Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBC40APBF
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SC16969 |
Power MOSFET, N Channel, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Through Hole VISHAY The IRFBC40APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications. • Low gate charge Qg results in simple drive requirement • Impro...
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1+ €1.3566 (€1.67) 10+ €1.0829 (€1.33) 100+ €0.8687 (€1.07) |
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N Channel | 600V | 6.2A | 1.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLB4132PBF
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SC17012 |
Power MOSFET, N Channel, 30 V, 78 A, 0.0025 ohm, TO-220AB, Through Hole INFINEON HEXFET® Power MOSFET in TO-220AB package optimized for UPS/inverter applications. • Very low RDS(on) at 4.5V VGS • Ultra-low gate impedance • Fully characterized avalanche voltage and current
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1+ €0.7616 (€0.94) 10+ €0.4641 (€0.57) 100+ €0.4165 (€0.51) |
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N Channel | 30V | 78A | 0.0025ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301CDS-T1-E3
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SC16887 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount VISHAY Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch. • TrenchFET® Power MOSFET • Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C) • Gate-source threshold voltage range from -0.4 to 1V (VDS =...
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1+ €0.3808 (€0.47) 10+ €0.2618 (€0.32) 100+ €0.2023 (€0.25) |
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P Channel | 20V | 3.1A | 0.11ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD20P06LT4G
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SC16990 |
Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes. • Low gate charge for fast swi...
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1+ €0.4522 (€0.56) 10+ €0.3689 (€0.45) 100+ €0.3094 (€0.38) |
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P Channel | 60V | 15.5A | 0.143ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7850DP-T1-E3
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SC16843 |
Power MOSFET, N Channel, 60 V, 10.3 A, 0.022 ohm, PowerPAK SO, Surface Mount VISHAY The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications. • ±20V Gate-source voltage • Ha...
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N Channel | 60V | 10.3A | 0.022ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557BTA
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SC15789 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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5+ €0.0714 (€0.09) 50+ €0.0476 (€0.06) 250+ €0.0357 (€0.04) |
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BSS126H6327XTSA2
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SC16946 |
Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount INFINEON The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also sui...
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1+ €0.2737 (€0.34) 10+ €0.1785 (€0.22) 100+ €0.1428 (€0.18) |
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N Channel | 600V | 21mA | 280ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTC114YT,215
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SC15941 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 47 kohm NEXPERIA The PDTC114YT is a 10 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP complem...
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1+ €0.1547 (€0.19) 10+ €0.0595 (€0.07) 100+ €0.0357 (€0.04) |
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DMN6075S-7
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SC17019 |
SMD N Channel Power MOSFET, 60V, 2A, 0.069 Ohm, SOT-23 DIODES INC. This new generation MOSFET is designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications • Suitable for DC/DC converters, Power management functions and ba...
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1+ €0.1666 (€0.20) 10+ €0.0952 (€0.12) 100+ €0.0595 (€0.07) |
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N Channel | 60V | 2A | 0.085ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A,215
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SC16040 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 600mA, 250mW, SOT-23, SMD NEXPERIA The MMBT2222A is a NPN Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • High current • Low voltage • PNP complement is PMBT2907A • 7C Marking code
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1+ €0.119 (€0.15) 10+ €0.0595 (€0.07) 100+ €0.0357 (€0.04) |
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CSD18504Q5A
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SC16683 |
SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A, TEXAS INSTRUMENTS The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...
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1+ €0.952 (€1.17) 10+ €0.7973 (€0.98) |
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N Channel | 40V | 50A | 0.0053ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BLT1G.
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SC16025 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD r...
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SI2369DS-T1-GE3
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SC16757 |
Power MOSFET, P Channel, 30 V, 7.6 A, 0.024 ohm, SOT-23, Surface Mount VISHAY The SI2369DS-T1-GE3 is a P-Channel 30V Power MOSFET with ±20V gate source voltage. It works on Trench MOSFET® technology. • 100% Rg Tested • Halogen-free
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P Channel | 30V | 7.6A | 0.024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN180N15P
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SC17025 |
MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V IXYS SEMICONDUCTOR The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge a...
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1+ €18.6473 (€22.94) 3+ €16.422 (€20.20) 10+ €14.4347 (€17.75) |
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N Channel | 150V | 150A | 0.011ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BK,215
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SC15984 |
Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD NEXPERIA The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...
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N Channel | 60V | 350mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75344G3
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SC16989 |
Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole ONSEMI The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...
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N Channel | 55V | 75A | 0.0065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN5630
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SC16780 |
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount ONSEMI The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...
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N Channel | 60V | 1.7A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003AINSR
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SC18106 |
High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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BC807-40LT1G
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SC19261 |
Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC807-40LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a surface-mount package. It offers ESD protection, polarity reversal protection, data line protection, inductive load protection and...
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2N6058
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SC20273 |
Silicon Darlingtion Complimentary Power Transistor, NPN, 80V, 12A, TO-3 MULTICOMP PRO
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MP001168
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SC21697 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 5W, TO-39 MULTICOMP PRO
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FQP17P10
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SC08207 |
Power MOSFET, P Channel, 100 V, 16.5 A, 0.19 ohm, TO-220, Through Hole ONSEMI The FQP17P10 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high av...
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P Channel | 100V | 16.5A | 0.19ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||