MOSFET Transistors

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BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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N Channel 20V 2.3A 0.041ohm
SI2356DS-T1-GE3
SI2356DS-T1-GE3 - Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD

SC16787

Power MOSFET, N Channel, 40V, 4.3A, 0.042 Ohm, SOT-23, SMD

VISHAY

The SI2356DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for DC / DC converter, load switches, LED backlighting and power management applications. • TrenchFET® Power MOSFET • 100% Rg Tested

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N Channel 40V 4.3A 0.042ohm
ZXMP6A17E6TA
ZXMP6A17E6TA - Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

SC16832

Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...

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P Channel 60V 3A 0.125ohm
SI2301CDS-T1-E3
SI2301CDS-T1-E3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount

SC16887

Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount

VISHAY

Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...

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P Channel 20V 3.1A 0.11ohm
SI7850DP-T1-E3
SI7850DP-T1-E3 - Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

SC16843

Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...

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N Channel 60V 10.3A 0.022ohm
FDP2532
FDP2532 - N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB

SC16972

N Channel Power MOSFET, PowerTrench, 150V, 79A, 0.014 Ohm, TO-220AB

ONSEMI

• Low miller charge • Low Qrr body diode • UIS Capability (single pulse and repetitive pulse)

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N Channel 150V 79A 0.014ohm
IRFP9140NPBF
IRFP9140NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

SC17021

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

INFINEON

The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

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P Channel 100V 23A 0.117ohm
BSS126H6327XTSA2
BSS126H6327XTSA2 - Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount

SC16946

Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount

INFINEON

The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...

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N Channel 600V 21mA 280ohm
ZXM61N02F
ZXM61N02F - Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

SC16913

Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...

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N Channel 20V 1.7A 0.18ohm
BSS84DW-7-F
BSS84DW-7-F - Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

SC16803

Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

DIODES INC.

The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...

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P Channel - - -
IRFBC40APBF
IRFBC40APBF - Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole

SC16969

Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole

VISHAY

The IRFBC40APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications. • Low gate charge Qg results in simple drive requirement • Impro...

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N Channel 600V 6.2A 1.2ohm
IRLB4132PBF
IRLB4132PBF - Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole

SC17012

Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole

INFINEON

HEXFET® Power MOSFET in TO-220AB package optimized for UPS/inverter applications. • Very low RDS(on) at 4.5V VGS • Ultra-low gate impedance • Fully characterized avalanche voltage and current

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N Channel 30V 78A 0.0025ohm
SI2369DS-T1-GE3
SI2369DS-T1-GE3 - Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount

SC16757

Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount

VISHAY

The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology. • 100% Rg Tested • Halogen-free

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P Channel 30V 7.6A 0.024ohm
FQT5P10TF
FQT5P10TF - Power MOSFET, P Channel, 100 V, 1 A, 0.82 ohm, SOT-223, Surface Mount

SC16874

Power MOSFET, P Channel, 100 V, 1 A, 0.82 ohm, SOT-223, Surface Mount

ONSEMI

The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche en...

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P Channel 100V 1A 0.82ohm
IXFN180N15P
IXFN180N15P - MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V

SC17025

MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge a...

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N Channel 150V 150A 0.011ohm
CSD18504Q5A
CSD18504Q5A - SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

SC16683

SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

TEXAS INSTRUMENTS

The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...

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N Channel 40V 50A 0.0053ohm
IRF840BPBF
IRF840BPBF - N Channel Power MOSFET, 500V, 8.7A, 0.7 Ohm, TO-220AB

SC16977

N Channel Power MOSFET, 500V, 8.7A, 0.7 Ohm, TO-220AB

VISHAY

• Suitable for displays (LCD or plasma), server and telecom power supplies, industrial applications such as welding, induction heating and motor drivers

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N Channel 500V 8.7A 0.7ohm
HUF75344G3
HUF75344G3 - Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole

SC16989

Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole

ONSEMI

The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...

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N Channel 55V 75A 0.0065ohm
FDH44N50
FDH44N50 - Power MOSFET, General Purpose, N Channel, 500 V, 44 A, 0.11 ohm, TO-247, Through Hole

SC17002

Power MOSFET, General Purpose, N Channel, 500 V, 44 A, 0.11 ohm, TO-247, Through Hole

ONSEMI

The FDH44N50 is a 500V N-channel Power MOSFET based on planar stripe and DMOS technology. This SMPS series MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's r...

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N Channel 500V 44A 0.11ohm
FDP5800
FDP5800 - Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole

SC16966

Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole

ONSEMI

The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...

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N Channel 60V 80A 0.0046ohm
FQP17P10
FQP17P10 - Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole

SC08207

Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole

ONSEMI

The FQP17P10 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high av...

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P Channel 100V 16.5A 0.19ohm