Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BC161-16
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SC15812 |
Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39 MULTICOMP PRO The BC161-16 is a -60V Silicon PNP Medium Power Transistor ideal for medium power amplifier and switching applications. • Collector-base voltage(Vcbo = 60V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month ...
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IRFZ24NPBF
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SC16935 |
N Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB INFINEON Single N-channel HEXFET® power MOSFET. • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Planar cell structure for wide SOA • Product qualification according to JEDEC standard • High-current rating • Increased ...
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N Channel | 55V | 17A | 0.07ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FZT605
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SC16092 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 1.5A, 2W, SOT-223, SMD DIODES INC. Silicon NPN Darlington transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • Transistor is ideal for use in lamp, relay and solenoid driving • UL flammability rating 94V-0 • Qualified to AEC-Q101 Standards for High Re...
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BCP53-16,115
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SC16029 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD NEXPERIA The BCP53 series 1A PNP Medium Power Transistor with three current gain selections. It offers exposed heat-sink for excellent thermal and electrical conductivity. • High current • High power dissipation capability • Leadless very small SMD plastic package ...
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MMBTA06LT1G
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SC16037 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 225mW, SOT-23, SMD ONSEMI MMBTA06LT1G is a driver transistor. • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C) • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C • Collector current - continuous is 500mAdc • Electrostatic discha...
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BFR93AE6327HTSA1
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SC16012 |
Bipolar - RF Transistor, NPN, 12V, 6GHz, 300mW, 90mA, SOT-23 INFINEON
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DMG2305UX-13
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SC16744 |
Power MOSFET, P Channel, 20V, 4.2A, 0.04 Ohm, SOT-23, SMD DIODES INC. DMG2305UX-13 is a P-channel enhancement mode MOSFET in a 3 pin SOT23 package. This MOSFET is designed to minimize on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high efficiency power management applications....
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P Channel | 20V | 4.2A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4110PBF
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SC16958 |
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole INFINEON The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 180A | 0.0045ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1943OTU
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SC15776 |
Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264 ONSEMI The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315
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1+ €6.783 (€8.34) 10+ €6.1047 (€7.51) 100+ €4.5696 (€5.62) |
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STW4N150
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SC15828 |
Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247, STMICROELECTRONICS The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate cha...
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N Channel | 1.5kV | 4A | 7ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-16LT1G
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SC16059 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD ONSEMI The BC817-16LT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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DMP6023LE-13
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SC15971 |
Power MOSFET, P Channel, 60V, 18.2A, 0.028 Ohm, SOT-223, SMD DIODES INC. DMP6023LE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications ...
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P Channel | 60V | 18.2A | 0.028ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138PS,115
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SC15997 |
Dual MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-363, SMD NEXPERIA The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compati...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD122G
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SC16026 |
Bipolar (BJT) Single Transistor, NPN, 100V, 8A, 1.75W, TO-252 (DPAK), SMD ONSEMI The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series a...
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BC807-25
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SC16071 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD DIODES INC. The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...
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BC856ALT1G
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SC16053 |
Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23 ONSEMI The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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BC846A
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SC16085 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC846A is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Operati...
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IRF7342TRPBF
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SC16807 |
Dual MOSFET, P Channel, 55V, 3.4A, 0.095 Ohm, SOIC, SMD INFINEON The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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FDN352AP
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SC16755 |
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount ONSEMI The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suit...
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P Channel | 30V | 1.3A | 0.18ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSN20BKR
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SC16765 |
Power MOSFET, Trench, N Channel, 60V, 265mA, 2.1 Ohm, SOT-23, SMD NEXPERIA The BSN20BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay drivers, high speed line drivers, low-side...
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N Channel | 60V | 265mA | 2.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301CDS-T1-GE3
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SC16862 |
Power MOSFET, P Channel, 20 V, 3.1 A, 0.09 ohm, SOT-23, Surface Mount VISHAY The SI2301CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications. • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 20V | 3.1A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3904TA
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SC15823 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904 is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier. • Collector to...
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BC807-25,215
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SC16016 |
Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD NEXPERIA The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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2N7002K-7
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SC15985 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD DIODES INC. The 2N7002K-7 is an N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It features molded green plasti...
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N Channel | 60V | 380mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138LT3G
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SC15999 |
Power MOSFET, N Channel, 50V, 200mA, 5.6 Ohm, SOT-23, SMD ONSEMI The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space. • ±20VDC Continuous gate-to-source voltage • 556°C/W Junction-to-ambient thermal resistance
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N Channel | 50V | 200mA | 5.6ohm |