Transistors

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PDTC123JT,215
PDTC123JT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

SC21428

 
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RoHS

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

NEXPERIA

The PDTC123JT is a 2.2 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount device plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP...

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BC817-25
BC817-25 - Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount

SC21379

 
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Data Sheet
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RoHS

Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount

MULTICOMP PRO

The BC817-25 is a general purpose NPN Transistor with high collector current and high current gain. Designed for use in AF applications. • Low collector-emitter saturation voltage • Complement to BC807 • Multicomp Pro products are rated 4.6 out of 5 stars ...

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PMV30UN2R
PMV30UN2R - Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount

SC21452

 
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+
RoHS

Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...

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N Channel 20V 5.4A 0.024ohm
BC817
BC817 - Transistor, NPN SOT23

SC06580

Transistor, NPN SOT23

NXP

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BC807-25
BC807-25 - Transistor, PNP, SOT23

SC06612

Transistor, PNP, SOT23

NXP

The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance

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BFS17PE6327HTSA1
BFS17PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

SC11003

Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

INFINEON

The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.

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BC846
BC846 - Transistor, NPN SOT23

SC06582

Transistor, NPN SOT23

NXP

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MMUN2216LT1G
MMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

SC10967

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm

ONSEMI

The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...

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BC807-25LVL
BC807-25LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15933

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

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IXFN80N50
IXFN80N50 - MOSFET Transistor, N Channel, 80A, 10V,

SC17017

MOSFET Transistor, N Channel, 80A, 10V,

IXYS SEMICONDUCTOR

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...

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N Channel 500V 80A 0.055ohm
BC817K-40VL
BC817K-40VL - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

SC15928

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

NEXPERIA

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FQU17P06
FQU17P06 - Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

SC11064

Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole

ONSEMI

The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...

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P Channel 60V 12A 0.11ohm
BDV65BG
BDV65BG - Darlington Transistor, SOT93

SC06873

Darlington Transistor, SOT93

ONSEMI

The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. ...

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BC860C
BC860C - Transistor, PNP SOT23

SC06603

Transistor, PNP SOT23

NXP

The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850

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FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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N Channel 60V 30A 0.031ohm
2N4870.
2N4870. - Unijunction Transistor, 1.5A, 1µA, 5mA, TO-92

SC15371

Unijunction Transistor, 1.5A, 1µA, 5mA, TO-92

MULTICOMP PRO

The 2N4870 is a PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well as thyristor trigger circuits. • Power dissipation(Pd = 300mW) • Multicomp products are rated 4.6 out of 5 stars • 12 month limited warranty *...

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BUV48A
BUV48A - Transistor, NPN, TO247

SC06801

Transistor, NPN, TO247

MOSPEC

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MJL1302AG
MJL1302AG - Transistor, PNP, TO264

SC06828

Transistor, PNP, TO264

ONSEMI

The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...

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IRF2804PBF
IRF2804PBF - Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

SC08252

Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole

INFINEON

The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...

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N Channel 40V 280A 0.0023ohm
IRFP240PBF
IRFP240PBF - Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

SC10643

Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole

VISHAY

The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 200V 20A 0.18ohm
MMUN2211LT1G
MMUN2211LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio)

SC19267

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10kohm, 1 (Ratio)

ONSEMI

The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single trans...

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SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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N Channel 650V 20.7A 0.19ohm
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 320mA 0.9ohm
MJE13007
MJE13007 - Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

SCMJE13007

Bipolar (BJT) Single Transistor, NPN, 400V, 8A, 80W

ONSEMI

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BCW30
BCW30 - Transistor, PNP SOT23

SC06605

Transistor, PNP SOT23

NXP

The BCW30 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW31 and BCW32 • C2 Marking code

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