Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP3N150
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SC16950 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, TO-220, Through Hole STMICROELECTRONICS The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on ...
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N Channel | 1.5kV | 2.5A | 6ohm | TO-220 | Through Hole | 10V | 4V | 140W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP10NK60ZFP
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SC17005 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...
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N Channel | 600V | 10A | 0.65ohm | TO-220FP | Through Hole | 10V | 3.75V | 35W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7000BU
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SC16840 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole ONSEMI The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applicatio...
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N Channel | 60V | 200mA | 5ohm | TO-226AA | Through Hole | 10V | 3.9V | 400mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS123LT1G
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SC16745 |
SMD N Channel Power MOSFET, 100V, 170mA, 6 Ohm, SOT 23 ONSEMI • AEC-Q101 Qualified • PPAP capable
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N Channel | 100V | 170mA | 6ohm | SOT-23 | Surface Mount | 10VDC | 2.6V | 225mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP250,115
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SC16760 |
Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount NEXPERIA The BSP250,115 is a -30V P-channel Enhancement Mode vertical D-MOS Transistor with high speed switching and low on resistance makes this device suitable for use in low loss motor, actuator drivers and power switching applications. • 150°C Junction temperat...
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P Channel | 30V | 1A | 0.25ohm | SOT-223 | Surface Mount | 10V | 2.8V | 5W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4101PT1G
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SC16827 |
Power MOSFET, P Channel, 20 V, 3.2 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications. • Leading -20V Tr...
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P Channel | 20V | 3.2A | 0.07ohm | SOT-23 | Surface Mount | 4.5V | 720mV | 730mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2305UX-13
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SC16744 |
Power MOSFET, P Channel, 20V, 4.2A, 0.04 Ohm, SOT-23, SMD DIODES INC. DMG2305UX-13 is a P-channel enhancement mode MOSFET in a 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications....
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P Channel | 20V | 4.2A | 0.04ohm | SOT-23 | Surface Mount | 4.5V | 900mV | 1.4W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ24NPBF
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SC16935 |
N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB INFINEON Single N-channel HEXFET® power MOSFET. • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Planar cell structure for wide SOA • Product qualification according to JEDEC standard • High-current rating • Increased ...
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N Channel | 55V | 17A | 0.07ohm | TO-220AB | Through Hole | 10V | 4V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4110PBF
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SC16958 |
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole INFINEON The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 180A | 0.0045ohm | TO-220AB | Through Hole | 10V | 4V | 370W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN3023L-7
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SC15970 |
Power MOSFET, N Channel, 30V, 6.2A, 0.025 Ohm, SOT-23, SMD DIODES INC. DMN3023L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical ...
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N Channel | 30V | 6.2A | 0.025ohm | SOT-23 | Surface Mount | 10V | 1.8V | 900mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STH3N150-2
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SC16870 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, H2PAK-2, Surface Mount STMICROELECTRONICS • 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin H2PAK-2 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Designed using company’s consolidated strip layout-based MESHOVERLAY™ process • Suitable fo...
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N Channel | 1.5kV | 2.5A | 6ohm | H2PAK-2 | Surface Mount | 10V | 4V | 140W | 3Pins | 150°C | PowerMESH | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61P02F
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SC16878 |
Power MOSFET, P Channel, 20 V, 900 mA, 0.6 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61P02F is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish terminals as per MIL-STD-202 standard. It utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed, ma...
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P Channel | 20V | 900mA | 0.6ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20BKR
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SC16765 |
Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD NEXPERIA The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...
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N Channel | 60V | 265mA | 2.1ohm | SOT-23 | Surface Mount | 10V | 1V | 310mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW4N150
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SC15828 |
Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247, STMICROELECTRONICS The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...
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N Channel | 1.5kV | 4A | 7ohm | TO-247 | Through Hole | 10V | 4V | 160W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-GE3
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SC16862 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.09 ohm, SOT-23, Surface Mount VISHAY The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 20V | 3.1A | 0.09ohm | SOT-23 | Surface Mount | 4.5V | 400mV | 1.6W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP6023LE-13
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SC15971 |
Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD DIODES INC. DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...
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P Channel | 60V | 18.2A | 0.028ohm | SOT-223 | Surface Mount | 10V | 3V | 17.3W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN352AP
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SC16755 |
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount ONSEMI The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...
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P Channel | 30V | 1.3A | 0.18ohm | SuperSOT | Surface Mount | 10V | 2V | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS6681Z
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SC19252 |
P Channel Power MOSFET, 30V, 20A, 0.0038 Ohm, SOIC, SMD ONSEMI The FDS6681Z is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...
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P Channel | 30V | 20A | 0.0038ohm | SOIC | Surface Mount | 10V | 1.8V | 2.5W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP55NF06L
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SC19553 |
Power MOSFET, N Channel, 60V, 55A, 0.014 Ohm, TO-220 STMICROELECTRONICS The STP55NF06L is a N-channel Power MOSFET, latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and l...
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N Channel | 60V | 55A | 0.014ohm | TO-220 | Through Hole | 10V | 1.7V | 95W | 3Pins | 175°C | STP | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2803TRPBF
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SC19133 |
SMD Power MOSFET, N Channel, 30V, 850mA, 0.3 Ohm, SOT-23 INFINEON The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
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N Channel | 30V | 850mA | 0.3ohm | SOT-23 | Surface Mount | 10V | 1V | 400mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A17GTA
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SC19122 |
Power MOSFET, P Channel, 60 V, 3 A, 0.096 ohm, SOT-223, Surface Mount DIODES INC. The ZXMP6A17GTA is a P-channel Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, maki...
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P Channel | 60V | 3A | 0.096ohm | SOT-223 | Surface Mount | 10V | 1V | 2W | 4Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD90P04P405ATMA2
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SC20574 |
Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD INFINEON IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...
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P Channel | 40V | 90A | 0.0047ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 125W | 3Pins | 175°C | OptiMOS P2 Series | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002E-7-F
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SC21289 |
Power MOSFET, N Channel, 60 V, 250 mA, 1.6 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 1.6ohm • Transistor Case Style : SOT-23 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.5V • Power Dissipation : 370mW • No. of Pins : 3Pins • Operating Temperature Max : 150°C • Product Range : 2N7002E • Qualification : AEC-Q101
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N Channel | 60V | 250mA | 1.6ohm | SOT-23 | Surface Mount | 10V | 2.5V | 370mW | 3Pins | 150°C | 2N7002E | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL2705TRPBF
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SC21342 |
Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount INFINEON The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 3.8A | 0.04ohm | SOT-223 | Surface Mount | 10V | 2V | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2246TRPBF
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SC21343 |
Power MOSFET, P Channel, 20 V, 2.6 A, 0.09 ohm, SOT-23, Surface Mount INFINEON The IRLML2246TRPBF is a P-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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5
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P Channel | 20V | 2.6A | 0.09ohm | SOT-23 | Surface Mount | 4.5V | 1.1V | 1.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||