Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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FDN5618P
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SC16699 |
SMD Power MOSFET P Channel PowerTrench Transistor, SuperSOT, 60V, 1.25A ONSEMI The FDN5618P is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is w...
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P Channel | 60V | 1.25A | 0.17ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF540PBF
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SC15756 |
Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB VISHAY The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...
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N Channel | 100V | 28A | 0.077ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT3904,215
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SC16113 |
Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 200mA, 250mW, TO-236AB, SMD NEXPERIA The PMBT3904,215 is a NPN Switching Transistor housed in a surface-mount plastic package. • PNP complement is PMBT3906 • 1A Marking code
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FDP18N50
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SC15742 |
Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole ONSEMI The FDP18N50 is a 500V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse rec...
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N Channel | 500V | 18A | 0.265ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH105,215
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SC16721 |
Power MOSFET, N Channel, 20 V, 1.05 A, 0.14 ohm, SOT-23, Surface Mount NEXPERIA The BSH105,215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...
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N Channel | 20V | 1.05A | 0.14ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC550CTA
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SC15786 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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IRF1404ZPBF
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SC16968 |
Power MOSFET, N Channel, 40 V, 190 A, 0.0037 ohm, TO-220AB, Through Hole INFINEON The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching ...
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N Channel | 40V | 190A | 0.0037ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6244TRPBF
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SC16790 |
Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount INFINEON The IRLML6244TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 20V | 6.3A | 0.021ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846,215
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SC16015 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BC846,215 is a NPN general purpose Transistor in SMD plastic package. • Two Different Gain Selections
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SI2312BDS-T1-E3
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SC16834 |
Power MOSFET, N Channel, 20 V, 3.9 A, 0.025 ohm, SOT-23, Surface Mount VISHAY The SI2312BDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. • 100% Rg tested • -55 to 150°C Operating temperature range
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N Channel | 20V | 3.9A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PN2222ABU
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SC15797 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 625mW, TO-226AA ONSEMI The PN2222ABU is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications. • 75V Collector to base voltage ...
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SUM110P06-07L-E3
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SC16897 |
Power MOSFET, P Channel, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P06-07L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 40°C/W Junction-to-ambient thermal resistance • 0.4°C/W Junction-to-case thermal resistance
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P Channel | 60V | 110A | 0.0055ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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SPW47N60C3FKSA1
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SC15826 |
Power MOSFET, N Channel, 650V, 47A, 0.07 ohm, TO-247, INFINEON The SPW47N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power c...
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N Channel | 650V | 47A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846S,115
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SC16128 |
Bipolar Transistor Array, NPN, 65V, 100mA, 200mW, 110hFE, SOT-363 NEXPERIA The BC846S is a dual NPN General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and small signal amplification. • Reduces number of components and board space • No mutual interference between the transistors ...
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FDT86102LZ
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SC17016 |
Power MOSFET, N Channel, 100 V, 6.6 A, 0.022 ohm, SOT-223, Surface Mount ONSEMI This N Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench® process that has been especially tailored to minimise the on state resistance and switch loss. G-S Zener has been added to enhance ESD voltage levels. • Suitable for DC/D...
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N Channel | 100V | 6.6A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP75NF75
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SC16908 |
Power MOSFET, N Channel, 75 V, 80 A, 0.0095 ohm, TO-220, Through Hole STMICROELECTRONICS The STP75NF75 is a 75V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolat...
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N Channel | 75V | 80A | 0.0095ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2219A
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SC15752 |
Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 400mW, 800mA, 35 hFE MULTICOMP PRO 2N2219A is a NPN silicon transistor for high speed switching applications. • 75V collector-base voltage • 6V emitter-base voltage • 1.2W total device dissipation • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms ...
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BUK98150-55A/CUF
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SC16879 |
SMD N Channel Power MOSFET, 55V, 5.5A, 0.116 Ohm, SC-73 NEXPERIA The BUK98150-55A/CUF from NEXPERIA is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. • Suitable for 12V & 24V loads, automotive & general purpose power switching and motors, lamps & s...
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N Channel | 55V | 5.5A | 0.116ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002P,215
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SC15989 |
Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, TO-236AB, SMD NEXPERIA The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. • Logic-le...
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N Channel | 60V | 360mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BDW1T1G
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SC16138 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363 ONSEMI The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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BC846BPN,115
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SC16122 |
Bipolar Transistor Array, NPN, PNP, 65V, 100mA, 200mW, 200 hFE, SOT-363 NEXPERIA The BC846BPN is a 100mA NPN-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage •...
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2N2647
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SC15370 |
Unijunction Transistor, 2A, 1µA, 10mA, TO-18 MULTICOMP PRO The 2N2647 is a Silicon PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits as well thyristor trigger circuits. • Low peak point current • Low emitter reverse current • Passivated surface for reliability and uniformity...
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MMBT3906,215
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SC16097 |
Bipolar (BJT) Single Transistor, Switching, PNP, -40V, -200mA, 250mW, TO-236AB, SMD NEXPERIA The MMBT3906,215 is a PNP Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • NPN complement is MMBT3904 • 7B Marking code
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LND150N3-G
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SC16955 |
Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole MICROCHIP The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant...
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N Channel | 500V | 30mA | 850ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||