Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF820PBF
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SC11107 |
Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRF820PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 500V | 2.5A | 3ohm | TO-220AB | Through Hole | 10V | 4V | 40W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBF170
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SC06989 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170 is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switch...
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N Channel | - | - | 5ohm | - | Surface Mount | - | - | 300mW | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP70N06
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SC08223 |
Power MOSFET, N Channel, 60 V, 70 A, 0.014 ohm, TO-220AB, Through Hole ONSEMI The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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N Channel | - | - | 0.014ohm | - | Through Hole | - | - | 150W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2804PBF
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SC08252 |
Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole INFINEON The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...
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N Channel | - | - | 0.0023ohm | - | Through Hole | - | - | 330W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP17P06
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SC08206 |
Power MOSFET, P Channel, 60 V, 17 A, 0.12 ohm, TO-220, Through Hole ONSEMI The FQP17P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performan...
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P Channel | - | - | 0.12ohm | - | Through Hole | - | - | 79W | 3Pins | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4106F
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SC07002 |
Power MOSFET, N Channel, 60 V, 200 mA, 2.5 ohm, SOT-23, Surface Mount DIODES INC. The ZVN4106F is a 60V N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals solderable as per MIL-STD-202 standard, method 208. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammability rating
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N Channel | 60V | 200mA | 2.5ohm | SOT-23 | Surface Mount | 10V | 3V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW14NK50Z.
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SC06408 |
Power MOSFET, N Channel, 500 V, 14 A, 0.34 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 14A • Drain Source On State Resistance : 0.34ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 150W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 14A | 0.34ohm | TO-247 | Through Hole | 10V | 3.75V | 150W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP12NM50
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SC11151 |
Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole STMICROELECTRONICS The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...
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N Channel | 550V | 12A | 0.35ohm | TO-220 | Through Hole | 10V | 4V | 160W | 3Pins | 150°C | STP | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD4243
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SC11198 |
Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount ONSEMI The FDD4243 is a P-channel MOSFET produced using PowerTrench® technology to deliver low RDS (ON) and optimized Bvdss capability to offer superior performance benefit in the applications. • High performance Trench technology for extremely low RDS (ON)
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P Channel | - | - | 0.036ohm | - | Surface Mount | - | - | 42W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP064NPBF
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SC11166 |
Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through Hole INFINEON The IRFP064NPBF is utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the ...
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N Channel | - | - | 0.008ohm | - | Through Hole | - | - | 150W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520NPBF
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SC08219 |
Power MOSFET, P Channel, 100 V, 6.8 A, 0.48 ohm, TO-220AB, Through Hole INFINEON The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | - | - | 0.48ohm | TO-220AB | Through Hole | - | - | 48W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP16NF06L..
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SC11129 |
Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole STMICROELECTRONICS The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...
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N Channel | 60V | 16A | 0.07ohm | TO-220 | Through Hole | 10V | 1V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK80Z.
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SC06405 |
Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 160W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 800V | 9A | 0.78ohm | TO-247 | Through Hole | 10V | 3.75V | 160W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002
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SC11027 |
Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount ONSEMI The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...
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N Channel | - | - | 1.2ohm | - | Surface Mount | - | - | 200mW | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP4321PBF
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SC11179 |
Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole INFINEON The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...
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N Channel | - | - | 0.012ohm | TO-247AC | Through Hole | - | - | 310mW | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4306A
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SC06968 |
Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4306A is a 60V E-Line N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals. The MOSFET is ideal for DC/DC convertors and solenoids/relay drivers for automotive. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0...
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N Channel | 60V | 1.1A | 0.45ohm | TO-226AA | Through Hole | 10V | 3V | 850mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 20A | 0.18ohm | TO-247AC | Through Hole | 10V | 4V | 150W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP27P06
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SC08209 |
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole ONSEMI The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche ene...
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P Channel | - | - | 0.07ohm | - | Through Hole | - | - | 120W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm | TO-226AA | Through Hole | 10V | 2.4V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP60NF06L
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SC11131 |
Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...
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N Channel | 60V | 60A | 0.014ohm | TO-220 | Through Hole | 10V | 1V | 110W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW10NK60Z
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SC06449 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-247, Through Hole STMICROELECTRONICS The STW10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip based PowerME...
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N Channel | 600V | 10A | 0.65ohm | TO-247 | Through Hole | 10V | 3.75V | 156W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU014PBF
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SC11070 |
Power MOSFET, N Channel, 60 V, 8.4 A, 0.2 ohm, TO-251AA, Through Hole VISHAY The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissi...
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N Channel | 60V | 8.4A | 0.2ohm | TO-251AA | Through Hole | 10V | 4V | 30W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF830PBF
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SC11101 |
Power MOSFET, N Channel, 500 V, 4.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY The IRF830PBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyna...
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N Channel | 500V | 4.5A | 1.5ohm | TO-220AB | Through Hole | 10V | 4V | 74W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP264PBF
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SC11174 |
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole VISHAY The IRFP264PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the require...
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N Channel | 250V | 38A | 0.075ohm | TO-247AC | Through Hole | 10V | 4V | 280W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9620
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SCIRF9620 |
Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm • Transistor Case Style : TO-220AB • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 40W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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P Channel | 200V | 3.5A | 1.5ohm | TO-220AB | Through Hole | 10V | 2V | 40W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||