Transistors

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BCW70,215
BCW70,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05796

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BCW70 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW71 and BCW72 • H2 Marking code

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SIR422DP-T1-GE3
SIR422DP-T1-GE3 - Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount

SC16864

Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount

VISHAY

The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...

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N Channel 40V 40A 0.0054ohm
FDS4435BZ
FDS4435BZ - Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount

SC16772

Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount

ONSEMI

The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...

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P Channel 30V 8.8A 0.016ohm
BS170-D27Z
BS170-D27Z - Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

SC15773

Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

ONSEMI

The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...

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N Channel 60V 500mA 1.2ohm
DMN3404L-7
DMN3404L-7 - Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount

SC16731

Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount

DIODES INC.

The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...

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N Channel 30V 4.2A 0.028ohm
MMBT3906LT1G
MMBT3906LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD

SC16069

Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD

ONSEMI

MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is -40VDC • Collector-base voltage is -40VDC • Collector current - continuous is -200mA DC • Total device dissipation is a 225mW • Junction and ...

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BSH111BKR
BSH111BKR - Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD

SC16763

Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD

NEXPERIA

The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...

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N Channel 55V 210mA 2.3ohm
TIP122
TIP122 - Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 5A, 65W, TO-220

SC15813

Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 5A, 65W, TO-220

MULTICOMP PRO

The TIP122 is a high-performance, Darlington transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling cap...

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IRLML9301TRPBF
IRLML9301TRPBF - Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount

SC16719

Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount

INFINEON

The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...

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P Channel 30V 3.6A 0.051ohm
BC817-40
BC817-40 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

SC16042

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

MULTICOMP PRO

The BC817-40 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Te...

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FDT457N
FDT457N - Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount

SC16734

Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount

ONSEMI

The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...

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N Channel 30V 5A 0.06ohm
BC33740TA
BC33740TA - Bipolar (BJT) Single Transistor, NPN, 45 V, 800mA, 625mW, TO-92,

SC15771

Bipolar (BJT) Single Transistor, NPN, 45 V, 800mA, 625mW, TO-92,

ONSEMI

The BC33740TA is a 45V NPN Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. It is complement to BC327/BC328 swit...

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IHW30N160R5XKSA1
IHW30N160R5XKSA1 - IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247

SC15923

IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247

INFINEON

IHW30N160R5XKSA1 is a reverse-conducting IGBT with monolithic body diode. Applications include induction cooking and microwave ovens. • Collector-emitter voltage is 1600V, DC collector current is 39A(Tc = 100°C ) • Powerful monolithic body diode with low f...

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BCX54-16,115
BCX54-16,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 1A, 500mW, SOT-89, SMD

SC16049

Bipolar (BJT) Single Transistor, NPN, 45V, 1A, 500mW, SOT-89, SMD

NEXPERIA

The BCX54 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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BC817W,115
BC817W,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD

SC16094

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD

NEXPERIA

The BC817W series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807W PNP complement

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2N3055G
2N3055G - Bipolar (BJT) Single Transistor, NPN, 60V, 15A, 115W, TO-204AA

SC15764

Bipolar (BJT) Single Transistor, NPN, 60V, 15A, 115W, TO-204AA

ONSEMI

The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. • Excellent safe operating area • DC Current gain(hFE = 20 to 70 at Ic = 4ADC) • Collector-emitter saturation voltage...

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NX7002AKVL
NX7002AKVL - SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB

SC16890

SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB

NEXPERIA

The NX7002AKVL from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drive, high speed line driver, low side...

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N Channel 60V 190mA 3ohm
BC140-16
BC140-16 - Bipolar Transistor, NPN, 40V, 1A, TO-39

SC15377

Bipolar Transistor, NPN, 40V, 1A, TO-39

MULTICOMP PRO

The BC140-16 is a NPN medium Power Transistor, designed for use in power amplifier and switching applications. • 80V Collector base voltage • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for detai...

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2N3904BU
2N3904BU - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15757

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

ONSEMI

The 2N3904BU is a NPN Transistor for general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • 200°C/W Thermal Resistance, Junction-to-Ambient

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FMMT593
FMMT593 - Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD

SC16061

Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT593 is a PNP silicon planar high voltage Bipolar Transistor offers -120V collector-base voltage and -1A continuous collector current. • FMMT493 Complementary NPN type • -55 to 150°C Operating temperature range

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DMP3056L-7
DMP3056L-7 - Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

SC15968

Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

DIODES INC.

DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...

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P Channel 30V 4.3A 0.05ohm
MMBTA56LT1G
MMBTA56LT1G - Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23

SC16075

Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23

ONSEMI

The MMBTA56LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery...

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IRLML0060TRPBF
IRLML0060TRPBF - Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount

SC16754

Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 60V 2.7A 0.078ohm
FDN327N
FDN327N - Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

SC16796

Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge

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N Channel 20V 2A 0.07ohm
STD35P6LLF6
STD35P6LLF6 - SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

SC16818

SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

STMICROELECTRONICS

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss

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P Channel 60V 35A 0.025ohm