Transistors

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SS8550DBU
SS8550DBU - Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

SC15798

Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

ONSEMI

The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050

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BC807-40LVL
BC807-40LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15934

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

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SQM40031EL_GE3
SQM40031EL_GE3 - SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK)

SC16939

SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK)

VISHAY

• TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified

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P Channel 40V 120A 0.0025ohm
IRLML6346TRPBF
IRLML6346TRPBF - Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount

SC16737

Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6346TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, DC switches, high side and low side load switch. It is compatible with existing surface-mount techniques. • Halogen-free • Consumer qualification MSL-1 (increase...

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N Channel 30V 3.4A 0.046ohm
BD139-10
BD139-10 - Bipolar Transistor, NPN, 80V, 1.5A, TO-126

SC15373

Bipolar Transistor, NPN, 80V, 1.5A, TO-126

MULTICOMP PRO

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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FDS8447
FDS8447 - Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount

SC16894

Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount

ONSEMI

The FDS8447 is a single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. • Low gate charge • High performance Trench technolo...

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N Channel 40V 12.8A 0.009ohm
STP8NK100Z
STP8NK100Z - Power MOSFET, N Channel, 1 kV, 6.5 A, 1.85 ohm, TO-220, Through Hole

SC16933

Power MOSFET, N Channel, 1 kV, 6.5 A, 1.85 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP8NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 1kV 6.5A 1.85ohm
FMMT591
FMMT591 - Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD

SC16027

Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT591 is a PNP silicon planar medium power Bipolar Transistor offers 355mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491 Complementary NPN type • -55 to 150°C Operating temperature range

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IRF9530PBF
IRF9530PBF - Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-220AB, Through Hole

SC17014

Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-220AB, Through Hole

VISHAY

The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...

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P Channel 100V 12A 0.3ohm
BC846BW,115
BC846BW,115 - Bipolar (BJT) Single Transistor,  NPN, 65V, 100mA, 200mW, SOT-323, SMD

SC16050

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 200mW, SOT-323, SMD

NEXPERIA

The BC846BW,115 is a NPN Switching Transistor in surface mount device plastic package with 3 leads. • Two different gain selections

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FZT853
FZT853 - Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD

SC16106

Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD

DIODES INC.

FZT853 is a 100V NPN silicon planar high current (high performance) transistor in a 4-pin SOT223 package. • Extremely low equivalent on-resistance RCE(sat) 44mohm at 5A • 6A continuous current, up to 10A peak current • Very low saturation voltages • Excell...

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PMV130ENEAR
PMV130ENEAR - SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23

SC16922

SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23

NEXPERIA

The PMV130ENEAR from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable applications: Relay driver, High-speed line driv...

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N Channel 40V 2.1A 0.095ohm
DMG2307L
DMG2307L - Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount

SC16771

Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount

DIODES INC.

The DMG2307L is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain super...

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P Channel 30V 4.6A 0.09ohm
IRLML9303TRPBF
IRLML9303TRPBF - Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount

SC16991

Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount

INFINEON

The IRLML9303TRPBF is a HEXFET® single P-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...

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P Channel 30V 2.3A 0.135ohm
BS170-D75Z
BS170-D75Z - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole

SC16845

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole

ONSEMI

The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...

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N Channel 60V 500mA 1.2ohm
PMV40UN2R
PMV40UN2R - Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount

SC16783

Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swi...

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N Channel 30V 4.4A 0.036ohm
MMBF170LT1G
MMBF170LT1G - SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

SC16703

SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount

ONSEMI

The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA. • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 500mA 5ohm
DMG6601LVT-7
DMG6601LVT-7 - Dual MOSFET, Complementary N and P Channel, 30V, 3.8A, 0.034 Ohm, TSOT-26, SMD

SC16804

Dual MOSFET, Complementary N and P Channel, 30V, 3.8A, 0.034 Ohm, TSOT-26, SMD

DIODES INC.

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Complementary MOSFET • Low On-Resistance • Low Input Capacitance • Fast ...

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Complementary N and P Channel - - -
ZVN3306F
ZVN3306F - SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23

SC16839

SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23

DIODES INC.

• Complement to ZVP3306F • AEC-Q101 Qualified • PPAP capable

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N Channel 60V 150mA 5ohm
STP80NF55-08
STP80NF55-08 - Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole

SC16956

Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density fo...

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N Channel 55V 80A 0.008ohm
BC817
BC817 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

SC16033

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD

MULTICOMP PRO

The BC817 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms...

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IXFN200N10P
IXFN200N10P - MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V

SC17024

MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V

IXYS SEMICONDUCTOR

The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier ...

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N Channel 100V 200A 0.0075ohm
BCX56-16,115
BCX56-16,115 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD

SC16020

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD

NEXPERIA

The BCX56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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MMBT3906-7-F
MMBT3906-7-F - Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD

SC16087

Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD

DIODES INC.

The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MM...

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BC847BLT1G
BC847BLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD

SC16045

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC847BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD rating - Human body model of <gt/>4000V • ESD ratin...

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