Transistors

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FDN359AN
FDN359AN - Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SOT-23, Surface Mount

SC06985

Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SOT-23, Surface Mount

ONSEMI

The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and batter...

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N Channel 30V 2.7A 0.046ohm
NDT452AP
NDT452AP - Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount

SC11045

Power MOSFET, P Channel, 30 V, 5 A, 0.065 ohm, SOT-223, Surface Mount

ONSEMI

The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performanc...

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P Channel 30V 5A 0.065ohm
FZT651
FZT651 - Transistor, NPN, SOT223

SC10977

Transistor, NPN, SOT223

DIODES INC.

The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and “Green” moulding compound, terminals are matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogniz...

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ZXMP4A16K
ZXMP4A16K - Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount

SC11204

Power MOSFET, P Channel, 40 V, 9.9 A, 0.06 ohm, TO-252 (DPAK), Surface Mount

DIODES INC.

The ZXMP4A16K is a new generation Trench P-channel enhancement-mode MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes it ideal for high efficiency and low voltage applications....

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P Channel 40V 9.9A 0.06ohm
STP40NF10
STP40NF10 - Power MOSFET, N Channel, 100 V, 50 A, 0.025 ohm, TO-220, Through Hole

SC11103

Power MOSFET, N Channel, 100 V, 50 A, 0.025 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP40NF10 is a N-channel low gate charge STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alig...

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N Channel 100V 50A 0.025ohm
BDV66B
BDV66B - Darlington Transistor, TO247

SC06868

Darlington Transistor, TO247

MULTICOMP PRO

The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...

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BD136
BD136 - Transistor, PNP, TO126

SC09318

Transistor, PNP, TO126

STMICROELECTRONICS

The BD136 is a PNP complementary epitaxial planar Low Voltage Transistor mounted in the plastic package. It is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Pre-selected in DC current gain

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MJE3055T
MJE3055T - Transistor, NPN, TO220

SC06752

Transistor, NPN, TO220

MULTICOMP PRO

The MJE3055T is a 60V Silicon NPN Complementary Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 20 minimum at Ic = 4A) • Collector-emitter saturation voltage(Vce (sat) = 1.1V maximum at Ic...

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ZTX705
ZTX705 - Darlington Transistor, E-Line

SC06840

Darlington Transistor, E-Line

DIODES INC.

The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...

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TIP35C
TIP35C - Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A

SC06791

Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A

STMICROELECTRONICS

The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...

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FDD4685
FDD4685 - Power MOSFET, P Channel, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Surface Mount

SC11194

Power MOSFET, P Channel, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD4685 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combi...

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P Channel 40V 32A 0.023ohm
BCX17
BCX17 - Transistor, PNP SOT23

SC06607

Transistor, PNP SOT23

NXP

The BCX17 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the saturated switching and driver applications, thick and thin-film circuits. • High current • Low voltage • NPN complement is BCX19 • T1 Marking code

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STP16NF06L..
STP16NF06L.. - Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

SC11129

Power MOSFET, N Channel, 60 V, 16 A, 0.07 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...

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N Channel 60V 16A 0.07ohm
2N7002
2N7002 - Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount

SC11027

Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

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N Channel 60V 115mA 1.2ohm
IRFP4321PBF
IRFP4321PBF - Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole

SC11179

Power MOSFET, N Channel, 150 V, 78 A, 0.012 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Low RDS (ON)...

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N Channel 150V 78A 0.012ohm
TIP120
TIP120 - Darlington Transistor, TO220

SC10999

Darlington Transistor, TO220

STMICROELECTRONICS

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...

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STW10NK80Z.
STW10NK80Z. - Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

SC06405

Power MOSFET, N Channel, 800 V, 9 A, 0.78 ohm, TO-247, Through Hole

STMICROELECTRONICS

• Channel Type : N Channel • Drain Source Voltage Vds : 800V • Continuous Drain Current Id : 9A • Drain Source On State Resistance : 0.78ohm

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N Channel 800V 9A 0.78ohm
MJE15033G
MJE15033G - Transistor, PNP, TO220

SC06827

Transistor, PNP, TO220

ONSEMI

The MJE15033G is a PNP Power Transistor designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth and high DC current gain. • 62.5°C/W Junction-to-ambient thermal resistance • 2.5°C/W Junction-to-case thermal resistance

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BU806
BU806 - Darlington Transistor, TO220

SC06858

Darlington Transistor, TO220

MULTICOMP PRO

The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...

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TIP102G
TIP102G - Darlington Transistor, TO220

SC06859

Darlington Transistor, TO220

ONSEMI

The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors

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ZVN4306A
ZVN4306A - Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole

SC06968

Power MOSFET, N Channel, 60 V, 1.1 A, 0.45 ohm, TO-226AA, Through Hole

DIODES INC.

The ZVN4306A is a 60V E-Line N-channel Enhancement Mode Vertical DMOSFET with matte tin plated terminals. The MOSFET is ideal for DC/DC convertors and solenoids/relay drivers for automotive. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0...

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N Channel 60V 1.1A 0.45ohm
IRF9Z34NPBF
IRF9Z34NPBF - Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

SC11120

Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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P Channel 55V 17A 0.1ohm
ZTX651
ZTX651 - Transistor, NPN, E-Line

SC10970

Transistor, NPN, E-Line

DIODES INC.

The ZTX651 from Diode Inc is a through hole, 60V NPN medium power transistor in E-Line (TO-92 Compatible) package. This device is based on moulded plastic and “Green” moulding compound and terminals are matte tin finish. • Automotive grade AEC-Q101 qualifi...

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IRFR9110PBF
IRFR9110PBF - Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

SC11203

Power MOSFET, P Channel, 100 V, 3.1 A, 1.2 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave sol...

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P Channel 100V 3.1A 1.2ohm
TIP121
TIP121 - Power Transistor

SC06508

Power Transistor

STMICROELECTRONICS

The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...

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