Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJL21194G
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SC06819 |
Transistor, NPN, TO264 ONSEMI The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...
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ZVN3310A
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SC06965 |
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole DIODES INC. The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
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N Channel | 100V | 200mA | 10ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ44NPBF
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SC08251 |
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole INFINEON The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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1+ €1.3447 (€1.65) 25+ €1.1186 (€1.38) 100+ €0.9639 (€1.19) |
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N Channel | 55V | 41A | 0.0175ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD677
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SC09211 |
Darlington Transistor, TO126 MULTICOMP PRO The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...
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ZTX451
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SC10972 |
Transistor, NPN, E-Line DIODES INC. The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range
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SPD04N80C3
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SC11153 |
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm
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N Channel | 800V | 4A | 1.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP36NF06L
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SC11127 |
Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole STMICROELECTRONICS • N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application
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1+ €0.6783 (€0.83) 25+ €0.6426 (€0.79) 100+ €0.6307 (€0.78) |
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N Channel | 60V | 30A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC109C
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SC06719 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...
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IRF9620
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SCIRF9620 |
Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole VISHAY • Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm
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1+ €1.2495 (€1.54) 25+ €0.8925 (€1.10) 100+ €0.5712 (€0.70) |
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P Channel | 200V | 3.5A | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NDS7002A
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SC06992 |
Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount ONSEMI The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...
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N Channel | 60V | 280mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP10NK60Z
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SC08225 |
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole STMICROELECTRONICS The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...
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1+ €1.309 (€1.61) 25+ €1.0234 (€1.26) 100+ €0.833 (€1.02) |
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N Channel | 600V | 10A | 0.75ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ15016G
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SC09270 |
Transistor, PNP, TO3 ONSEMI The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...
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TIP32C
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SC06765 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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IRFP4668PBF
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SC11169 |
Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole INFINEON The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...
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N Channel | 200V | 130A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN2106G
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SC11051 |
Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount DIODES INC. The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...
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N Channel | 60V | 700mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF740APBF
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SC11085 |
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole VISHAY The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...
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N Channel | 400V | 10A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856
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SC06598 |
Transistor, PNP SOT23 NXP
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FDN304P
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SC07004 |
Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount ONSEMI The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...
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P Channel | 20V | 2.4A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF259MC
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SC06649 |
Transistor, NPN TO39 MULTICOMP PRO
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FDN358P
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SC07005 |
Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount ONSEMI The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...
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P Channel | 30V | 1.6A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RFP12N10L
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SC11126 |
Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole ONSEMI The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...
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N Channel | 100V | 12A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT753
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SC10981 |
Transistor, PNP, SOT223 DIODES INC. FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation
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VNP10N07-E
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SC11011 |
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole STMICROELECTRONICS The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...
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N Channel | 70V | 10A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4710PBF
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SC11091 |
Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole INFINEON The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...
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N Channel | - | - | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP50G
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SC06808 |
Transistor, NPN, TO220 ONSEMI The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...
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