Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS355AN
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SC06991 |
Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount ONSEMI The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltag...
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N Channel | 30V | 1.7A | 0.065ohm | - | Surface Mount | 10V | 1.6V | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9540NPBF
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SC08221 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole INFINEON The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...
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P Channel | 100V | 23A | 0.117ohm | - | Through Hole | 10V | 4V | 140W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZVP2110A
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SC06974 |
Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole DIODES INC. The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
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P Channel | 100V | 230mA | 8ohm | TO-226AA | Through Hole | 10V | 3.5V | 700mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540ZPBF
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SC11108 |
Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole INFINEON The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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1+ €1.638 (€2.01) 25+ €1.4976 (€1.84) 100+ €1.2402 (€1.53) 250+ €1.0764 (€1.32) |
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N Channel | 100V | 36A | 0.0265ohm | - | Through Hole | 10V | 4V | 92W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9024PBF
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SC11199 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...
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P Channel | 60V | 8.8A | 0.28ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 42W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2402PBF
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SC06986 |
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount INFINEON The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...
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N Channel | 20V | 1.2A | 0.25ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 540mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP60NF06L
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SC11131 |
Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole STMICROELECTRONICS The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...
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N Channel | 60V | 60A | 0.014ohm | TO-220 | Through Hole | 10V | 1V | 110W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310F
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SC07001 |
Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...
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N Channel | 100V | 100mA | 10ohm | SOT-23 | Surface Mount | 10V | 2.4V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2907ZPBF
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SC08253 |
Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole INFINEON The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...
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N Channel | - | - | 0.0045ohm | - | Through Hole | - | - | 330W | 3Pins | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3415PBF
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SC11109 |
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole INFINEON The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...
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N Channel | 150V | 37A | 0.042ohm | - | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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1+ €1.2168 (€1.50) 25+ €1.0998 (€1.35) 100+ €0.9828 (€1.21) |
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N Channel | 55V | 110A | 0.0065ohm | - | Through Hole | 10V | 4V | 170W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | TO-247 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75339P3
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SC12748 |
Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole ONSEMI The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...
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N Channel | 55V | 75A | 0.012ohm | TO-220AB | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9520PBF
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SC11123 |
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole VISHAY The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 6A | 0.6ohm | TO-220AB | Through Hole | 10V | 4V | 40W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306A
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SC06975 |
Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole DIODES INC. ZVP3306A is a P-channel enhancement mode vertical DMOS FET. • Drain-source voltage is -60V • Continuous drain current at Tamb=25°C is -160mA • Pulsed drain current is -1.6A • Gate-source voltage is ±20V • Power dissipation at Tamb=25°C is 625mW • Drain-sou...
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P Channel | 60V | 160mA | 14ohm | E-Line | Through Hole | 10V | 3.5V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9Z24NPBF
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SC11122 |
Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole INFINEON The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
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P Channel | 55V | 12A | 0.175ohm | - | Through Hole | 10V | 4V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN4424A
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SC06970 |
Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, TO-226AA, Through Hole DIODES INC. The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage DC-DC converters.
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N Channel | 240V | 260mA | 6ohm | TO-226AA | Through Hole | 10V | 1.3V | 570mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP4424A
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SC06977 |
Power MOSFET, P Channel, 240 V, 200 mA, 15 ohm, TO-226AA, Through Hole DIODES INC. The ZVP4424A is a -240V E-Line P-channel Enhancement Mode Vertical DMOS FET ideal for electronic hook switch. • Low threshold
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P Channel | 240V | 200mA | 15ohm | TO-226AA | Through Hole | 10V | 1.4V | 750mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP50N06
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SC08222 |
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole ONSEMI The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...
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N Channel | 60V | 50A | 0.022ohm | TO-220AB | Through Hole | 10V | 4V | 131W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9530NPBF
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SC08220 |
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...
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P Channel | 100V | 13A | 0.2ohm | - | Through Hole | 10V | 4V | 79W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024NPBF
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SC11062 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole INFINEON The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
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P Channel | 55V | 11A | 0.175ohm | - | Through Hole | 10V | 4V | 38W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530NPBF
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SC08215 |
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole INFINEON The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...
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N Channel | 100V | 17A | 0.09ohm | - | Through Hole | 10V | 4V | 63W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW20NK50Z.
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SC06409 |
Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 17A • Drain Source On State Resistance : 0.23ohm • Transistor Case Style : TO-247 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 190W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 17A | 0.23ohm | TO-247 | Through Hole | 10V | 3.75V | 190W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106A
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SC06962 |
Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole DIODES INC. The ZVN2106A is a N-channel enhancement mode MOSFET with 8A pulsed drain current. • ±20V Gate Source Voltage
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N Channel | 60V | 450mA | 2ohm | TO-226AA | Through Hole | 10V | 2.4V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250PBF
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SC11176 |
Power MOSFET, N Channel, 200 V, 30 A, 0.085 ohm, TO-247AC, Through Hole VISHAY The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 200V | 30A | 0.085ohm | TO-247AC | Through Hole | 10V | 4V | 180W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||