Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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P Channel | 100V | 23A | 0.117ohm | - | Through Hole | 10V | 4V | 140W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZVP2110A
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SC06974 |
Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
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P Channel | 100V | 230mA | 8ohm | TO-226AA | Through Hole | 10V | 3.5V | 700mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS355AN
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SC06991 |
Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount ONSEMI The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...
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N Channel | 30V | 1.7A | 0.065ohm | - | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS352AP
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SC11034 |
Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount ONSEMI The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...
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P Channel | 30V | 900mA | 0.25ohm | - | Surface Mount | 10V | 1.7V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN338P
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SC11041 |
Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount ONSEMI The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...
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P Channel | 20V | 1.6A | 0.13ohm | - | Surface Mount | 4.5V | 800mV | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540ZPBF
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SC11108 |
Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole INFINEON The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 100V | 36A | 0.0265ohm | - | Through Hole | 10V | 4V | 92W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9024PBF
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SC11199 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...
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P Channel | 60V | 8.8A | 0.28ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 42W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2402PBF
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SC06986 |
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount INFINEON The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...
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N Channel | 20V | 1.2A | 0.25ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 540mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310F
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SC07001 |
Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...
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N Channel | 100V | 100mA | 10ohm | SOT-23 | Surface Mount | 10V | 2.4V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2907ZPBF
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SC08253 |
Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole INFINEON The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...
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N Channel | - | - | 0.0045ohm | - | Through Hole | - | - | 330W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3415PBF
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SC11109 |
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole INFINEON The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...
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N Channel | 150V | 37A | 0.042ohm | - | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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N Channel | 55V | 110A | 0.0065ohm | - | Through Hole | 10V | 4V | 170W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | TO-247 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75339P3
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SC12748 |
Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole ONSEMI The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...
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N Channel | 55V | 75A | 0.012ohm | TO-220AB | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520PBF
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SC11123 |
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole VISHAY The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 6A | 0.6ohm | TO-220AB | Through Hole | 10V | 4V | 40W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN358P
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SC07005 |
Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount ONSEMI The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...
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P Channel | 30V | 1.6A | 0.2ohm | - | Surface Mount | 10V | 1.9V | 560mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP12N10L
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SC11126 |
Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole ONSEMI The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...
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N Channel | 100V | 12A | 0.2ohm | - | Through Hole | 5V | 2V | 60W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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N Channel | 30V | 2.2A | 0.065ohm | - | Surface Mount | 4.5V | 700mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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N Channel | 70V | 10A | 0.1ohm | TO-220 | Through Hole | 10V | 3V | 50W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4710PBF
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SC11091 |
Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole INFINEON The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...
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N Channel | - | - | 0.014ohm | - | Through Hole | - | - | 200W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN360P
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SC07006 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...
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P Channel | 30V | 2A | 0.08ohm | - | Surface Mount | 10V | 1.9V | 500mW | 3Pins | 150°C | PowerTrench® MOSFET | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPC50
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SC06289 |
Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole VISHAY • Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm • Transistor Case Style : TO-247AC • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 180W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 600V | 11A | 0.6ohm | TO-247AC | Through Hole | 10V | 2V | 180W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 500mA | 1.2ohm | - | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA70N10.
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SC06322 |
Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source On State Resistance : 0.023ohm • Transistor Mounting : Through Hole • Power Dissipation : 214W • No. of Pins : 3Pins
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N Channel | - | - | 0.023ohm | - | Through Hole | - | - | 214W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP60NF06L
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SC11131 |
Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...
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N Channel | 60V | 60A | 0.014ohm | TO-220 | Through Hole | 10V | 1V | 110W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||