Transistors

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2N2905A
2N2905A - Transistor, PNP, TO39

SC06713

Transistor, PNP, TO39

MULTICOMP PRO

General purpose silicon planar PNP switching transistor. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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IRLU024NPBF
IRLU024NPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

SC11074

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

INFINEON

The IRLU024NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel 55V 17A 0.065ohm
SPA20N60C3
SPA20N60C3 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

SC11115

Power MOSFET, N Channel, 650 V, 20.7 A, 0.16 ohm, TO-220AB, Through Hole

INFINEON

The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 650V 20.7A 0.16ohm
IRF830APBF
IRF830APBF - Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

SC11087

Power MOSFET, N Channel, 500 V, 5 A, 1.4 ohm, TO-220AB, Through Hole

VISHAY

The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching. • Dyn...

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N Channel 500V 5A 1.4ohm
BSS138....
BSS138.... - MOSFET, N, SOT23

SC06981

MOSFET, N, SOT23

ONSEMI

• Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 220mA

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- 50V 220mA -
IRF840APBF
IRF840APBF - Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

SC11081

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

VISHAY

The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness. • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • ±30V Gate-source voltage

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N Channel 500V 8A 0.85ohm
IRLML2502PBF
IRLML2502PBF - Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount

SC06987

Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to p...

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N Channel 20V 4.2A 0.045ohm
FQP3N80C
FQP3N80C - Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole

SC11099

Power MOSFET, N Channel, 800 V, 3 A, 4 ohm, TO-220, Through Hole

ONSEMI

The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and with...

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N Channel 800V 3A 4ohm
SPA11N80C3
SPA11N80C3 - Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

SC11117

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220FP, Through Hole

INFINEON

The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...

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N Channel 800V 11A 0.39ohm
BC807-16
BC807-16 - Transistor, PNP SOT23

SC06596

Transistor, PNP SOT23

NXP

The BC807 series 500mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC817 NPN complement

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ZVP2106A
ZVP2106A - Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole

SC06973

Power MOSFET, P Channel, 60 V, 280 mA, 4 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current. • ±20V Gate Source Voltage

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P Channel 60V 280mA 4ohm
IRF5305PBF
IRF5305PBF - Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

SC08218

Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

INFINEON

The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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P Channel 55V 31A 0.06ohm
BC108
BC108 - Transistor, NPN, TO18

SC06646

Transistor, NPN, TO18

MULTICOMP PRO

The BC108 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...

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IRFP22N50APBF
IRFP22N50APBF - Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole

SC11094

Power MOSFET, N Channel, 500 V, 22 A, 0.23 ohm, TO-247AC, Through Hole

VISHAY

The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. • Simple drive requirements • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current

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N Channel 500V 22A 0.23ohm
ZVN0545A
ZVN0545A - Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole

SC06961

Power MOSFET, N Channel, 450 V, 90 mA, 50 ohm, E-Line, Through Hole

DIODES INC.

The ZVN0545A is a N-channel enhancement-mode Vertical DMOSFET.

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N Channel 450V 90mA 50ohm
BCX38C
BCX38C - Darlington Transistor, E-Line

SC06835

Darlington Transistor, E-Line

DIODES INC.

The BCX38C is a NPN silicon planar medium-power Darlington Transistor offers 80V collector-base voltage and 800mA continuous collector current. • -55 to 200°C Operating temperature range

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NDS352AP
NDS352AP - Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount

SC11034

Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...

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P Channel 30V 900mA 0.25ohm
FDN338P
FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount

SC11041

Power MOSFET, P Channel, 20 V, 1.6 A, 0.13 ohm, SOT-23, Surface Mount

ONSEMI

The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...

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P Channel 20V 1.6A 0.13ohm
BD437
BD437 - Transistor, NPN, TO126

SC09319

Transistor, NPN, TO126

STMICROELECTRONICS

The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • PNP complementary type is BD438

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IRL520NPBF
IRL520NPBF - Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

SC11136

Power MOSFET, N Channel, 100 V, 10 A, 0.18 ohm, TO-220AB, Through Hole

INFINEON

The IRL520NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated •...

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N Channel - - 0.18ohm
BC337-25
BC337-25 - Si-N 50V 0.625W 150MHz

SC06663

Si-N 50V 0.625W 150MHz

MULTICOMP PRO

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2N7002
2N7002 - MOSFET, N, SOT23

SC06978

MOSFET, N, SOT23

NXP

• Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 300mA

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- 60V 300mA -
MJ15003
MJ15003 - Transistor, NPN, TO3

SC06779

Transistor, NPN, TO3

MULTICOMP PRO

The MJ15003 from Multicomp Pro are through hole, NPN Complementary silicon power transistors in TO-3 metal can package. This transistor is suitable in high power audio, disk head positioners and other linear applications. • Collector emitter voltage (Vce) ...

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MJ15022G
MJ15022G - Transistor, NPN, TO3

SC06781

Transistor, NPN, TO3

ONSEMI

The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 350V) • Emitter-base voltage ...

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TIP3055
TIP3055 - Transistor, NPN, TO218

SC06790

Transistor, NPN, TO218

STMICROELECTRONICS

The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. • Collector to e...

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