Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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SS8550DBU
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SC15798 |
Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA ONSEMI The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050
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BC807-40LVL
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SC15934 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA
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SQM40031EL_GE3
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SC16939 |
SMD P Channel Power MOSFET 40V, 120A, 0.0025 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified
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P Channel | 40V | 120A | 0.0025ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6346TRPBF
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SC16737 |
Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount INFINEON The IRLML6346TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, DC switches, high side and low side load switch. It is compatible with existing surface-mount techniques. • Halogen-free • Consumer qualification MSL-1 (increase...
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N Channel | 30V | 3.4A | 0.046ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD139-10
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SC15373 |
Bipolar Transistor, NPN, 80V, 1.5A, TO-126 MULTICOMP PRO The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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FDS8447
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SC16894 |
Power MOSFET, N Channel, 40 V, 12.8 A, 0.009 ohm, SOIC, Surface Mount ONSEMI The FDS8447 is a single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. • Low gate charge • High performance Trench technolo...
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N Channel | 40V | 12.8A | 0.009ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP8NK100Z
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SC16933 |
Power MOSFET, N Channel, 1 kV, 6.5 A, 1.85 ohm, TO-220, Through Hole STMICROELECTRONICS The STP8NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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1+ €1.6184 (€1.99) 10+ €1.4637 (€1.80) 100+ €1.3209 (€1.62) |
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N Channel | 1kV | 6.5A | 1.85ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT591
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SC16027 |
Bipolar (BJT) Single Transistor, PNP, 60V, -1A, 500mW, SOT-23, SMD DIODES INC. The FMMT591 is a PNP silicon planar medium power Bipolar Transistor offers 355mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491 Complementary NPN type • -55 to 150°C Operating temperature range
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IRF9530PBF
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SC17014 |
Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-220AB, Through Hole VISHAY The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commerci...
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P Channel | 100V | 12A | 0.3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846BW,115
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SC16050 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC846BW,115 is a NPN Switching Transistor in surface mount device plastic package with 3 leads. • Two different gain selections
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FZT853
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SC16106 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 3W, SOT-223, SMD DIODES INC. FZT853 is a 100V NPN silicon planar high current (high performance) transistor in a 4-pin SOT223 package. • Extremely low equivalent on-resistance RCE(sat) 44mohm at 5A • 6A continuous current, up to 10A peak current • Very low saturation voltages • Excell...
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PMV130ENEAR
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SC16922 |
SMD N Channel Power MOSFET FET Transistor, 40V, 2.1A, 0.095 Ohm, SOT-23 NEXPERIA The PMV130ENEAR from NEXPERIA is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable applications: Relay driver, High-speed line driv...
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N Channel | 40V | 2.1A | 0.095ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2307L
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SC16771 |
Power MOSFET, Enhancement Mode, P Channel, 30 V, 4.6 A, 0.09 ohm, SOT-23, Surface Mount DIODES INC. The DMG2307L is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain super...
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P Channel | 30V | 4.6A | 0.09ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML9303TRPBF
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SC16991 |
Power MOSFET, P Channel, 30 V, 2.3 A, 0.135 ohm, SOT-23, Surface Mount INFINEON The IRLML9303TRPBF is a HEXFET® single P-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...
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P Channel | 30V | 2.3A | 0.135ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BS170-D75Z
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SC16845 |
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-226AA, Through Hole ONSEMI The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...
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N Channel | 60V | 500mA | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV40UN2R
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SC16783 |
Power MOSFET, N Channel, 30 V, 4.4 A, 0.036 ohm, SOT-23, Surface Mount NEXPERIA The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swi...
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N Channel | 30V | 4.4A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBF170LT1G
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SC16703 |
SMD N Channel Power MOSFET Transistor, N Channel, 60 V, 500 mA, 5 ohm, SOT-23, Surface Mount ONSEMI The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA. • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 500mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG6601LVT-7
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SC16804 |
Dual MOSFET, Complementary N and P Channel, 30V, 3.8A, 0.034 Ohm, TSOT-26, SMD DIODES INC. This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Complementary MOSFET • Low On-Resistance • Low Input Capacitance • Fast ...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVN3306F
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SC16839 |
SMD N Channel Power MOSFET, Vertical DMOS FET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Complement to ZVP3306F • AEC-Q101 Qualified • PPAP capable
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N Channel | 60V | 150mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP80NF55-08
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SC16956 |
Power MOSFET, N Channel, 55 V, 80 A, 0.008 ohm, TO-220, Through Hole STMICROELECTRONICS The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density fo...
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N Channel | 55V | 80A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817
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SC16033 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 300mW, SOT-23, SMD MULTICOMP PRO The BC817 is a NPN Transistor for use in switching and general purpose medium power amplifier. • Complement to BC 807 • High Collector Current • High Current Gain • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms...
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IXFN200N10P
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SC17024 |
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V IXYS SEMICONDUCTOR The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. • Fast intrinsic rectifier ...
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N Channel | 100V | 200A | 0.0075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX56-16,115
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SC16020 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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MMBT3906-7-F
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SC16087 |
Bipolar (BJT) Single Transistor, PNP, -40V, -200mA, 300mW, SOT-23, SMD DIODES INC. The MMBT3906-7-F is a -40V PNP Small Signal Transistor with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, "Green" molding compound (UL94V-0). Complementary NPN type transistor is MM...
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BC847BLT1G
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SC16045 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD rating - Human body model of <gt/>4000V • ESD ratin...
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