Transistors

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BC109B
BC109B - Transistor, NPN, TO18

SC06718

Transistor, NPN, TO18

MULTICOMP PRO

The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...

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FDN337N
FDN337N - Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

SC06984

Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...

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N Channel 30V 2.2A 0.065ohm
VNP10N07-E
VNP10N07-E - Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

SC11011

Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...

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N Channel 70V 10A 0.1ohm
FZT753
FZT753 - Transistor, PNP, SOT223

SC10981

Transistor, PNP, SOT223

DIODES INC.

FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation

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IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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N Channel - - 0.014ohm
IRFPC50
IRFPC50 - Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

SC06289

Power MOSFET, N Channel, 600 V, 11 A, 0.6 ohm, TO-247AC, Through Hole

VISHAY

• Channel Type : N Channel • Drain Source Voltage Vds : 600V • Continuous Drain Current Id : 11A • Drain Source On State Resistance : 0.6ohm

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N Channel 600V 11A 0.6ohm
FDN360P
FDN360P - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC07006

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

ONSEMI

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited...

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P Channel 30V 2A 0.08ohm
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 500mA 1.2ohm
FQA70N10.
FQA70N10. - Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

SC06322

Power MOSFET, N Channel, 100 V, 70 A, 0.023 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source On State Resistance : 0.023ohm

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N Channel - - 0.023ohm
TIP31C
TIP31C - Transistor, NPN, TO220

SC06756

Transistor, NPN, TO220

MULTICOMP PRO

The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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BDX34C
BDX34C - Darlington Transistor, TO220

SC10997

Darlington Transistor, TO220

STMICROELECTRONICS

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...

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STP60NF06L
STP60NF06L - Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

SC11131

Power MOSFET, N Channel, 60 V, 60 A, 0.014 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in ...

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N Channel 60V 60A 0.014ohm
ZVN2106G
ZVN2106G - Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

SC11051

Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...

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N Channel 60V 700mA 2ohm
IRF740APBF
IRF740APBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC11085

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

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N Channel 400V 10A 0.55ohm
BC856
BC856 - Transistor, PNP SOT23

SC06598

Transistor, PNP SOT23

NXP

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IRFP4668PBF
IRFP4668PBF - Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

SC11169

Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...

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N Channel 200V 130A 0.008ohm
STP10NK60Z
STP10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

SC08225

Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...

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N Channel 600V 10A 0.75ohm
MJ15016G
MJ15016G - Transistor, PNP, TO3

SC09270

Transistor, PNP, TO3

ONSEMI

The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...

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FDN304P
FDN304P - Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

SC07004

Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...

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P Channel 20V 2.4A 0.052ohm
TIP32C
TIP32C - Transistor, PNP, TO220

SC06765

Transistor, PNP, TO220

MULTICOMP PRO

The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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MJ15003
MJ15003 - Transistor, NPN, TO3

SC06779

Transistor, NPN, TO3

MULTICOMP PRO

The MJ15003 from Multicomp Pro are through hole, NPN Complementary silicon power transistors in TO-3 metal can package. This transistor is suitable in high power audio, disk head positioners and other linear applications. • Collector emitter voltage (Vce) ...

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MJ15022G
MJ15022G - Transistor, NPN, TO3

SC06781

Transistor, NPN, TO3

ONSEMI

The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...

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ZVN2110A
ZVN2110A - Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

SC06963

Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole

DIODES INC.

ZVN2110A is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 100V • Continuous drain current at Tamb=25° is 320mA • Pulsed drain current is 6A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 700mW • Drain-source b...

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N Channel 100V 320mA 4ohm
VN10LP
VN10LP - Power MOSFET, N Channel, 60 V, 270 mA, 7.5 ohm, TO-226AA, Through Hole

SC06959

Power MOSFET, N Channel, 60 V, 270 mA, 7.5 ohm, TO-226AA, Through Hole

DIODES INC.

The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity. • AEC-Q101 Qualified • UL94V-0 Flammability rating • Green product

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N Channel 60V 270mA 7.5ohm
IRFP3710PBF.
IRFP3710PBF. - Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

SC11171

Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

INFINEON

The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated

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N Channel 100V 57A 0.025ohm