Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ459EP-T1_GE3
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SC16852 |
Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 52A | 0.0155ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS131H6327XTSA1
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SC16714 |
Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount INFINEON The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device
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N Channel | 240V | 110mA | 7.7ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP450PBF
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SC17006 |
Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole VISHAY The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...
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N Channel | 500V | 14A | 0.4ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT4401LT1G
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SC16030 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 60VDC Collect...
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2N7002-7-F
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SC15986 |
Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD DIODES INC. The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...
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N Channel | 60V | 210mA | 13.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB7430PBF
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SC16945 |
Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole INFINEON Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...
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1+ €2.4395 (€3.00) 10+ €1.9635 (€2.42) 100+ €1.7374 (€2.14) |
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N Channel | 40V | 195A | 0.001ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS250P
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SC16888 |
P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line DIODES INC. BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...
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P Channel | 45V | 230mA | 14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460APBF
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SC16962 |
N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC VISHAY • Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)
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N Channel | 500V | 20A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP41A
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SC15379 |
Bipolar Transistor, NPN, 60V, 6A, TO-220 MULTICOMP PRO The TIP41A is a 60V NPN Power Transistor designed for general purpose amplifier and switching applications. • Collector-emitter sustaining voltage (Vceo (sus) = 60V minimum) • Collector-emitter saturation voltage(Vce (sat) = 1.5V maximum at Ic = 6A) • Coll...
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MMBT5401-7-F
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SC15929 |
Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD DIODES INC. MMBT5401-7-F is a PNP high-voltage transistor. • Epitaxial planar die construction • Complementary NPN type - MMBT5551 • Ideal for low-power amplification and switching • SOT23 package • Power dissipation is 310mW at TA = +25°C • Operating and storage temp...
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DMN3023L-7
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SC15970 |
Power MOSFET, N Channel, 30V, 6.2A, 0.025 Ohm, SOT-23, SMD DIODES INC. DMN3023L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical ...
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N Channel | 30V | 6.2A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STH3N150-2
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SC16870 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, H2PAK-2, Surface Mount STMICROELECTRONICS • 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin H2PAK-2 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Designed using company’s consolidated strip layout-based MESHOVERLAY™ process • Suitable fo...
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N Channel | 1.5kV | 2.5A | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXM61P02F
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SC16878 |
Power MOSFET, P Channel, 20 V, 900 mA, 0.6 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61P02F is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish terminals as per MIL-STD-202 standard. It utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed, ma...
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P Channel | 20V | 900mA | 0.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP47
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SC15380 |
Bipolar Transistor, NPN, 250V, 1A, TO-220 MULTICOMP PRO The TIP47 is a 250V Silicon NPN High Voltage Power Transistor designed for line operated audio output amplifier and switching power supply drivers applications. • Collector-emitter sustaining voltage (Vceo (sus) = 250 to 400V minimum) • Collector-base volt...
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BC108B
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SC15809 |
Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18 MULTICOMP PRO The BC108B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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IRFP4468PBF
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SC15830 |
Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC, INFINEON The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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N Channel | 100V | 290A | 0.002ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002DW-7-F
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SC15992 |
Dual MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-363, SMD DIODES INC. The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications. • Low ON-resistance • Lo...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7416TRPBF
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SC15957 |
Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.02ohm
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P Channel | 30V | 10A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF27P06
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SC16932 |
Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole ONSEMI The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...
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P Channel | 60V | 17A | 0.055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB072N15N3GATMA1
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SC16960 |
Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...
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N Channel | 150V | 100A | 0.0058ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2222SG
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SC15938 |
Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67 ONSEMI
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BSS138NH6327XTSA2
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SC15994 |
Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD INFINEON • 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101
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N Channel | 60V | 230mA | 2.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2312CDS-T1-GE3
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SC16735 |
Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount VISHAY The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...
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N Channel | 20V | 6A | 0.0265ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TP0606N3-G
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SC16919 |
P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 60V | 320mA | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2393DS-T1-GE3
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SC16883 |
SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23 VISHAY • TrenchFET® Gen IV P channel power MOSFET • 100% Rg and UIS tested
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P Channel | 30V | 7.5A | 0.0189ohm |