Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BCW70,215
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SC05796 |
Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BCW70 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW71 and BCW72 • H2 Marking code
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SIR422DP-T1-GE3
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SC16864 |
Power MOSFET, N Channel, 40 V, 40 A, 0.0054 ohm, PowerPAK SO, Surface Mount VISHAY The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...
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N Channel | 40V | 40A | 0.0054ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS4435BZ
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SC16772 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount ONSEMI The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...
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P Channel | 30V | 8.8A | 0.016ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BS170-D27Z
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SC15773 |
Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92 ONSEMI The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN3404L-7
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SC16731 |
Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount DIODES INC. The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...
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N Channel | 30V | 4.2A | 0.028ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906LT1G
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SC16069 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is -40VDC • Collector-base voltage is -40VDC • Collector current - continuous is -200mA DC • Total device dissipation is a 225mW • Junction and ...
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BSH111BKR
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SC16763 |
Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD NEXPERIA The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...
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N Channel | 55V | 210mA | 2.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP122
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SC15813 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 5A, 65W, TO-220 MULTICOMP PRO The TIP122 is a high-performance, Darlington transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling cap...
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1+ €0.4641 (€0.57) 10+ €0.4284 (€0.53) 100+ €0.3927 (€0.48) |
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IRLML9301TRPBF
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SC16719 |
Power MOSFET, P Channel, 30 V, 3.6 A, 0.051 ohm, SOT-23, Surface Mount INFINEON The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...
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P Channel | 30V | 3.6A | 0.051ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40
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SC16042 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD MULTICOMP PRO The BC817-40 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Te...
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FDT457N
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SC16734 |
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount ONSEMI The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is ...
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N Channel | 30V | 5A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33740TA
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SC15771 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 800mA, 625mW, TO-92, ONSEMI The BC33740TA is a 45V NPN Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. It is complement to BC327/BC328 swit...
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IHW30N160R5XKSA1
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SC15923 |
IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247 INFINEON IHW30N160R5XKSA1 is a reverse-conducting IGBT with monolithic body diode. Applications include induction cooking and microwave ovens. • Collector-emitter voltage is 1600V, DC collector current is 39A(Tc = 100°C ) • Powerful monolithic body diode with low f...
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BCX54-16,115
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SC16049 |
Bipolar (BJT) Single Transistor, NPN, 45V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX54 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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BC817W,115
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SC16094 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD NEXPERIA The BC817W series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807W PNP complement
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2N3055G
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SC15764 |
Bipolar (BJT) Single Transistor, NPN, 60V, 15A, 115W, TO-204AA ONSEMI The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. • Excellent safe operating area • DC Current gain(hFE = 20 to 70 at Ic = 4ADC) • Collector-emitter saturation voltage...
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NX7002AKVL
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SC16890 |
SMD N Channel Power MOSFET, 60V, 190mA, 3 Ohm, TO-236AB NEXPERIA The NX7002AKVL from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drive, high speed line driver, low side...
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N Channel | 60V | 190mA | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC140-16
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SC15377 |
Bipolar Transistor, NPN, 40V, 1A, TO-39 MULTICOMP PRO The BC140-16 is a NPN medium Power Transistor, designed for use in power amplifier and switching applications. • 80V Collector base voltage • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for detai...
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2N3904BU
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SC15757 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904BU is a NPN Transistor for general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • 200°C/W Thermal Resistance, Junction-to-Ambient
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FMMT593
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SC16061 |
Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT593 is a PNP silicon planar high voltage Bipolar Transistor offers -120V collector-base voltage and -1A continuous collector current. • FMMT493 Complementary NPN type • -55 to 150°C Operating temperature range
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DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTA56LT1G
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SC16075 |
Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23 ONSEMI The MMBTA56LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery...
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IRLML0060TRPBF
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SC16754 |
Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount INFINEON The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 60V | 2.7A | 0.078ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDN327N
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SC16796 |
Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount ONSEMI The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge
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N Channel | 20V | 2A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD35P6LLF6
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SC16818 |
SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK) STMICROELECTRONICS This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
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P Channel | 60V | 35A | 0.025ohm |