Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP30N06
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SC16931 |
Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole ONSEMI The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...
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N Channel | 60V | 30A | 0.031ohm | TO-220AB | Through Hole | 10V | 4V | 79W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPW20N60C3FKSA1
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SC16942 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole INFINEON The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...
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N Channel | 650V | 20.7A | 0.19ohm | TO-247 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138PW,115
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SC16000 |
Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD NEXPERIA The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 320mA | 0.9ohm | SOT-323 | Surface Mount | 10V | 1.2V | 830mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQA170N06.
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SC06320 |
Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source On State Resistance : 0.0056ohm • Transistor Mounting : Through Hole • Power Dissipation : 375W • No. of Pins : 3Pins
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N Channel | - | - | 0.0056ohm | - | Through Hole | - | - | 375W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4110PBF
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SC11168 |
Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole INFINEON The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | - | - | 0.0037ohm | - | Through Hole | - | - | 370W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK50Z.
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SC06019 |
Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 125W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 10A | 0.48ohm | TO-220 | Through Hole | 10V | 3.75V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP23N50LPBF
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SC11180 |
Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole VISHAY The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...
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N Channel | 500V | 23A | 0.235ohm | TO-247AC | Through Hole | 10V | 5V | 370W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP19N20
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SC08208 |
Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...
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N Channel | - | - | 0.12ohm | - | Through Hole | - | - | 140W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN0545A
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SC06961 |
Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole DIODES INC. The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.
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N Channel | 450V | 90mA | 50ohm | E-Line | Through Hole | 10V | 3V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NM50FD
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SC11175 |
Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole STMICROELECTRONICS The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...
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N Channel | 500V | 20A | 0.25ohm | TO-247 | Through Hole | 10V | 4V | 214W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9014PBF
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SC11069 |
Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole VISHAY The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling
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P Channel | 60V | 5.6A | 0.5ohm | TO-251AA | Through Hole | 10V | 4V | 30W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4310A
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SC06969 |
Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.
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N Channel | 100V | 900mA | 0.65ohm | TO-226AA | Through Hole | 10V | 3V | 850mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFD120PBF
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SC07021 |
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole VISHAY The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...
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N Channel | 100V | 1.3A | 0.27ohm | DIP | Through Hole | 10V | 4V | 1.3W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4568PBF
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SC11170 |
Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole INFINEON The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | - | - | 0.0048ohm | TO-247AC | Through Hole | - | - | 517W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP5800
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SC16966 |
Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole ONSEMI The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...
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N Channel | 60V | 80A | 0.0046ohm | TO-220 | Through Hole | 20V | 2.5V | 242mW | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP450PBF
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SC17006 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 500V | 14A | 0.4ohm | TO-247AC | Through Hole | 10V | 4V | 190W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19537Q3T
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SC16995 |
SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0121ohm • Transistor Case Style : VSON • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3V • Power Dissipation : 83W • No. of Pins : 8Pins • Operating Temperature Max : 150°C
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N Channel | 100V | 50A | 0.0121ohm | VSON | Surface Mount | 10V | 3V | 83W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS806NH6327XTSA1
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SC16851 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free
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N Channel | 20V | 2.3A | 0.041ohm | SOT-23 | Surface Mount | 2.5V | 550mV | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540PBF
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SC15756 |
Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB VISHAY The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 100V | 28A | 0.077ohm | TO-220AB | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61N02F
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SC16913 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...
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N Channel | 20V | 1.7A | 0.18ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A17E6TA
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SC16832 |
Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...
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P Channel | 60V | 3A | 0.125ohm | SOT-23 | Surface Mount | 10V | 3V | 1.1W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138LT1G
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SC15995 |
Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD ONSEMI BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portable and battery pow...
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N Channel | 50V | 200mA | 3.5ohm | SOT-23 | Surface Mount | 5V | 1.5V | 225mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBC40APBF
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SC16969 |
Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole VISHAY The IRFBC40APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications. • Low gate charge Qg results in simple drive requirement • Impro...
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N Channel | 600V | 6.2A | 1.2ohm | TO-220AB | Through Hole | 10V | 4V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB4132PBF
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SC17012 |
Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole INFINEON HEXFET® Power MOSFET in TO-220AB package optimized for UPS/inverter applications. • Very low RDS(on) at 4.5V VGS • Ultra-low gate impedance • Fully characterized avalanche voltage and current
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N Channel | 30V | 78A | 0.0025ohm | TO-220AB | Through Hole | 10V | 1.8V | 140W | 3Pins | 175°C | HEXFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-E3
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SC16887 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount VISHAY Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...
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P Channel | 20V | 3.1A | 0.11ohm | SOT-23 | Surface Mount | 2.5V | 400mV | 1.6W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||