT-323, Surface Mount NEXPERIA The NX3008PBKW is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for relay driver, high-speed line driver and high-side loadswitch. • Logic-level compatible • Very fast s...
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P Channel | 30V | 200mA | 2.8ohm | SOT-323 | Surface Mount | 4.5V | 900mV | 260mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3456DDV-T1-GE3
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SC21595 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.033 ohm, TSOP, Surface Mount VISHAY The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range
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N Channel | 30V | 6.3A | 0.033ohm | TSOP | Surface Mount | 10V | 1.2V | 1.7W | 6Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV30UN2R
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SC21452 |
Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount NEXPERIA The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...
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N Channel | 20V | 5.4A | 0.024ohm | SOT-23 | Surface Mount | 4.5V | 650mV | 490mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3099L-7
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SC21313 |
Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 3.8A • Drain Source On State Resistance : 0.065ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.1V • Power Dissipation : 1.08W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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P Channel | 30V | 3.8A | 0.065ohm | SOT-23 | Surface Mount | 10V | 2.1V | 1.08W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7113DN-T1-GE3
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SC21597 |
Power MOSFET, P Channel, 100 V, 13.2 A, 0.119 ohm, PowerPAK 1212, Surface Mount VISHAY • P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies
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P Channel | 100V | 13.2A | 0.119ohm | PowerPAK 1212 | Surface Mount | 4.5V | 1V | 52W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2120U-7
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SC21311 |
Power MOSFET, P Channel, 20 V, 3.8 A, 0.051 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : P Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 3.8A • Drain Source On State Resistance : 0.051ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 4.5V • Gate Source Threshold Voltage Max : 1V • Power Dissipation : 800mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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P Channel | 20V | 3.8A | 0.051ohm | SOT-23 | Surface Mount | 4.5V | 1V | 800mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002BKMYL
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SC21425 |
Power MOSFET, N Channel, 60 V, 350 mA, 2.2 ohm, SOT-883, Surface Mount NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 350mA • Drain Source On State Resistance : 2.2ohm • Transistor Case Style : SOT-883 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.6V • Power Dissipation : 350mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 350mA | 2.2ohm | SOT-883 | Surface Mount | 10V | 1.6V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP80P03P4L04AKSA2
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SC20575 |
Power Mosfet Transistor, P Channel, 30V, 80A, TO-220 INFINEON • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection
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P Channel | 30V | 80A | 0.0037ohm | TO-220 | Through Hole | 10V | 1.5V | 137W | 3Pins | 175°C | OptiMOS-P2 | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TSM2306CX RFG
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SC21549 |
Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. • ±20V Gate-source voltage • 3.5A Continuous source current • 75°C/W Junction-to-case thermal resistance • 130°C/...
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N Channel | 30V | 3.5A | 0.046ohm | SOT-23 | Surface Mount | 10V | 1V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002A-7
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SC21288 |
Power MOSFET, N Channel, 60 V, 180 mA, 3.5 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 180mA • Drain Source On State Resistance : 3.5ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 5V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 370mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 60V | 180mA | 3.5ohm | SOT-23 | Surface Mount | 5V | 2V | 370mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7145DP-T1-GE3
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SC21598 |
Power MOSFET, P Channel, 30 V, 60 A, 0.0021 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 60A • Drain Source On State Resistance : 0.0021ohm • Transistor Case Style : PowerPAK SO • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.3V • Power Dissipation : 104W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : TrenchFET
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P Channel | 30V | 60A | 0.0021ohm | PowerPAK SO | Surface Mount | 10V | 2.3V | 104W | 8Pins | 150°C | TrenchFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDPF55N06
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SC20049 |
Power MOSFET, N Channel, 60V, 55A, 0.018 ohm, TO-220F ONSEMI The FDPF55N06 is tailored ti reduce in-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factorfactor correction (PFC),...
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N Channel | 60V | 55A | 0.018ohm | TO-220F | Through Hole | 10V | 4V | 48W | 3Pins | 150°C | UniFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540NSTRLPBF
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SC21341 |
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...
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N Channel | 100V | 33A | 0.044ohm | TO-263 (D2PAK) | Surface Mount | 10V | 4V | 130W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0610
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SC21483 |
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...
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P Channel | 60V | 120mA | 10ohm | SOT-23 | Surface Mount | 10V | 1.7V | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138L
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SC21473 |
Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 2.78ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 5V • Gate Source Threshold Voltage Max : 1.25V • Power Dissipation : 350mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 50V | 200mA | 2.78ohm | SOT-23 | Surface Mount | 5V | 1.25V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002H6327XTSA2
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SC21335 |
Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount INFINEON The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free
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N Channel | 60V | 300mA | 1.6ohm | SOT-23 | Surface Mount | 10V | 2.1V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP4051LK3-13
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SC21314 |
Power MOSFET, P Channel, 40 V, 7.2 A, 0.041 ohm, TO-252 (DPAK), Surface Mount DIODES INC. • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 7.2A • Drain Source On State Resistance : 0.041ohm • Transistor Case Style : TO-252 (DPAK) • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 4.18W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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P Channel | 40V | 7.2A | 0.041ohm | TO-252 (DPAK) | Surface Mount | 10V | 3V | 4.18W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2389ES-T1_GE3
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SC21607 |
Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 3.3W • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101
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P Channel | 40V | 4.1A | 0.094ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN62D0U-7
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SC21310 |
Power MOSFET, N Channel, 60 V, 380 mA, 1.2 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 380mA • Drain Source On State Resistance : 1.2ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 4.5V • Gate Source Threshold Voltage Max : 1V • Power Dissipation : 380mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Qualification : AEC-Q101
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N Channel | 60V | 380mA | 1.2ohm | SOT-23 | Surface Mount | 4.5V | 1V | 380mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ1421EDH-T1_GE3
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SC21605 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.23 ohm, SC-70, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 1.6A • Drain Source On State Resistance : 0.23ohm • Transistor Case Style : SC-70 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 3.3W • No. of Pins : 6Pins • Operating Temperature Max : 175°C • Product Range : TrenchFET • Qualification : AEC-Q101
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P Channel | 60V | 1.6A | 0.23ohm | SC-70 | Surface Mount | 10V | 2V | 3.3W | 6Pins | 175°C | TrenchFET | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN10H220L-7
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SC21309 |
Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 1.4A • Drain Source On State Resistance : 0.22ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 1.3W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 100V | 1.4A | 0.22ohm | SOT-23 | Surface Mount | 10V | 2.5V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMN3A01F
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SC21333 |
Power MOSFET, N Channel, 30 V, 2 A, 0.12 ohm, SOT-23, Surface Mount DIODES INC. The ZXMN3A01F is a N-channel enhancement-mode new generation TRENCH MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage application...
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N Channel | 30V | 2A | 0.12ohm | SOT-23 | Surface Mount | 10V | 1V | 806mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQU17P06
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SC11064 |
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole ONSEMI The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...
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P Channel | 60V | 12A | 0.11ohm | TO-251AA | Through Hole | 10V | 4V | 79W | 3Pins | 150°C | - | - |