Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R045CP
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SC11154 |
Power MOSFET, N Channel, 650 V, 60 A, 0.04 ohm, TO-247, Through Hole INFINEON The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...
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N Channel | 650V | 60A | 0.04ohm | TO-247 | Through Hole | 10V | 3V | 431W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP3710PBF.
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SC11171 |
Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole INFINEON The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 100V | 57A | 0.025ohm | TO-247AC | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN10LP
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SC06959 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole DIODES INC. The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product
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N Channel | 60V | 270mA | 5ohm | TO-226AA | Through Hole | 10V | 2.5V | 625mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2110A
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SC06963 |
Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole DIODES INC. ZVN2110A is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 100V • Continuous drain current at Tamb=25° is 320mA • Pulsed drain current is 6A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 700mW • Drain-source b...
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N Channel | 100V | 320mA | 4ohm | TO-226AA | Through Hole | 10V | 2.4V | 700mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5305PBF
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SC08218 |
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole INFINEON The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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P Channel | 55V | 31A | 0.06ohm | - | Through Hole | 10V | 4V | 110W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP22N50APBF
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SC11094 |
Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole VISHAY The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current
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N Channel | 500V | 22A | 0.23ohm | TO-247AC | Through Hole | 10V | 4V | 277W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN0545A
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SC06961 |
Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole DIODES INC. The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.
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N Channel | 450V | 90mA | 50ohm | E-Line | Through Hole | 10V | 3V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS270
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SC06958 |
Power MOSFET, N Channel, 60 V, 400 mA, 2 ohm, TO-92, Through Hole ONSEMI The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 400mA | 2ohm | - | Through Hole | 10V | 2.1V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NK50Z.
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SC06019 |
Power MOSFET, N Channel, 500 V, 10 A, 0.48 ohm, TO-220, Through Hole STMICROELECTRONICS • Channel Type : N Channel • Drain Source Voltage Vds : 500V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.48ohm • Transistor Case Style : TO-220 • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 3.75V • Power Dissipation : 125W • No. of Pins : 3Pins • Operating Temperature Max : 150°C
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N Channel | 500V | 10A | 0.48ohm | TO-220 | Through Hole | 10V | 3.75V | 125W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0605
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SC07011 |
Power MOSFET, P Channel, 60 V, 180 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The NDS0605 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, ...
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P Channel | 60V | 180mA | 5ohm | - | Surface Mount | 10V | 1.7V | 360mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFU9024PBF
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SC11066 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-251AA, Through Hole VISHAY The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power diss...
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P Channel | 60V | 8.8A | 0.28ohm | TO-251AA | Through Hole | 10V | 4V | 50W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTF3055L108T1G
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SC11060 |
Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount ONSEMI The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 3A | 0.12ohm | SOT-223 | Surface Mount | 5V | 1.68V | 2.1W | 4Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF630NPBF
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SC11083 |
Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole INFINEON The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...
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N Channel | 200V | 9.3A | 0.3ohm | TO-220AB | Through Hole | 10V | 4V | 82W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF640NPBF
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SC11077 |
Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole INFINEON The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...
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N Channel | 200V | 18A | 0.15ohm | - | Through Hole | 10V | 4V | 150W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2402PBF
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SC06986 |
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount INFINEON The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with...
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N Channel | 20V | 1.2A | 0.25ohm | SOT-23 | Surface Mount | 4.5V | 700mV | 540mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9024PBF
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SC11199 |
Power MOSFET, P Channel, 60 V, 8.8 A, 0.28 ohm, TO-252 (DPAK), Surface Mount VISHAY The IRFR9024PBF is a -60V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, ...
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P Channel | 60V | 8.8A | 0.28ohm | TO-252 (DPAK) | Surface Mount | 10V | 4V | 42W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF540ZPBF
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SC11108 |
Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole INFINEON The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 100V | 36A | 0.0265ohm | - | Through Hole | 10V | 4V | 92W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP0545A
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SC06972 |
Power MOSFET, P Channel, 450 V, 45 mA, 150 ohm, E-Line, Through Hole DIODES INC. The ZVP0545A is a -450V E-Line P-channel Enhancement Mode Vertical DMOS FET with 150Ω resistance and 700mW power dissipation.
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P Channel | 450V | 45mA | 150ohm | E-Line | Through Hole | 10V | 3V | 700mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170P
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SC06957 |
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, E-Line, Through Hole DIODES INC. The BS170P is a N-channel enhancement-mode Vertical DMOSFET with moulded plastic case and solderable matte tin plated terminals as per MIL-STD-202 standard. • Halogen-free, Green device • Qualified to AEC-Q101 standards for high reliability • UL94V-0 Flamm...
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N Channel | 60V | 270mA | 5ohm | E-Line | Through Hole | 10V | 3V | 625mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF1404PBF
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SC11147 |
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole INFINEON The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...
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N Channel | 40V | 162A | 0.004ohm | - | Through Hole | 10V | 4V | 200W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002LT1G
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SC11038 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount ONSEMI The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current. • Halogen-free/BFR-free • ±20VDC Gate to source voltage • 60VDC Drain to gate voltage • 417°C/W Thermal resistance, junction to amb...
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N Channel | 60V | 115mA | 7.5ohm | SOT-23 | Surface Mount | 10V | 2.5V | 200mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A18K
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SC11200 |
Power MOSFET, P Channel, 60 V, 10.4 A, 0.055 ohm, TO-252 (DPAK), Surface Mount DIODES INC. The ZXMP6A18K is a -60V P-channel Enhancement Mode MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applicati...
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P Channel | 60V | 10.4A | 0.055ohm | TO-252 (DPAK) | Surface Mount | 10V | 1V | 4.3W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN335N
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SC06983 |
Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate threshold voltage • Hi...
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N Channel | 20V | 1.7A | 0.07ohm | - | Surface Mount | 4.5V | 900mV | 500mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170
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SC06956 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole ONSEMI The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...
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N Channel | 60V | 500mA | 5ohm | - | Through Hole | 10V | 2.1V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQA70N10.
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SC06322 |
Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 70A • Drain Source On State Resistance : 0.023ohm • Transistor Mounting : Through Hole • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 2V • Power Dissipation : 214W • No. of Pins : 3Pins • Operating Temperature Max : 175°C
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N Channel | 100V | 70A | 0.023ohm | - | Through Hole | 10V | 2V | 214W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||