Single MOSFET Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2244TRPBF
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SC16759 |
Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount INFINEON The IRLML2244TRPBF is a P-channel HEXFET® Power MOSFET compatible with existing surface mount techniques. This transistor features lower switching losses, increased reliability and environmentally friendly. • Multi-vendor compatibility • Industry standard ...
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P Channel | 20V | 4.3A | 0.042ohm | SOT-23 | Surface Mount | 4.5V | 1.1V | 1.3W | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84AK,215
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SC16767 |
Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount NEXPERIA The BSS84AK is a P-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Logic-level compatible and very fast switching. Suitable for relay driver and high-speed line driver. • AEC-Q101 Qualified ...
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P Channel | 50V | 180mA | 4.5ohm | SOT-23 | Surface Mount | 10V | 1.6V | 350mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK9875-100A/CUX
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SC15953 |
Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 7A • Drain Source On State Resistance : 0.062ohm • Transistor Case Style : SOT-223 • Transistor Mounting : Surface Mount • Rds(on) Test Voltage : 10V • Gate Source Threshold Voltage Max : 1.5V • Power Dissipation : 8W • No. of Pins : 4Pins • Operating Temperature Max : 150°C • Qualification : AEC-Q101
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N Channel | 100V | 7A | 0.062ohm | SOT-223 | Surface Mount | 10V | 1.5V | 8W | 4Pins | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STP55NF06
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SC15840 |
Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220 STMICROELECTRONICS The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...
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N Channel | 60V | 50A | 0.015ohm | TO-220 | Through Hole | 10V | 3V | 30W | 3Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS331N
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SC16701 |
SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A ONSEMI The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...
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N Channel | 20V | 1.3A | 0.11ohm | SuperSOT | Surface Mount | 4.5V | 700mV | 500mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138BKW,115
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SC16779 |
Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The BSS138BKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit application...
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N Channel | 60V | 320mA | 1ohm | SOT-323 | Surface Mount | 10V | 1.1V | 260mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5305TRPBF
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SC17018 |
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount INFINEON The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
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P Channel | 55V | 31A | 0.065ohm | TO-252AA | Surface Mount | 10V | 4V | 110W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LP0701N3-G
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SC16975 |
P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92 MICROCHIP This enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex’s well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high i...
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P Channel | 16.5V | 500mA | 1.3ohm | TO-92 | Through Hole | 5V | 700mV | 1W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR024NTRPBF
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SC17020 |
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount INFINEON The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device d...
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N Channel | 55V | 17A | 0.065ohm | TO-252AA | Surface Mount | 10V | 2V | 45W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP140NPBF
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SC16983 |
Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole INFINEON The IRFP140NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated
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N Channel | 100V | 33A | 0.052ohm | TO-247AC | Through Hole | 10V | 4V | 94W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMF170XP,115
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SC16740 |
Power MOSFET, P Channel, 20 V, 1 A, 0.175 ohm, SOT-323, Surface Mount NEXPERIA The PMF170XP is a P-channel enhancement mode Field-Effect Transistor with low drain-source on-state resistance and fast switching. • Trench MOSFET technology • Very fast switching
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P Channel | 20V | 1A | 0.175ohm | SOT-323 | Surface Mount | 4.5V | 900mV | 290mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC5614P
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SC16723 |
Power MOSFET, P Channel, 60 V, 3 A, 0.105 ohm, SuperSOT, Surface Mount ONSEMI The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...
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P Channel | 60V | 3A | 0.105ohm | SuperSOT | Surface Mount | 10V | 1.6V | 1.6W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84-7-F
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SC16752 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The BSS84-7-F is a P-channel enhancement-mode MOSFET with solderable matte tin plated terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for hi...
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P Channel | 50V | 130mA | 10ohm | SOT-23 | Surface Mount | 5V | 800mV | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC604P
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SC16981 |
Power MOSFET, P Channel, 20 V, 5.5 A, 0.033 ohm, SuperSOT, Surface Mount ONSEMI The FDC604P is a 1.8V specified P-channel MOSFET uses low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications. • Fast switching speed • High performance Trench technology for ext...
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P Channel | 20V | 5.5A | 0.033ohm | SuperSOT | Surface Mount | 4.5V | 700mV | 1.6W | 6Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC093N15NS5ATMA1
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SC15975 |
Power MOSFET, N Channel, 150V, 87A, 0.0079 Ohm, TDSON, SMD INFINEON • 150V Optima's ™ 5 power transistor • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge(Qtr.) • Qualified according to JEDEC for target applications • Ideal for hig...
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N Channel | 150V | 87A | 0.0079ohm | TDSON | Surface Mount | 10V | 3.8V | 139W | 8Pins | 150°C | OptiMOS 5 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DN2540N5-G
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SC16996 |
Power MOSFET, N Channel, 400 V, 500 mA, 17 ohm, TO-220AB, Through Hole MICROCHIP The DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar ...
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N Channel | 400V | 500mA | 17ohm | TO-220AB | Through Hole | 0V | - | 15W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN2004K-7
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SC16984 |
Power MOSFET, N Channel, 20 V, 630 mA, 0.55 ohm, SOT-23, Surface Mount DIODES INC. The DMN2004K-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS (ON) and yet main...
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N Channel | 20V | 630mA | 0.55ohm | SOT-23 | Surface Mount | 4.5V | 1.6V | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTA4153NT1G
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SC16850 |
Power MOSFET, N Channel, 20 V, 915 mA, 0.127 ohm, SC-75, Surface Mount ONSEMI The NTA4153NT1G is a N-channel Small Signal MOSFET with ESD protected gate. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers. • Low RDS (ON) improving ...
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N Channel | 20V | 915mA | 0.127ohm | SC-75 | Surface Mount | 4.5V | 760mV | 300mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUP90P06-09L-E3
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SC16831 |
Power MOSFET, P Channel, 60 V, 90 A, 0.0074 ohm, TO-220AB, Through Hole VISHAY The SUP90P06-09L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 62°C/W Junction-to-ambient free air thermal resistance • 0.6°C/W Junction-to-case thermal resistance
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P Channel | 60V | 90A | 0.0074ohm | TO-220AB | Through Hole | 10V | 1V | 2.4W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000-D26Z
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SC15741 |
Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92 ONSEMI The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be...
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N Channel | 60V | 200mA | 5ohm | TO-92 | Through Hole | 10V | 2.1V | 400mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002KT1G
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SC15991 |
Power MOSFET, N Channel, 60V, 380mA, 1.19 Ohm, SOT-23, SMD ONSEMI The 2N7002KT1G is a N-channel Small Signal MOSFET offers 60V drain source voltage and 320mA steady state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC and PDA applications. • Low RDS (ON) • S...
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N Channel | 60V | 380mA | 1.19ohm | SOT-23 | Surface Mount | 10V | 2.3V | 420mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9024NTRPBF
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SC16835 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount INFINEON The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 11A | 0.175ohm | TO-252AA | Surface Mount | 10V | 4V | 38W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV48XP,215
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SC16841 |
Power MOSFET, P Channel, 20 V, 3.5 A, 0.048 ohm, SOT-23, Surface Mount NEXPERIA The PMV48XP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • Logic-level...
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P Channel | 20V | 3.5A | 0.048ohm | SOT-23 | Surface Mount | 4.5V | 1V | 510mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18540Q5BT
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SC16687 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A TEXAS INSTRUMENTS The CSD18540Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and isolated converter primary side switch applications. ...
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N Channel | 60V | 100A | 0.0018ohm | VSON | Surface Mount | 10V | 1.9V | 195W | 8Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH108,215
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SC16727 |
Power MOSFET, N Channel, 30 V, 1.9 A, 0.077 ohm, SOT-23, Surface Mount NEXPERIA The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications. • Very fast switching • Logic level compati...
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N Channel | 30V | 1.9A | 0.077ohm | SOT-23 | Surface Mount | 10V | 1.5V | 830mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||