Transistors
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BC108C
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SC15810 |
Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18 MULTICOMP PRO The BC108C is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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BC557B
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SC09156 |
Transistor, PNP, 45V, 100mA, TO92 MULTICOMP PRO The BC557B is a PNP silicon planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction ...
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2N3904
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SC10960 |
Transistor, NPN, TO92 ONSEMI The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....
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2N3904
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SC15978 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 MULTICOMP PRO The 2N3904 from Multicomp Pro is a through hole, NPN silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence is suitable for switching and amplification. • Co...
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BC547B
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SC08525 |
Transistor, NPN, TO92 ONSEMI The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification. • Collector to emitter breakdown voltage of 45V • Collector to emitter saturation voltage of 250mV • Power dissipation...
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2N3704.
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SC06650 |
Transistor, NPN TO92 MULTICOMP PRO
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BC33725TA
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SC13989 |
Transistor, Bipolar, NPN, 45V, TO92 ONSEMI The BC33725TA is a NPN Epitaxial Silicon Transistor, designed for use in general purpose amplifiers and switches applications. • 200°C/W Thermal Resistance, Junction-to-Ambient • Complement to BC327
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SI2319CDS-T1-GE3
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SC16704 |
Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount VISHAY The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 40V | 4.4A | 0.064ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC32725TA
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SC15770 |
Bipolar (BJT) Single Transistor, Small Signal, PNP, -45V, -800mA, 625mW, TO-92 ONSEMI The BC32725TA is a -45V PNP Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. It is complement to BC337/BC338 transistors. This product is general usage and suitable for many different applications. • -5V Emitter to base voltag...
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TIP120G
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SC15979 |
Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220 ONSEMI The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor
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BSH103,215
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SC19198 |
Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD NEXPERIA The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...
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N Channel | 30V | 850mA | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847B
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SC19196 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC847B is a NPN surface mount silicon planar Epitaxial Transistor. Collector emitter voltage at 45V and power dissipation at 250mW. • 500k/W Junction-to-ambient thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited...
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BSS123,215
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SC19225 |
Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD NEXPERIA The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...
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N Channel | 100V | 150mA | 3.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319DS-T1-E3
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SC19376 |
Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD VISHAY The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...
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P Channel | 40V | 3A | 0.065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSC1845FTA
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SC19265 |
Bipolar (BJT) Single Transistor, NPN, 120V, 50mA, 500mW, TO-226AA ONSEMI The KSC1845FTA is a NPN Epitaxial Silicon Transistor offers 120V collector base voltage and 50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSA992
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SQ2362ES-T1_GE3
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SC19375 |
Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD VISHAY • TrenchFET® power MOSFET • 100% Rg and UIS tested
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N Channel | 60V | 4.3A | 0.125ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF510PBF
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SC15755 |
Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB VISHAY The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...
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N Channel | 100V | 5.6A | 0.54ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP260NPBF
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SC16898 |
N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC INFINEON The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 50A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4171PT1G
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SC16782 |
Power MOSFET, P Channel, 30 V, 3.5 A, 0.05 ohm, SOT-23, Surface Mount ONSEMI The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...
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P Channel | 30V | 3.5A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD243C
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SC15745 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220 MULTICOMP PRO The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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BSS308PEH6327XTSA1
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SC16736 |
Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount INFINEON The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection
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P Channel | 30V | 2A | 0.062ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV304P
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SC16761 |
Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount ONSEMI The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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P Channel | 25V | 460mA | 1.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF256B
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SC15912 |
JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92 ONSEMI The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP3203N3-G
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SC16929 |
Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 30V | 650mA | 0.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J111
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SC12586 |
JFET Transistor, TO-92, 150 °C ONSEMI The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation
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N Channel | - | - | - |