MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7489DP-T1-GE3
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SC16825 |
Power MOSFET, P Channel, 100 V, 28 A, 0.041 ohm, PowerPAK SO, Surface Mount VISHAY The SI7489DP-T1-GE3 is a -100V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definit...
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P Channel | 100V | 28A | 0.041ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN339AN
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SC16732 |
Power MOSFET, N Channel, 20 V, 3 A, 0.035 ohm, SOT-23, Surface Mount ONSEMI The FDN339AN is a 20V N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power...
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N Channel | 20V | 3A | 0.035ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP460BPBF
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SC16928 |
N Channel Power MOSFET, 500V, 20A, 0.2 Ohm, TO-247AC VISHAY • Suitable applications: displays for LCD or plasma TVs, server & telecom power supplies, industrial equipment such as welding, induction heating and motor drives
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N Channel | 500V | 20A | 0.25ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8858CZ
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SC16689 |
SMD Dual MOSFET N and P Channel Transistor, PowerTrench, SOIC, 30V, 8.6A ONSEMI The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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Complementary N and P Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS83PH6327XTSA1
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SC16766 |
Power MOSFET, P Channel, 60 V, 330 mA, 2 ohm, SOT-23, Surface Mount INFINEON The BSS83P H6327 is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. • Enhancement-mode • Avalan...
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P Channel | 60V | 330mA | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7461DP-T1-GE3
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SC16794 |
Power MOSFET, P Channel, 60 V, 8.6 A, 0.0145 ohm, PowerPAK SO, Surface Mount VISHAY The SI7461DP-T1-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Low thermal resistance PowerPAK® package with small size and low 1.07mm profile. Used in active clamp in intermediate DC/DC power supplies. • Halogen-free according to IEC 61249-2-21 definiti...
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P Channel | 60V | 8.6A | 0.0145ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TSM2314CX RFG
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SC16741 |
Power MOSFET, N Channel, 20 V, 4.9 A, 0.027 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2314CX is a N-channel MOSFET with advanced Trench process technology and ±12V gate source voltage. • High Density Cell Design for Ultra Low On-resistance
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N Channel | 20V | 4.9A | 0.027ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2305UX-7
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SC16903 |
Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount DIODES INC. DMG2305UX-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications incl...
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P Channel | 20V | 4.2A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6344TRPBF
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SC16730 |
Power MOSFET, N Channel, 30 V, 5 A, 0.029 ohm, SOT-23, Surface Mount INFINEON The IRLML6344TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 30V | 5A | 0.029ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4401DDY-T1-GE3
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SC16821 |
Power MOSFET, P Channel, 40 V, 16.1 A, 0.015 ohm, SOIC, Surface Mount VISHAY The SI4401DDY-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and POL applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 40V | 16.1A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4020PBF
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SC16951 |
Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole INFINEON The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve ...
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N Channel | 200V | 18A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19534Q5AT
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SC16686 |
SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A TEXAS INSTRUMENTS The CSD19534Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications. • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Halogen-free...
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N Channel | 100V | 50A | 0.0151ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLL014NTRPBF
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SC16905 |
Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount INFINEON The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 2A | 0.14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2308BDS-T1-GE3
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SC16728 |
Power MOSFET, N Channel, 60 V, 2.3 A, 0.156 ohm, TO-236, Surface Mount VISHAY The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature. • 100% Rg Tested • 100% UIS Tested • ±20V Gate-source voltage
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N Channel | 60V | 2.3A | 0.156ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP2106N3-G
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SC15966 |
Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92 MICROCHIP • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 9ohm
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P Channel | 60V | 250mA | 9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7149ADP-T1-GE3
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SC16823 |
SMD P Channel Power MOSFET, 30V, 50A, 0.0042 Ohm, PowerPAK SO VISHAY • Suitable for battery, load and adaptor switches, notebook computers and notebook battery packs • TrenchFET® Power MOSFET • Low On-Resistance for Low Voltage Drop • Extended VGS max. Rating: 25V
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P Channel | 30V | 50A | 0.0052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQT7N10LTF
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SC16853 |
Power MOSFET, N Channel, 100 V, 1.7 A, 0.35 ohm, SOT-223, Surface Mount ONSEMI The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...
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N Channel | 100V | 1.7A | 0.35ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2318CDS-T1-GE3
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SC16746 |
Power MOSFET, N Channel, 40 V, 3.9 A, 0.042 ohm, TO-236, Surface Mount VISHAY • N-channel 40V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, load switch
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N Channel | 40V | 3.9A | 0.042ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQT5P10TF
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SC16874 |
Power MOSFET, P Channel, 100 V, 1 A, 1.05 ohm, SOT-223, Surface Mount ONSEMI The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche en...
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P Channel | 100V | 1A | 1.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIS412DN-T1-GE3
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SC16901 |
Power MOSFET, N Channel, 30 V, 12 A, 0.024 ohm, PowerPAK 1212, Surface Mount VISHAY The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wi...
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N Channel | 30V | 12A | 0.024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT439N
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SC16892 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.045 ohm, SOT-223, Surface Mount ONSEMI The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switch...
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N Channel | 30V | 6.3A | 0.045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX7002AKVL
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SC16890 |
SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB NEXPERIA The NX7002AKVL from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drive, high speed line driver, low side...
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N Channel | 60V | 190mA | 4.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDT457N
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SC16734 |
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount ONSEMI The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...
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N Channel | 30V | 5A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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P Channel | 30V | 8.8A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D27Z
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SC15773 |
Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92 ONSEMI The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||