Single MOSFET Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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IRLML6401TRPBF
IRLML6401TRPBF - Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount

SC16733

Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...

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P Channel 12V 4.3A 0.05ohm SOT-23 Surface Mount 4.5V 550mV 1.3W 3Pins 150°C - -
NTD2955T4G
NTD2955T4G - Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount

SC16860

Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...

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P Channel 60V 12A 0.155ohm TO-252 (DPAK) Surface Mount 10V 2.8V 55W 4Pins 175°C - -
STP4NK60ZFP
STP4NK60ZFP - Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

SC16986

Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 600V 4A 2ohm TO-220FP Through Hole 10V 3.75V 25W 3Pins 150°C - -
IRFR9120NTRPBF
IRFR9120NTRPBF - Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount

SC16875

Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount

INFINEON

The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...

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P Channel 100V 6.6A 0.48ohm TO-252 (DPAK) Surface Mount 10V 4V 40W 3Pins 150°C - -
STP11NM60FD
STP11NM60FD - N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

SC16952

N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

STMICROELECTRONICS

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...

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N Channel 600V 11A 0.4ohm TO-220AB Through Hole 10V 4V 160W 3Pins 150°C FDmesh -
IRFBG20PBF
IRFBG20PBF - Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

SC16930

Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

VISHAY

The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...

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N Channel 1kV 1.3A 11.5ohm TO-220AB Through Hole 10V 4V 50W 3Pins 150°C - -
IRLB3034PBF
IRLB3034PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole

SC16937

Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole

INFINEON

The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...

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N Channel 40V 195A 0.0014ohm TO-220AB Through Hole 10V 2.5V 375W 3Pins 175°C - -
IPW60R017C7XKSA1
IPW60R017C7XKSA1 - Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

SC17026

Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

INFINEON

600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...

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N Channel 600V 109A 0.015ohm TO-247 Through Hole 10V 3.5V 446W 3Pins 150°C CoolMOS C7 -
FQPF27P06
FQPF27P06 - Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole

SC16932

Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole

ONSEMI

The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...

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P Channel 60V 17A 0.055ohm TO-220F Through Hole 10V 2V 47W 3Pins 175°C - -
IRFP4468PBF
IRFP4468PBF - Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

SC15830

Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

INFINEON

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 290A 0.002ohm TO-247AC Through Hole 20V 4V 520W 3Pins 175°C - -
IPB072N15N3GATMA1
IPB072N15N3GATMA1 - Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

SC16960

Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...

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N Channel 150V 100A 0.0058ohm TO-263 (D2PAK) Surface Mount 10V 3V 300W 3Pins 175°C - -
IRF7416TRPBF
IRF7416TRPBF - Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD

SC15957

Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD

INFINEON

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.02ohm • Transistor Case Style : SOIC • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2.04V • Power Dissipation : 2.5W • No. of Pins : 8Pins • Operating Temperature Max : 150°C • Product Range : HexFET

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P Channel 30V 10A 0.02ohm SOIC Surface Mount 10V 2.04V 2.5W 8Pins 150°C HexFET -
BS107P
BS107P - N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

SC16884

N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

DIODES INC.

• Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0

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N Channel 200V 120mA 30ohm E-Line Through Hole 5V 3V 500mW 3Pins 150°C - -
SI2393DS-T1-GE3
SI2393DS-T1-GE3 - SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23

SC16883

SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23

VISHAY

• TrenchFET® Gen IV P channel power MOSFET • 100% Rg and UIS tested

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P Channel 30V 7.5A 0.0189ohm SOT-23 Surface Mount 10V 2.2V 2.5W 3Pins 150°C TrenchFET Gen IV -
TP0606N3-G
TP0606N3-G - P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92

SC16919

P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel 60V 320mA 3ohm TO-92 Through Hole 10V 2.4V 1W 3Pins 150°C - -
SI2312CDS-T1-GE3
SI2312CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount

SC16735

Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount

VISHAY

The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...

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N Channel 20V 6A 0.0265ohm SOT-23 Surface Mount 4.5V 450mV 1.25W 3Pins 150°C - -
BSS138NH6327XTSA2
BSS138NH6327XTSA2 - Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

SC15994

Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

INFINEON

• 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101

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N Channel 60V 230mA 2.2ohm SOT-23 Surface Mount 10V 1V 360mW 3Pins 150°C - AEC-Q101
BSS806NEH6327XTSA1
BSS806NEH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

SC16876

Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

INFINEON

• N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101

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N Channel 20V 2.3A 0.041ohm SOT-23 Surface Mount 2.5V 550mV 500mW 3Pins 150°C - -
NTD25P03LT4G
NTD25P03LT4G - Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount

SC16886

Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...

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P Channel 30V 25A 0.056ohm TO-252 (DPAK) Surface Mount 5V 1.6V 75W 3Pins 150°C - -
IRFB4227PBF
IRFB4227PBF - Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole

SC17001

Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...

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N Channel 200V 65A 0.0197ohm TO-220AB Through Hole 10V 5V 330W 3Pins 175°C - -
SIHG20N50C-E3
SIHG20N50C-E3 - Power MOSFET, N Channel, 500V, 20A, 0.225 ohm, TO-247

SC15833

Power MOSFET, N Channel, 500V, 20A, 0.225 ohm, TO-247

VISHAY

The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability. • Halogen-free according to IEC 61249-2-21 definition • Low figure of merit Ron X Qg • 100% Avalanche rated • dV/dt Ruggedness • Improved Trr/Q...

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N Channel 500V 20A 0.225ohm TO-247 Through Hole 10V 5V 292W 3Pins 150°C - -
PMV250EPEAR
PMV250EPEAR - Power MOSFET, P Channel, 40 V, 1.5 A, 0.18 ohm, SOT-23, Surface Mount

SC16738

Power MOSFET, P Channel, 40 V, 1.5 A, 0.18 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV250EPEA is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for high-speed line driver and high-side load switch. • Logic-level compatible • Very fast switching • AE...

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P Channel 40V 1.5A 0.18ohm SOT-23 Surface Mount 10V 1.7V 480mW 3Pins 150°C - -
IRLR8726TRPBF
IRLR8726TRPBF - SMD N Channel Power MOSFET, 30V, 86A, 0.004 Ohm, TO-252AA

SC17015

SMD N Channel Power MOSFET, 30V, 86A, 0.004 Ohm, TO-252AA

INFINEON

• Suitable for high frequency synchronous buck converters for computer processor power • Suitable for high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use • Very Low RDS at 4.5V GS • Ultra low gate impedan...

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N Channel 30V 86A 0.004ohm TO-252AA Surface Mount 10V 1.8V 75W 3Pins 175°C HEXFET -
BSS138BK,215
BSS138BK,215 - Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD

SC15993

Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The BSS138BK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 360mA 1ohm SOT-23 Surface Mount 10V 1.1V 350mW 3Pins 150°C - -
SI2323CDS-T1-GE3
SI2323CDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 6 A, 0.032 ohm, SOT-23, Surface Mount

SC16846

Power MOSFET, P Channel, 20 V, 6 A, 0.032 ohm, SOT-23, Surface Mount

VISHAY

The SI2323CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, PA switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 20V 6A 0.032ohm SOT-23 Surface Mount 4.5V 400mV 2.5W 3Pins 150°C - -