MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K-T1-GE3
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SC16724 |
Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount VISHAY The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...
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N Channel | 60V | 190mA | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP6NK90Z
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SC15822 |
Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220 STMICROELECTRONICS The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, speci...
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N Channel | 900V | 5.8A | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDPF18N50
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SC16953 |
Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220F, Through Hole ONSEMI The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...
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1+ €2.3517 (€2.89) 10+ €2.1411 (€2.63) 100+ €1.8252 (€2.24) |
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N Channel | 500V | 18A | 0.265ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0030TRPBF
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SC16720 |
Power MOSFET, N Channel, 30 V, 5.3 A, 0.027 ohm, SOT-23, Surface Mount INFINEON The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...
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N Channel | 30V | 5.3A | 0.027ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV37ENEAR
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SC16985 |
SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB NEXPERIA The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...
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N Channel | 60V | 3.5A | 0.049ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBE30PBF
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SC16997 |
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...
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1+ €0.9945 (€1.22) 10+ €0.8541 (€1.05) 100+ €0.7839 (€0.96) |
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N Channel | 800V | 4.1A | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUP53P06-20-E3
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SC16987 |
Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole VISHAY The SUP53P06-20-E3 is a -60V P-channel TrenchFET® Power MOSFET. • 100% UIS Tested
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P Channel | 60V | 53A | 0.0195ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205PBF
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SC16899 |
Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole INFINEON The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
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N Channel | 55V | 110A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP5NK80ZFP
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SC16947 |
Power MOSFET, N Channel, 800 V, 4.3 A, 2.4 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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1+ €0.8307 (€1.02) 10+ €0.6669 (€0.82) 100+ €0.5733 (€0.71) |
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N Channel | 800V | 4.3A | 2.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFML8244TRPBF
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SC16788 |
Power MOSFET, N Channel, 25 V, 5.8 A, 0.024 ohm, SOT-23, Surface Mount INFINEON The IRFML8244TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Lower switching losses • Environment-f...
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N Channel | 25V | 5.8A | 0.024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF7N65C
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SC16961 |
Power MOSFET, N Channel, 650 V, 7 A, 1.4 ohm, TO-220F, Through Hole ONSEMI The FQPF7N65C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and ...
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N Channel | 650V | 7A | 1.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB8721PBF
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SC16954 |
Power MOSFET, N Channel, 30 V, 31 A, 0.0087 ohm, TO-220AB, Through Hole INFINEON The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor ...
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N Channel | 30V | 31A | 0.0087ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7252DP-T1-GE3
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SC16806 |
Dual MOSFET, N Channel, 100V, 36.7A, 0.014 Ohm, PowerPAK SO, SMD VISHAY Dual N-channel 100V (D-S) MOSFET for use in primary side switching, synchronous rectification and DC/AC inverters. • TrenchFET® power MOSFET • 100% Rg tested
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1+ €1.8486 (€2.27) 10+ €1.6497 (€2.03) 100+ €1.17 (€1.44) |
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKVL
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SC16816 |
Power MOSFET, N Channel, 60 V, 350 mA, 1.6 ohm, TO-236AB, Surface Mount NEXPERIA • Suitable for Relay driver, High-speed line driver, Low-side loadswitch and switching circuits applications • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 2kV • AEC-Q101 qualified
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5+ €0.0702 (€0.09) 25+ €0.0468 (€0.06) 100+ €0.0351 (€0.04) |
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N Channel | 60V | 350mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4435DY.
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SC16856 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.015 ohm, SOIC, Surface Mount ONSEMI The SI4435DY is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...
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P Channel | 30V | 8.8A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUD50P06-15-GE3
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SC16924 |
Power MOSFET, P Channel, 60 V, 50 A, 0.015 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50P06-15-GE3 is a 60V P-channel TrenchFET® Power MOSFET with power dissipation at 2.5W. This power MOSFET is designed for load switch. • ±20V Gate-source voltage
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P Channel | 60V | 50A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44ZPBF
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SC16925 |
Power MOSFET, Automotive, N Channel, 55 V, 51 A, 0.0139 ohm, TO-220AB, Through Hole INFINEON The IRFZ44ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching s...
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N Channel | 55V | 51A | 0.0139ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138BK,215
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SC15993 |
Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD NEXPERIA The BSS138BK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 360mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2323CDS-T1-GE3
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SC16846 |
Power MOSFET, P Channel, 20 V, 6 A, 0.039 ohm, SOT-23, Surface Mount VISHAY The SI2323CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, PA switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 20V | 6A | 0.039ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000BU
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SC16840 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole ONSEMI The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applicatio...
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N Channel | 60V | 200mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP3N150
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SC16950 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 9 ohm, TO-220, Through Hole STMICROELECTRONICS The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on ...
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N Channel | 1.5kV | 2.5A | 9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP10NK60ZFP
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SC17005 |
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...
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N Channel | 600V | 10A | 0.75ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123LT1G
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SC16745 |
SMD N Channel Power MOSFET, 100V, 170mA, 6 Ohm, SOT 23 ONSEMI • AEC-Q101 Qualified • PPAP capable
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N Channel | 100V | 170mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP250,115
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SC16760 |
Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount NEXPERIA The BSP250,115 is a -30V P-channel Enhancement Mode vertical D-MOS Transistor with high speed switching and low on resistance makes this device suitable for use in low loss motor, actuator drivers and power switching applications. • 150°C Junction temperat...
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P Channel | 30V | 1A | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4101PT1G
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SC16827 |
Power MOSFET, P Channel, 20 V, 3.2 A, 0.085 ohm, SOT-23, Surface Mount ONSEMI The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications. • Leading -20V Tr...
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P Channel | 20V | 3.2A | 0.085ohm |