Transistors

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BC847A
BC847A - Transistor, NPN SOT23

SC06586

Transistor, NPN SOT23

NXP

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IRFP4568PBF
IRFP4568PBF - Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole

SC11170

Power MOSFET, N Channel, 150 V, 171 A, 0.0048 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4568PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 150V 171A 0.0048ohm
BCW60B
BCW60B - Transistor, NPN SOT23

SC06591

Transistor, NPN SOT23

NXP

The BCW60B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • AB marking code

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IRFP4110PBF
IRFP4110PBF - Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole

SC11168

Power MOSFET, N Channel, 100 V, 120 A, 0.0037 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 120A 0.0037ohm
ZVN4310A
ZVN4310A - Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

SC06969

Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5Ω resistance and 850mW power dissipation.

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N Channel 100V 900mA 0.65ohm
IRFD120PBF
IRFD120PBF - Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

SC07021

Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole

VISHAY

The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which c...

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N Channel 100V 1.3A 0.27ohm
FQP19N20
FQP19N20 - Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

SC08208

Power MOSFET, N Channel, 200 V, 19.4 A, 0.12 ohm, TO-220, Through Hole

ONSEMI

The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high av...

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N Channel 200V 19.4A 0.12ohm
IRFU9014PBF
IRFU9014PBF - Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

SC11069

Power MOSFET, P Channel, 60 V, 5.6 A, 0.5 ohm, TO-251AA, Through Hole

VISHAY

The IRFU9014PBF is a P-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching and ease of paralleling

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P Channel 60V 5.6A 0.5ohm
IRFP23N50LPBF
IRFP23N50LPBF - Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

SC11180

Power MOSFET, N Channel, 500 V, 23 A, 0.235 ohm, TO-247AC, Through Hole

VISHAY

The IRFP23N50LPBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. Superfast body diode eliminates the need for external diodes in ZVS applications. Suitable for use in zero voltage switching SMPS, telecom and se...

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N Channel 500V 23A 0.235ohm
FQA170N06.
FQA170N06. - Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

SC06320

Power MOSFET, N Channel, 60 V, 170 A, 0.0056 ohm, TO-3P, Through Hole

ONSEMI

• Channel Type : N Channel • Drain Source On State Resistance : 0.0056ohm

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N Channel - - 0.0056ohm
2N4033MC
2N4033MC - Transistor, PNP TO39

SC06641

Transistor, PNP TO39

MULTICOMP PRO

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STW20NM50FD
STW20NM50FD - Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

SC11175

Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologi...

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N Channel 500V 20A 0.25ohm
FZT658
FZT658 - Transistor, NPN, SOT223

SC10987

Transistor, NPN, SOT223

DIODES INC.

The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. • UL94V-0 Flammability rating • 1A Peak pulse current • hFE<gt/>40 Specified up to 200mA fo...

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TTIP41C
TTIP41C - Transistor, NPN, TO220

SC06757

Transistor, NPN, TO220

MULTICOMP PRO

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BC848CLT1G
BC848CLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

SC14981

Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE

ONSEMI

The BC848CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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FDP5800
FDP5800 - Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole

SC16966

Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole

ONSEMI

The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...

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N Channel 60V 80A 0.0046ohm
MMBT2222ALT1G
MMBT2222ALT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

SC16021

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications. • Halogen-free/BFR-free • AEC-Q101 Qualified and PPAP Capable

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CSD19537Q3T
CSD19537Q3T - SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

SC16995

SMD N Channel Power MOSFET, 100V, 50A, 0.0121 Ohm, VSON

TEXAS INSTRUMENTS

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.0121ohm

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N Channel 100V 50A 0.0121ohm
2N3773G
2N3773G - Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA

SC15818

Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA

ONSEMI

The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters o...

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2N1711
2N1711 - Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

SC15750

Bipolar (BJT) Single Transistor, NPN, 50V, 500mA, 3W, TO-39

MULTICOMP PRO

Silicon planar epitaxial NPN transistor for use in high performance amplifier, oscillator and switching circuits. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers woul...

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BC846BDW1T1G
BC846BDW1T1G - Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

SC16123

Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

ONSEMI

The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free

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BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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N Channel 20V 2.3A 0.041ohm
BSS84DW-7-F
BSS84DW-7-F - Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

SC16803

Dual MOSFET, P Channel, 50V, 130mA, 10 Ohm, SOT-363, SMD

DIODES INC.

The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications. • L...

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P Channel - - -
ZXM61N02F
ZXM61N02F - Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

SC16913

Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61N02F is an N-channel Enhancement Mode MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage applications. • Low on-resistance • Fast sw...

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N Channel 20V 1.7A 0.18ohm
ZXMP6A17E6TA
ZXMP6A17E6TA - Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

SC16832

Power MOSFET, P Channel, 60 V, 3 A, 0.125 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMP6A17E6TA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain sup...

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P Channel 60V 3A 0.125ohm