Transistors

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MJL21194G
MJL21194G - Transistor, NPN, TO264

SC06819

Transistor, NPN, TO264

ONSEMI

The MJL21194G is a NPN complementary Bipolar Power Transistor, utilize Perforated Emitter technology. Designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21193G • Excellent Gain Linearity • Total Ha...

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ZVN3310A
ZVN3310A - Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole

SC06965

Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.

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N Channel 100V 200mA 10ohm
IRFZ44NPBF
IRFZ44NPBF - Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

SC08251

Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 41A 0.0175ohm
BD677
BD677 - Darlington Transistor, TO126

SC09211

Darlington Transistor, TO126

MULTICOMP PRO

The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...

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ZTX451
ZTX451 - Transistor, NPN, E-Line

SC10972

Transistor, NPN, E-Line

DIODES INC.

The ZTX451 is a NPN silicon planar medium power Bipolar Transistor offers 1A continuous collector current and 80V collector-base voltage. • -55 to 200°C Operating temperature range

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SPD04N80C3
SPD04N80C3 - Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

SC11153

Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-252 (DPAK), Surface Mount

INFINEON

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 4A • Drain Source On State Resistance : 1.1ohm

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N Channel 800V 4A 1.1ohm
STP36NF06L
STP36NF06L - Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

SC11127

Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

STMICROELECTRONICS

• N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Low on-resistance and rugged avalanche characteristics • Used for switching application

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N Channel 60V 30A 0.032ohm
BC109C
BC109C - Transistor, NPN, TO18

SC06719

Transistor, NPN, TO18

MULTICOMP PRO

The BC109C from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic...

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IRF9620
IRF9620 - Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole

SCIRF9620

Power MOSFET, P Channel, 200 V, 3.5 A, 1.5 ohm, TO-220AB, Through Hole

VISHAY

• Channel Type : P Channel • Drain Source Voltage Vds : 200V • Continuous Drain Current Id : 3.5A • Drain Source On State Resistance : 1.5ohm

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P Channel 200V 3.5A 1.5ohm
NDS7002A
NDS7002A - Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

SC06992

Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

ONSEMI

The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most application...

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N Channel 60V 280mA 2ohm
STP10NK60Z
STP10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

SC08225

Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...

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N Channel 600V 10A 0.75ohm
MJ15016G
MJ15016G - Transistor, PNP, TO3

SC09270

Transistor, PNP, TO3

ONSEMI

The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...

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TIP32C
TIP32C - Transistor, PNP, TO220

SC06765

Transistor, PNP, TO220

MULTICOMP PRO

The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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IRFP4668PBF
IRFP4668PBF - Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

SC11169

Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...

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N Channel 200V 130A 0.008ohm
ZVN2106G
ZVN2106G - Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

SC11051

Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...

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N Channel 60V 700mA 2ohm
IRF740APBF
IRF740APBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC11085

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

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N Channel 400V 10A 0.55ohm
BC856
BC856 - Transistor, PNP SOT23

SC06598

Transistor, PNP SOT23

NXP

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FDN304P
FDN304P - Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

SC07004

Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...

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P Channel 20V 2.4A 0.052ohm
BF259MC
BF259MC - Transistor, NPN TO39

SC06649

Transistor, NPN TO39

MULTICOMP PRO

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FDN358P
FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

SC07005

Power MOSFET, P Channel, 30 V, 1.6 A, 0.2 ohm, SOT-23, Surface Mount

ONSEMI

The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power ve...

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P Channel 30V 1.6A 0.2ohm
RFP12N10L
RFP12N10L - Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

SC11126

Power MOSFET, N Channel, 100 V, 12 A, 0.2 ohm, TO-220AB, Through Hole

ONSEMI

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a ...

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N Channel 100V 12A 0.2ohm
FZT753
FZT753 - Transistor, PNP, SOT223

SC10981

Transistor, PNP, SOT223

DIODES INC.

FZT753 is a 100V, 2A PNP silicon planar medium power transistor in a 4 pin SOT-223 package. • Low saturation voltage • Excellent hFE specified up to 2A • Complementary NPN type FZT653 • 2W power dissipation

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VNP10N07-E
VNP10N07-E - Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

SC11011

Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole

STMICROELECTRONICS

The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz application...

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N Channel 70V 10A 0.1ohm
IRFB4710PBF
IRFB4710PBF - Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

SC11091

Power MOSFET, N Channel, 100 V, 75 A, 0.014 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. • Fully characterized capacitance including effective COSS to simplify design • Fu...

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N Channel - - 0.014ohm
TIP50G
TIP50G - Transistor, NPN, TO220

SC06808

Transistor, NPN, TO220

ONSEMI

The TIP50G is a 400V Silicon NPN Bipolar High Voltage Power Transistor designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications. • Collector-base voltage (Vcbo = 500V) • Emitter-base voltage (Vcbo...

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