Semiconductors - Discretes
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Reverse Recovery Time | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT54CFILM
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SC11318 |
Small Signal Schottky Diode, Dual Common Cathode, 30 V, 300 mA, 900 mV, 1 A, 150 °C STMICROELECTRONICS The BAT54CFILM is a 3-pin 40V surface-mount small signal Schottky Diode with dual common cathode configuration. It accepts low forward and reverse recovery times, low conduction and reverse losses and negligible switching losses. • Extremely fast switching...
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Dual Common Cathode | 30V | 300mA | 900mV | 1A | 150°C | SOT-23 | 3Pins | 5ns | Surface Mount | BAT54 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-25RIA80
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SC11504 |
Thyristor, 25A, 800V, TO48 VISHAY The VS-25RIA80 is a 25A stud version medium power Phase Control Thyristor designed and qualified for industrial and consumer level. • Improved glass passivation for high reliability and exceptional stability at high temperature • High di/dt and dV/dt capab...
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1+ €15.7675 (€19.39) 10+ €11.7453 (€14.45) 50+ €9.2225 (€11.34) |
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- | 800V | 25A | - | - | 125°C | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17PE6327HTSA1
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SC11003 |
Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23 INFINEON The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAV199E6327HTSA1
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SC11237 |
Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A INFINEON The BAV199 from Infineon is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications. • Automotive grade AEC-Q101 qualified • Maxi...
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Dual Series | 85V | 200mA | 1.25V | 4.5A | 150°C | SOT-23 | 3Pins | 1.5µs | Surface Mount | BAV199 Series | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54AFILM
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SC11323 |
Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 400 mV, 600 mA, 150 °C STMICROELECTRONICS The BAT54AFILM is a surface mount Small Signal Schottky Diode featuring extremely fast switching, low capacitance, low forward and reverse recovery times. • Low conduction and reverse losses • Negligible switching losses • ECOPACK®2 compliant component • 1...
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Dual Common Anode | 30V | 200mA | 400mV | 600mA | 150°C | SOT-23 | 3Pins | 5ns | Surface Mount | BAT54 Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC06582 |
Transistor, NPN SOT23 NXP • Operating Temperature Max : 150°C • No. of Pins : 3Pins
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2216LT1G
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SC10967 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm ONSEMI The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a s...
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- | - | - | - | - | 150°C | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BYW56-TAP
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SC11348 |
Standard Recovery Diode, 1 kV, 2 A, Single, 1 V, 4 µs, 50 A VISHAY The BYW56-TAP is a standard Avalanche Sinterglass Diode with plated axial leads terminals and colour band denotes cathode end polarity. Solderable terminals as per MIL-STD-750, method 2026 standard. Controlled avalanche characteristics and glass passivated...
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Single | 1kV | 2A | 1V | 50A | 175°C | SOD-57 | 2Pins | 4µs | - | BYW56 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RS1M+
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SC15535 |
Standard Recovery Diode, 1 kV, 1 A, Single, 1.3 V, 500 ns, 30 A MULTICOMP PRO The RS1M is a Surface-mount Diode with moulded plastic case and pure tin-plated lead-free terminals. • Polarity is indicated by cathode band • Glass-passivated junction chip • Built-in strain-relief, ideal for automated placement • Fast switching for high ...
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Single | 1kV | 1A | 1.3V | 30A | 150°C | DO-214AC (SMA) | 2Pins | 500ns | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR160
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SC15280 |
Schottky Rectifier, 60 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 700 mV MULTICOMP PRO SR160 is a Schottky rectifier designed for efficient power conversion. It features a 60V reverse voltage rating and a 1A forward current capacity, with a low forward voltage drop of 700mV. The rectifier comes in a DO-41 (DO-204AL) package with 2 pins, maki...
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Single | 60V | 1A | 700mV | 30A | 150°C | DO-41 (DO-204AL) | 2Pins | - | Through Hole | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25LVL
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SC15933 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Operating Temperature Max : 150°C • No. of Pins : 3Pins • Product Range : BC807L • Qualification : AEC-Q101
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- | - | - | - | - | 150°C | - | 3Pins | - | - | BC807L | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN80N50
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SC17017 |
MOSFET Transistor, N Channel, 80A, 10V, IXYS SEMICONDUCTOR The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier •...
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- | - | - | - | - | 150°C | - | 4Pins | - | - | HiPerFET Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MAC97A6,412
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SC17081 |
4Q Triac, 400V, 600mA, TO-92, 7mA, 2V, 5W WEEN SEMICONDUCTORS The MAC97A6,412 is a planar passivated very sensitive gate 4-quadrant TRIAC for general purpose low power phase control and low power switching. • Direct Interfacing to Logic Level ICs • Direct Interfacing to Low Power Gate Drivers and Microcontrollers • H...
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1+ €0.4165 (€0.51) 10+ €0.2737 (€0.34) 100+ €0.1071 (€0.13) |
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- | - | - | - | - | 125°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817K-40VL
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SC15928 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA • Operating Temperature Max : 150°C • No. of Pins : 3Pins • Product Range : BC817K • Qualification : AEC-Q101
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- | - | - | - | - | 150°C | - | 3Pins | - | - | BC817K | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQU17P06
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SC11064 |
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251AA, Through Hole ONSEMI The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV65BG
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SC06873 |
Darlington Transistor, SOT93 ONSEMI The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC860C
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SC06603 |
Transistor, PNP SOT23 NXP The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQP30N06
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SC16931 |
Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole ONSEMI The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N4870.
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SC15371 |
Unijunction Transistor, 1.5A, 1µA, 5mA, TO-92 MULTICOMP PRO The 2N4870 is a PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well as thyristor trigger circuits. • Power dissipation(Pd = 300mW) • Multicomp products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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- | - | - | - | - | 125°C | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUV48A
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SC06801 |
Transistor, NPN, TO247 MOSPEC • No. of Pins : 3Pins
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- | - | - | - | - | - | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4001
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SC17772 |
Standard Recovery Diode, 50 V, 1 A, Single, 1.1 V, 30 A AMERICAN POWER DEVICES The 1N4001 is a silicon Power Rectifier Diode with moulded plastic case and copper, tin-plated lead. • High Current Capability • Low Leakage • Low Forward Voltage • High Surge Capability
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Single | 50V | 1A | 1.1V | 30A | 175°C | DO-41 (DO-204AL) | 2Pins | - | - | 1N4001 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJL1302AG
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SC06828 |
Transistor, PNP, TO264 ONSEMI The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...
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1+ €4.1888 (€5.15) 10+ €3.5938 (€4.42) 100+ €3.1416 (€3.86) |
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2804PBF
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SC08252 |
Power MOSFET, N Channel, 40 V, 280 A, 0.0023 ohm, TO-220AB, Through Hole INFINEON The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP240PBF
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SC10643 |
Power MOSFET, N Channel, 200 V, 20 A, 0.18 ohm, TO-247AC, Through Hole VISHAY The IRFP240PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMEG3030EP,115
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SC17556 |
Schottky Rectifier, 30 V, 3 A, Single, SOD-128, 2 Pins, 360 mV NEXPERIA The PMEG3030EP is a planar maximum efficiency general application (MEGA) Schottky barrier Rectifier Diode with an integrated guard ring for stress protection. The Low VF Schottky rectifier offers extremely low forward voltage drop during operation, resulti...
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Single | 30V | 3A | 360mV | 50A | 150°C | SOD-128 | 2Pins | - | Surface Mount | PMEG3 | - |