MOSFET Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML9301TRPBF
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SC16719 |
Power MOSFET, P Channel, 30 V, 3.6 A, 0.064 ohm, SOT-23, Surface Mount INFINEON The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...
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P Channel | 30V | 3.6A | 0.064ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH111BKR
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SC16763 |
Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD NEXPERIA The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...
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N Channel | 55V | 210mA | 4ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN3404L-7
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SC16731 |
Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount DIODES INC. The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...
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N Channel | 30V | 4.2A | 0.028ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIR422DP-T1-GE3
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SC16864 |
Power MOSFET, N Channel, 40 V, 40 A, 0.0066 ohm, PowerPAK SO, Surface Mount VISHAY The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...
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1+ €0.966 (€1.19) 10+ €0.805 (€0.99) 100+ €0.5405 (€0.66) |
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N Channel | 40V | 40A | 0.0066ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD85P04P4L06ATMA1
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SC15972 |
Power MOSFET, P Channel, 40V, 85A, 0.0053 Ohm, TO-252 (DPAK), SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 85A • Drain Source On State Resistance : 0.0064ohm
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P Channel | 40V | 85A | 0.0064ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP2104N3-G
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SC16920 |
P Channel Power MOSFET, Vertical DMOS FET, 40V, 175mA, 6 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 40V | 175mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9321TRPBF
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SC15976 |
Power MOSFET, P Channel, 30V, 15A, 0.0059 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 15A • Drain Source On State Resistance : 0.0072ohm
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P Channel | 30V | 15A | 0.0072ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQM120P06-07L_GE3
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SC16844 |
SMD P Channel Power MOSFET, 60V, 120A, 0.0056 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100% Rg and UIS Tested
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P Channel | 60V | 120A | 0.0067ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6401TRPBF
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SC16733 |
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount INFINEON The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...
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P Channel | 12V | 4.3A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD2955T4G
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SC16860 |
Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...
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P Channel | 60V | 12A | 0.155ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP4NK60ZFP
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SC16986 |
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 4A | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9120NTRPBF
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SC16875 |
Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 100V | 6.6A | 0.48ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBG20PBF
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SC16930 |
Power MOSFET, N Channel, 1 kV, 1.3 A, 11 ohm, TO-220AB, Through Hole VISHAY The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...
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N Channel | 1kV | 1.3A | 11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB3034PBF
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SC16937 |
Power MOSFET, N Channel, 40 V, 195 A, 0.0017 ohm, TO-220AB, Through Hole INFINEON The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...
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N Channel | 40V | 195A | 0.0017ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NM60FD
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SC16952 |
N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB STMICROELECTRONICS The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...
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N Channel | 600V | 11A | 0.45ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R017C7XKSA1
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SC17026 |
Power MOSFET, N Channel, 600 V, 109 A, 0.017 ohm, TO-247, Through Hole INFINEON 600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...
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N Channel | 600V | 109A | 0.017ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138K
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SC16726 |
Power MOSFET, N Channel, 50 V, 220 mA, 1.6 ohm, SOT-23, Surface Mount ONSEMI The BSS138K is a N-channel logic level enhancement mode Field Effect Transistor features low input capacitance, low-on resistance, low gate threshold voltage and fast switching speed. • Low input/output leakage • ±12V Gate-source voltage • Green product
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N Channel | 50V | 220mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002DW
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SC15983 |
Dual MOSFET, N Channel, 60V, 115mA, 1.6 Ohm, SOT-363, SMD ONSEMI The 2N7002DW is an N-channel Enhancement Mode Field Effect Transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed and low input/output leakage.
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138P,215
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SC16002 |
Power MOSFET, N Channel, 60V, 360mA, 0.9 Ohm, SOT-23, SMD NEXPERIA The BSS138P is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV • Logic Level Compatible • AEC-Q101 Qualified
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N Channel | 60V | 360mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPT007N06NATMA1
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SC16792 |
Power MOSFET, N Channel, 60 V, 300 A, 750 µohm, HSOF, Surface Mount INFINEON The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction...
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N Channel | 60V | 300A | 750µohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP170PH6327XTSA1
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SC16865 |
SMD P Channel Power MOSFET, 60V, 1.9A, 0.239 Ohm, SOT-223 INFINEON • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogenfree according to IEC61249221
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P Channel | 60V | 1.9A | 0.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD17308Q3
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SC16684 |
SMD Power MOSFET N Channel NexFET Transistor, 30V, 47A TEXAS INSTRUMENTS The CSD17308Q3 is a 30V N-channel NexFET™ Power MOSFET with low thermal resistance and optimized for 5V gate drive. It is been designed to minimize losses in power conversion and optimized for control or synchronous FET applications. Suitable for point of ...
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N Channel | 30V | 47A | 0.0094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A13FTA
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SC16729 |
Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A13FTA is a -60V P-channel enhancement mode MOSFET with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switchi...
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P Channel | 60V | 1.1A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7343TRPBF
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SC16808 |
Dual MOSFET, Complementary N and P Channel, 55V, 4.7A, 0.043 Ohm, SOIC, SMD INFINEON The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extre...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K-T1-GE3
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SC16724 |
Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount VISHAY The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...
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N Channel | 60V | 190mA | 2ohm |