Transistors
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FDN337N
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SC06984 |
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount ONSEMI The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistanc...
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N Channel | 30V | 2.2A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC109B
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SC06718 |
Transistor, NPN, TO18 MULTICOMP PRO The BC109B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...
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ULN2002A
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SC08600 |
Darlington Array 7 NPN, 2002, DIP16 STMICROELECTRONICS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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FZT751
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SC10976 |
Transistor, PNP, SOT223 DIODES INC. The FZT751 is a PNP high performance Transistor with tin plated terminals and UL94V-0-flame rated moulded plastic case. Solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT651 • Level-1 per J-STD-020 moisture sensitivity • Gree...
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NTF3055L108T1G
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SC11060 |
Power MOSFET, N Channel, 60 V, 3 A, 0.12 ohm, SOT-223, Surface Mount ONSEMI The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 3A | 0.12ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF630NPBF
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SC11083 |
Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Through Hole INFINEON The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Fully avalanche rated • Dynamic dV/dt rating •...
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1+ €1.3804 (€1.70) 25+ €1.1305 (€1.39) 100+ €0.952 (€1.17) 250+ €0.8211 (€1.01) |
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N Channel | 200V | 9.3A | 0.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJE5731AG
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SC06809 |
Transistor, PNP TO220 ONSEMI The MJE5731AG is a PNP Bipolar Power Transistor designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • PNP complements to the TIP47 thru TIP50 series
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1+ €1.1781 (€1.45) 10+ €1.0234 (€1.26) 100+ €0.8806 (€1.08) 500+ €0.7378 (€0.91) |
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IRF2907ZPBF
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SC08253 |
Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-220, Through Hole INFINEON The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...
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1+ €2.8441 (€3.50) 25+ €2.5466 (€3.13) 100+ €2.2729 (€2.80) |
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N Channel | - | - | 0.0045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3310F
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SC07001 |
Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount DIODES INC. The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...
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N Channel | 100V | 100mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SMBT3904
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SC10623 |
Transistor, NPN, SOT23 INFINEON
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IRF9520PBF
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SC11123 |
Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole VISHAY The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 6A | 0.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HUF75339P3
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SC12748 |
Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole ONSEMI The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...
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N Channel | 55V | 75A | 0.012ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3415PBF
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SC11109 |
Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole INFINEON The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...
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N Channel | 150V | 37A | 0.042ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205ZPBF
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SC11149 |
Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...
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N Channel | 55V | 110A | 0.0065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW17N80C3
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SC11162 |
Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole INFINEON The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature
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N Channel | 800V | 17A | 0.29ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT653
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SC10978 |
Transistor, NPN, SOT223 DIODES INC. The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...
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1+ €0.595 (€0.73) 25+ €0.4641 (€0.57) 100+ €0.3689 (€0.45) |
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2N5551
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SC06652 |
Si-N 180V 0.6A 0.31W TO92 Q14 ONSEMI The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...
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D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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BU406
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SC06796 |
Transistor, NPN, TO220 MULTICOMP PRO The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...
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BD680
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SC06882 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency
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NDT2955
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SC11042 |
Power MOSFET, P Channel, 60 V, 2.5 A, 0.3 ohm, SOT-223, Surface Mount ONSEMI The NDT2955 is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using high voltage trench process and suitable for power management applications. • High density cell design for extremely lo...
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P Channel | 60V | 2.5A | 0.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU426A
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SC06797 |
Transistor, NPN, TO218 MULTICOMP PRO The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...
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BD135
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SC10992 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Complement to BD136 • 0.5A Base current • 10°C/W Junction-to-case thermal r...
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IRLZ34NPBF
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SC11125 |
Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole INFINEON The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...
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N Channel | 55V | 27A | 0.035ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D44H8G
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SC06751 |
Transistor, NPN, TO220 ONSEMI The D44H8G is a 10A NPN bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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