MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL2705TRPBF
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SC21342 |
Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount INFINEON The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 3.8A | 0.04ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPP20N60C3XKSA1
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SC21344 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through Hole INFINEON The SPP20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 20.7A | 0.19ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM2306CX RFG
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SC21549 |
Power MOSFET, N Channel, 30 V, 3.5 A, 0.046 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2306CX is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology. • ±20V Gate-source voltage • 3.5A Continuous source current • 75°C/W Junction-to-case thermal resistance • 130°C/...
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N Channel | 30V | 3.5A | 0.046ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP4051LK3-13
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SC21314 |
Power MOSFET, P Channel, 40 V, 10.5 A, 0.051 ohm, TO-252 (DPAK), Surface Mount DIODES INC. DMP4051LK3-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications...
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P Channel | 40V | 10.5A | 0.051ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ1421EDH-T1_GE3
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SC21605 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.29 ohm, SC-70, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 1.6A • Drain Source On State Resistance : 0.29ohm
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P Channel | 60V | 1.6A | 0.29ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002W-7-F
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SC21290 |
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-323, Surface Mount DIODES INC. The 2N7002W-7-F is a N-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • Fast ...
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N Channel | 60V | 115mA | 7.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM55P06-19L-E3
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SC21612 |
Power MOSFET, P Channel, 60 V, 55 A, 0.019 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM55P06-19L-E3 is a -60V P-channel TrenchFET® Power MOSFET.
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P Channel | 60V | 55A | 0.019ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008CBKS,115
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SC21423 |
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 350 mA, 350 mA, 1 ohm NEXPERIA The NX3008CBKS is a N/P-channel complementary enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for level shifter, power supply converter, load switch and switching circuit applications. • ...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF730APBF
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SC21576 |
Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole VISHAY The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective COSS specified • Simple drive requirem...
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N Channel | 400V | 5.5A | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR110PBF
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SC21578 |
Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount VISHAY • N-channel power MOSFET in DPAK (TO-252) package • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling
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N Channel | 100V | 4.3A | 0.54ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319DDS-T1-GE3
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SC21593 |
Power MOSFET, P Channel, 40 V, 3.6 A, 0.075 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 3.6A • Drain Source On State Resistance : 0.075ohm
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P Channel | 40V | 3.6A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D26Z
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SC21472 |
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole ONSEMI The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. Thi...
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ479EP-T1_GE3
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SC21608 |
Power MOSFET, P Channel, 80 V, 32 A, 0.033 ohm, PowerPAK SO, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 80V • Continuous Drain Current Id : 32A • Drain Source On State Resistance : 0.033ohm
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P Channel | 80V | 32A | 0.033ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9630PBF
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SC21577 |
Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole VISHAY The IRF9630PBF is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerc...
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P Channel | 200V | 6.5A | 0.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD20NF06LT4
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SC21521 |
Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less cri...
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N Channel | 60V | 24A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STN4NF03L
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SC21523 |
Power MOSFET, N Channel, 30 V, 6.5 A, 0.05 ohm, SOT-223, Surface Mount STMICROELECTRONICS The STN4NF03L is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps ...
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N Channel | 30V | 6.5A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7341TRPBFXTMA1
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SC20269 |
Dual Mosfet, N-Ch, 55V, 4.7A, SO-8 INFINEON • Channel Type : Dual N Channel
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Dual N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC009NE2LS5IATMA1
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SC21338 |
Power MOSFET, N Channel, 25 V, 100 A, 950 µohm, TDSON, Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 25V • Continuous Drain Current Id : 100A • Drain Source On State Resistance : 950µohm
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N Channel | 25V | 100A | 950µohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4463CDY-T1-GE3
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SC21596 |
Power MOSFET, P Channel, 20 V, 18.6 A, 0.008 ohm, SOIC, Surface Mount VISHAY The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature rang...
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P Channel | 20V | 18.6A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS0610
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SC21483 |
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used...
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P Channel | 60V | 120mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP0610K-T1-E3
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SC21613 |
Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount VISHAY The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers. • Low ON-resistance • High-side switching • Low threshold • 20ns Fast switching spee...
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P Channel | 60V | 185mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008PBKW,115
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SC21424 |
Power MOSFET, P Channel, 30 V, 200 mA, 4.1 ohm, SOT-323, Surface Mount NEXPERIA The NX3008PBKW is a P-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for relay driver, high-speed line driver and high-side loadswitch. • Logic-level compatible • Very fast s...
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P Channel | 30V | 200mA | 4.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN62D0U-7
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SC21310 |
Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount DIODES INC. DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications in...
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N Channel | 60V | 380mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2389ES-T1_GE3
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SC21607 |
Power MOSFET, P Channel, 40 V, 4.1 A, 0.094 ohm, SOT-23, Surface Mount VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 4.1A • Drain Source On State Resistance : 0.094ohm
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P Channel | 40V | 4.1A | 0.094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2120U-7
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SC21311 |
Power MOSFET, P Channel, 20 V, 3.8 A, 0.062 ohm, SOT-23, Surface Mount DIODES INC. DMP2120U-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications i...
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P Channel | 20V | 3.8A | 0.062ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||