Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance
 
 
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SQJ459EP-T1_GE3
SQJ459EP-T1_GE3 - Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount

SC16852

Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 52A 0.0155ohm
BSS131H6327XTSA1
BSS131H6327XTSA1 - Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount

SC16714

Power MOSFET, N Channel, 240 V, 110 mA, 7.7 ohm, SOT-23, Surface Mount

INFINEON

The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device

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N Channel 240V 110mA 7.7ohm
IRFP450PBF
IRFP450PBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC17006

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 500V 14A 0.4ohm
MMBT4401LT1G
MMBT4401LT1G - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD

SC16030

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 60VDC Collect...

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2N7002-7-F
2N7002-7-F - Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

SC15986

Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

DIODES INC.

The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...

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N Channel 60V 210mA 13.5ohm
IRFB7430PBF
IRFB7430PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

SC16945

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

INFINEON

Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...

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N Channel 40V 195A 0.001ohm
BS250P
BS250P - P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

SC16888

P Channel Power MOSFET, 45V, 230mA, 14 Ohm, E-Line

DIODES INC.

BS250P is a P-channel enhancement mode vertical DMOS FET. • Drain-source breakdown voltage is -45V at ID=-100µA, VGS=0V, TA=+25°C • Gate-source threshold voltage is -3.5V at ID=-1mA, VDS=VGS, TA=+25°C • Zero gate voltage drain current is -500nA max VGS=0V,...

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P Channel 45V 230mA 14ohm
IRFP460APBF
IRFP460APBF - N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

SC16962

N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

VISHAY

• Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)

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N Channel 500V 20A 0.27ohm
TIP41A
TIP41A - Bipolar Transistor, NPN, 60V, 6A, TO-220

SC15379

Bipolar Transistor, NPN, 60V, 6A, TO-220

MULTICOMP PRO

The TIP41A is a 60V NPN Power Transistor designed for general purpose amplifier and switching applications. • Collector-emitter sustaining voltage (Vceo (sus) = 60V minimum) • Collector-emitter saturation voltage(Vce (sat) = 1.5V maximum at Ic = 6A) • Coll...

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MMBT5401-7-F
MMBT5401-7-F - Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD

SC15929

Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD

DIODES INC.

MMBT5401-7-F is a PNP high-voltage transistor. • Epitaxial planar die construction • Complementary NPN type - MMBT5551 • Ideal for low-power amplification and switching • SOT23 package • Power dissipation is 310mW at TA = +25°C • Operating and storage temp...

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DMN3023L-7
DMN3023L-7 - Power MOSFET, N Channel, 30V, 6.2A, 0.025 Ohm, SOT-23, SMD

SC15970

Power MOSFET, N Channel, 30V, 6.2A, 0.025 Ohm, SOT-23, SMD

DIODES INC.

DMN3023L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical ...

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N Channel 30V 6.2A 0.025ohm
STH3N150-2
STH3N150-2 - Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, H2PAK-2, Surface Mount

SC16870

Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, H2PAK-2, Surface Mount

STMICROELECTRONICS

• 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin H2PAK-2 package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Designed using company’s consolidated strip layout-based MESHOVERLAY™ process • Suitable fo...

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N Channel 1.5kV 2.5A 6ohm
ZXM61P02F
ZXM61P02F - Power MOSFET, P Channel, 20 V, 900 mA, 0.6 ohm, SOT-23, Surface Mount

SC16878

Power MOSFET, P Channel, 20 V, 900 mA, 0.6 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61P02F is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish terminals as per MIL-STD-202 standard. It utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed, ma...

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P Channel 20V 900mA 0.6ohm
TIP47
TIP47 - Bipolar Transistor, NPN, 250V, 1A, TO-220

SC15380

Bipolar Transistor, NPN, 250V, 1A, TO-220

MULTICOMP PRO

The TIP47 is a 250V Silicon NPN High Voltage Power Transistor designed for line operated audio output amplifier and switching power supply drivers applications. • Collector-emitter sustaining voltage (Vceo (sus) = 250 to 400V minimum) • Collector-base volt...

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BC108B
BC108B - Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18

SC15809

Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18

MULTICOMP PRO

The BC108B is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...

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IRFP4468PBF
IRFP4468PBF - Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

SC15830

Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

INFINEON

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 100V 290A 0.002ohm
2N7002DW-7-F
2N7002DW-7-F - Dual MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-363, SMD

SC15992

Dual MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-363, SMD

DIODES INC.

The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications. • Low ON-resistance • Lo...

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N Channel - - -
IRF7416TRPBF
IRF7416TRPBF - Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD

SC15957

Power MOSFET, P Channel, 30V, 10A, 0.02 Ohm, SOIC, SMD

INFINEON

• Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 10A • Drain Source On State Resistance : 0.02ohm

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P Channel 30V 10A 0.02ohm
FQPF27P06
FQPF27P06 - Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole

SC16932

Power MOSFET, P Channel, 60 V, 17 A, 0.055 ohm, TO-220F, Through Hole

ONSEMI

The FQPF27P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performa...

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P Channel 60V 17A 0.055ohm
IPB072N15N3GATMA1
IPB072N15N3GATMA1 - Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

SC16960

Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption. • Environment-friendly • High po...

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N Channel 150V 100A 0.0058ohm
2SA2222SG
2SA2222SG - Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67

SC15938

Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67

ONSEMI

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BSS138NH6327XTSA2
BSS138NH6327XTSA2 - Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

SC15994

Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

INFINEON

• 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101

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N Channel 60V 230mA 2.2ohm
SI2312CDS-T1-GE3
SI2312CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount

SC16735

Power MOSFET, N Channel, 20 V, 6 A, 0.0265 ohm, SOT-23, Surface Mount

VISHAY

The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...

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N Channel 20V 6A 0.0265ohm
TP0606N3-G
TP0606N3-G - P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92

SC16919

P Channel Power MOSFET, Vertical DMOS FET, 60V, 320mA, 3 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel 60V 320mA 3ohm
SI2393DS-T1-GE3
SI2393DS-T1-GE3 - SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23

SC16883

SMD P Channel Power MOSFET, 30V, 7.5A, 0.0189 Ohm, SOT-23

VISHAY

• TrenchFET® Gen IV P channel power MOSFET • 100% Rg and UIS tested

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P Channel 30V 7.5A 0.0189ohm