Transistors

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MJD45H11G
MJD45H11G - Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD

SC16105

Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...

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BC817-40LT1G
BC817-40LT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD

SC16051

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 225mW, SOT-23, SMD

ONSEMI

The BC817-40LT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive...

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BSS84W-7-F
BSS84W-7-F - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount

SC16773

Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount

DIODES INC.

The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain supe...

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P Channel 50V 130mA 10ohm
FDS9435A
FDS9435A - Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount

SC16915

Power MOSFET, P Channel, 30 V, 5.3 A, 0.042 ohm, SOIC, Surface Mount

ONSEMI

The FDS9435A is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining s...

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P Channel 30V 5.3A 0.042ohm
ZXMN6A07FTA
ZXMN6A07FTA - Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount

SC16749

Power MOSFET, N Channel, 60 V, 1.4 A, 0.25 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXMN6A07FTA is a N-channel Enhancement Mode MOSFET with matte tin-plated terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. • Low...

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N Channel 60V 1.4A 0.25ohm
SUM110P04-05-E3
SUM110P04-05-E3 - Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount

SC16869

Power MOSFET, P Channel, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount

VISHAY

The SUM110P04-05-E3 is a -40V P-channel TrenchFET® Power MOSFET.

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P Channel 40V 110A 0.0041ohm
STW45NM50
STW45NM50 - Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

SC15829

Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

STMICROELECTRONICS

The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent ava...

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N Channel 550V 45A 0.1ohm
BC857BLT1G
BC857BLT1G - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

SC16057

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

ONSEMI

The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...

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NTF2955T1G
NTF2955T1G - SMD P Channel Power MOSFET,  60V, 2.6A, 0.17 Ohm, SOT-223

SC16880

SMD P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223

ONSEMI

NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management. • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A) • Gate-to-source voltage is ±20V (TJ = 25...

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P Channel 60V 2.6A 0.17ohm
IRLML5103TRPBF
IRLML5103TRPBF - Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

SC16784

Power MOSFET, P Channel, 30 V, 600 mA, 0.6 ohm, µSOIC, Surface Mount

INFINEON

The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an ext...

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P Channel 30V 600mA 0.6ohm
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3 - Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount

SC16775

Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount

VISHAY

• 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package • 100% Rg tested • 100 % UIS tested • Suitable for load switches, adaptor switch and notebook PCs

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P Channel 40V 7.2A 0.036ohm
TN0702N3-G
TN0702N3-G - N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

SC17007

N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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N Channel 20V 530mA 1ohm
NDS332P
NDS332P - Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

SC16872

Power MOSFET, P Channel, 20 V, 1 A, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS332P is a P-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage application...

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P Channel 20V 1A 0.3ohm
BC546BTF
BC546BTF - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92

SC15782

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92

ONSEMI

The BC546BTF is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556

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STP4N150
STP4N150 - Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220

SC15827

Power MOSFET, N Channel, 1.5kV, 4A, 5 ohm, TO-220

STMICROELECTRONICS

• 1500V, 4A N-channel PowerMESH™ power MOSFET in 3 pin TO-220 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Strengthened layout with edge termination • Lowest RDS(on) per area, unrivalled gate charge, s...

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N Channel 1.5kV 4A 5ohm
BFR106E6327HTSA1
BFR106E6327HTSA1 - Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23

SC15949

Bipolar RF Transistor, NPN, 16V, 5GHz, 700mW, 210mA, SOT-23

INFINEON

• Low noise silicon bipolar RF transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, 70mA • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector des...

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FDN340P
FDN340P - Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SOT-23, Surface Mount

SC16814

Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SOT-23, Surface Mount

ONSEMI

The FDN340P is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at p...

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P Channel 20V 2A 0.06ohm
IRF740PBF
IRF740PBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC16909

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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N Channel 400V 10A 0.55ohm
VN10LF
VN10LF - SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

SC16910

SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

DIODES INC.

VN10LF is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 60V • Continuous drain current at Tamb=25°C is 150mA • Pulsed drain current is 3A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 330mW • Static drain sou...

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N Channel 60V 150mA 5ohm
IRF1010EPBF
IRF1010EPBF - Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB

SC17255

Power MOSFET, N Channel, 60V, 81A, 0.012 Ohm, TO-220AB

INFINEON

The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...

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N Channel 60V 81A 0.012ohm
BFR92PE6327HTSA1
BFR92PE6327HTSA1 - Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23

SC16006

Bipolar - RF Transistor, NPN, 15V, 5GHz, 280mW, 45mA, SOT-23

INFINEON

The BFR 92P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 to 20mA. • Complementary type - BFT91 (PNP)

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BC846ALT1G
BC846ALT1G - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16099

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC846ALT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP capable • Moist...

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DN2540N3-G
DN2540N3-G - Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole

SC16921

Power MOSFET, N Channel, 400 V, 120 mA, 17 ohm, TO-92, Through Hole

MICROCHIP

The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar t...

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N Channel 400V 120mA 17ohm
BSS138BKS,115
BSS138BKS,115 - Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount

SC16799

Dual MOSFET, Trench, N Channel, 60V, 320mA, 1 ohm, SOT-363, Surface Mount

NEXPERIA

The BSS138BKS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications. • Logic-level compat...

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N Channel - - -
SI2333DDS-T1-GE3
SI2333DDS-T1-GE3 - Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount

SC16861

Power MOSFET, P Channel, 12 V, 6 A, 0.023 ohm, SOT-23, Surface Mount

VISHAY

The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 12V 6A 0.023ohm