MOSFET Transistors

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SQ1421EDH-T1_GE3
SQ1421EDH-T1_GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.29 ohm, SC-70, Surface Mount

SC21605

Power MOSFET, P Channel, 60 V, 1.6 A, 0.29 ohm, SC-70, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 1.6A • Drain Source On State Resistance : 0.29ohm

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P Channel 60V 1.6A 0.29ohm
2N7002W-7-F
2N7002W-7-F - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-323, Surface Mount

SC21290

Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-323, Surface Mount

DIODES INC.

The 2N7002W-7-F is a N-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • Fast ...

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N Channel 60V 115mA 7.5ohm
DMP3099L-7
DMP3099L-7 - Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

SC21313

Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount

DIODES INC.

DMP3099L-7 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applicati...

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P Channel 30V 3.8A 0.065ohm
SI7113DN-T1-GE3
SI7113DN-T1-GE3 - Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount

SC21597

Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount

VISHAY

• P-channel 100V (D-S) TrenchFET® power MOSFET • Low thermal resistance PowerPAK® package with Low 1.07mm profile • UIS and Rg tested • Suitable for active clamp in intermediate DC/DC power supplies

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P Channel 100V 13.2A 0.134ohm
PMV30UN2R
PMV30UN2R - Power MOSFET, N Channel, 20 V, 5.4 A, 0.032 ohm, SOT-23, Surface Mount

SC21452

Power MOSFET, N Channel, 20 V, 5.4 A, 0.032 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...

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N Channel 20V 5.4A 0.032ohm
NX3008CBKS,115
NX3008CBKS,115 - Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm

SC21423

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm

NEXPERIA

The NX3008CBKS is a N/P-channel complementary enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for level shifter, power supply converter, load switch and switching circuit applications. • ...

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Complementary N and P Channel - - -
IRF730APBF
IRF730APBF - Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole

SC21576

Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole

VISHAY

The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective COSS specified • Simple drive requirem...

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N Channel 400V 5.5A 1ohm
IRFR110PBF
IRFR110PBF - Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

SC21578

Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

VISHAY

• N-channel power MOSFET in DPAK (TO-252) package • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling

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N Channel 100V 4.3A 0.54ohm
SI2319DDS-T1-GE3
SI2319DDS-T1-GE3 - Power MOSFET, P Channel, 40 V, 3.6 A, 0.075 ohm, SOT-23, Surface Mount

SC21593

Power MOSFET, P Channel, 40 V, 3.6 A, 0.075 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 3.6A • Drain Source On State Resistance : 0.075ohm

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P Channel 40V 3.6A 0.075ohm
IRFB3806PBF
IRFB3806PBF - Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-220AB, Through Hole

SC20270

Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3806PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized capacit...

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N Channel 60V 43A 0.0158ohm
IRF9630PBF
IRF9630PBF - Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole

SC21577

Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole

VISHAY

The IRF9630PBF is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerc...

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P Channel 200V 6.5A 0.8ohm
STD20NF06LT4
STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

SC21521

Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD20NF06LT4 is a STripFETâ„¢ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Sizeâ„¢ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...

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N Channel 60V 24A 0.04ohm
STN4NF03L
STN4NF03L - Power MOSFET, N Channel, 30 V, 6.5 A, 0.05 ohm, SOT-223, Surface Mount

SC21523

Power MOSFET, N Channel, 30 V, 6.5 A, 0.05 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

The STN4NF03L is a STripFETâ„¢ II N-channel Power MOSFET developed using unique Single Feature Sizeâ„¢ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps ...

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N Channel 30V 6.5A 0.05ohm
IRF7341TRPBFXTMA1
IRF7341TRPBFXTMA1 - Dual Mosfet, N-Ch, 55V, 4.7A, SO-8

SC20269

Dual Mosfet, N-Ch, 55V, 4.7A, SO-8

INFINEON

• Channel Type : Dual N Channel

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Dual N Channel - - -
TP0610K-T1-E3
TP0610K-T1-E3 - Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount

SC21613

Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount

VISHAY

The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. • Low ON-resistance • High-side switching • Low threshold • 20ns Fast switching spee...

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P Channel 60V 185mA 6ohm
BSS816NWH6327XTSA1
BSS816NWH6327XTSA1 - Power MOSFET, N Channel, 20 V, 1.4 A, 0.16 ohm, SOT-323, Surface Mount

SC21340

Power MOSFET, N Channel, 20 V, 1.4 A, 0.16 ohm, SOT-323, Surface Mount

INFINEON

• N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101

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N Channel 20V 1.4A 0.16ohm
FDT86256
FDT86256 - Power MOSFET, N Channel, 150 V, 3 A, 0.845 ohm, SOT-223, Surface Mount

SC21477

Power MOSFET, N Channel, 150 V, 3 A, 0.845 ohm, SOT-223, Surface Mount

ONSEMI

• Channel Type : N Channel • Drain Source Voltage Vds : 150V • Continuous Drain Current Id : 3A • Drain Source On State Resistance : 0.845ohm

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N Channel 150V 3A 0.845ohm
DMN62D0U-7
DMN62D0U-7 - Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

SC21310

Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount

DIODES INC.

DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...

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N Channel 60V 380mA 2ohm
SQ2389ES-T1_GE3
SQ2389ES-T1_GE3 - Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

SC21607

Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm

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P Channel 40V 4.1A 0.094ohm
NX3008PBKW,115
NX3008PBKW,115 - Power MOSFET, P Channel, 30 V, 200 mA, 4.1 ohm, SOT-323, Surface Mount

SC21424

Power MOSFET, P Channel, 30 V, 200 mA, 4.1 ohm, SOT-323, Surface Mount

NEXPERIA

The NX3008PBKW is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for relay driver, high-speed line driver and high-side loadswitch. • Logic-level compatible • Very fast s...

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P Channel 30V 200mA 4.1ohm
SI3456DDV-T1-GE3
SI3456DDV-T1-GE3 - Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

SC21595

Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount

VISHAY

The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications. • Halogen-free • -55 to 150°C Operating temperature range

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N Channel 30V 6.3A 0.04ohm
IPD90P04P405ATMA2
IPD90P04P405ATMA2 - Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD

SC20574

Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD

INFINEON

IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...

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P Channel 40V 90A 0.0047ohm
2N7002E-7-F
2N7002E-7-F - Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount

SC21289

Power MOSFET, N Channel, 60 V, 250 mA, 3 ohm, SOT-23, Surface Mount

DIODES INC.

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 3ohm

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N Channel 60V 250mA 3ohm
DMN10H220L-7
DMN10H220L-7 - Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount

SC21309

Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount

DIODES INC.

DMN10H220L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications and loa...

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N Channel 100V 1.4A 0.22ohm
ZXMN3A01F
ZXMN3A01F - Power MOSFET, N Channel, 30 V, 2 A, 0.12 ohm, SOT-23, Surface Mount

SC21333

Power MOSFET, N Channel, 30 V, 2 A, 0.12 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMN3A01F is a N-channel enhancement-mode new generation TRENCH MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage application...

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N Channel 30V 2A 0.12ohm