Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance
 
 
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RE1C002UNTCL
RE1C002UNTCL - Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD

SC15965

Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD

ROHM

• Channel Type : N Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 0.8ohm

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N Channel 20V 200mA 0.8ohm
BCX55-16,115
BCX55-16,115 - Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD

SC16066

Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD

NEXPERIA

The BCX55 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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IRFB4410ZPBF
IRFB4410ZPBF - Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole

SC16934

Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptibl...

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N Channel 100V 97A 0.008ohm
IRFR5305TRLPBF
IRFR5305TRLPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount

SC16940

Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount

INFINEON

The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...

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P Channel 55V 31A 0.065ohm
FDV303N
FDV303N - SMD N Channel Power MOSFET, Digital FET, SOT-23, 680mA, 25V

SC16700

SMD N Channel Power MOSFET, Digital FET, SOT-23, 680mA, 25V

ONSEMI

The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....

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N Channel 25V 680mA 0.45ohm
BC33725BU
BC33725BU - Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3

SC15780

Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3

ONSEMI

The BC33725BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327

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FMMT718
FMMT718 - Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD

SC16023

Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD

DIODES INC.

The FMMT718 is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 10A Peak pulse current • Excellent hFE characteristics up to 10A • Exhibits extremely low equivalent on resistance • NPN ...

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BC846B,215
BC846B,215 - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16007

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

BC846B,215 is a 65V, 100mA NPN general purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C

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PDTC143ET,215
PDTC143ET,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm

SC15946

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm

NEXPERIA

The PDTC143ET,215 is a NPN Resistor Equipped Transistor (RET) housed in small surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC84...

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BC847BLT3G
BC847BLT3G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

SC16032

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD

ONSEMI

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FDS3672
FDS3672 - Power MOSFET, N Channel, 100 V, 7.5 A, 0.019 ohm, SOIC, Surface Mount

SC16907

Power MOSFET, N Channel, 100 V, 7.5 A, 0.019 ohm, SOIC, Surface Mount

ONSEMI

The FDS3672 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems. • Low mille...

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N Channel 100V 7.5A 0.019ohm
SI2305CDS-T1-GE3
SI2305CDS-T1-GE3 - Power MOSFET, P Channel, 8 V, 5.8 A, 0.028 ohm, SOT-23, Surface Mount

SC16725

Power MOSFET, P Channel, 8 V, 5.8 A, 0.028 ohm, SOT-23, Surface Mount

VISHAY

The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 8V 5.8A 0.028ohm
IPP045N10N3GXKSA1
IPP045N10N3GXKSA1 - Power MOSFET, N Channel, 100 V, 100 A, 0.0039 ohm, TO-220, Through Hole

SC16948

Power MOSFET, N Channel, 100 V, 100 A, 0.0039 ohm, TO-220, Through Hole

INFINEON

The IPP045N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. • World's lowest RDS (ON)...

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N Channel 100V 100A 0.0039ohm
IRF530A
IRF530A - Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole

SC16916

Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole

ONSEMI

The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...

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N Channel 100V 14A 0.11ohm
SI7469DP-T1-E3
SI7469DP-T1-E3 - Power MOSFET, P Channel, 80 V, 28 A, 0.021 ohm, PowerPAK SO, Surface Mount

SC16866

Power MOSFET, P Channel, 80 V, 28 A, 0.021 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7469DP-T1-E3 is a -80V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definitio...

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P Channel 80V 28A 0.021ohm
STP40NF03L
STP40NF03L - Power MOSFET, N Channel, 30 V, 40 A, 0.022 ohm, TO-220, Through Hole

SC16918

Power MOSFET, N Channel, 30 V, 40 A, 0.022 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP40NF03L is a STripFETâ„¢ N-channel Power MOSFET developed using unique Single Feature Sizeâ„¢ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps th...

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N Channel 30V 40A 0.022ohm
BCP56-16,115
BCP56-16,115 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

SC16109

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD

NEXPERIA

The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...

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MJD44H11G
MJD44H11G - Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD

SC16077

Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...

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2N7002NXBKR
2N7002NXBKR - Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD

SC15955

Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 270mA • Drain Source On State Resistance : 2.2ohm

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N Channel 60V 270mA 2.2ohm
BC856B,215
BC856B,215 - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23

SC16009

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23

NEXPERIA

The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847

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STP45N65M5
STP45N65M5 - Power MOSFET, N Channel, 650V, 35A, 0.067 ohm, TO-220

SC15834

Power MOSFET, N Channel, 650V, 35A, 0.067 ohm, TO-220

STMICROELECTRONICS

The STP45N65M5 is a 650V N-channel MDmeshâ„¢ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESHâ„¢ horizontal layout structure. The MOSFET has extremely low on resistance, which is unmatch...

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N Channel 650V 35A 0.067ohm
IRF9310TRPBF
IRF9310TRPBF - Power MOSFET, P Channel, 30 V, 2 A, 0.0039 ohm, SOIC, Surface Mount

SC16838

Power MOSFET, P Channel, 30 V, 2 A, 0.0039 ohm, SOIC, Surface Mount

INFINEON

The IRF9310TRPBF is a HEXFET® single P-channel Power MOSFET for use with battery protection, high side and low side load switch, charge and discharge switch for Notebook PC battery application. • Low RDS (ON) (≤4.6mΩ) results in low conduction losses • Ind...

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P Channel 30V 2A 0.0039ohm
IRF6218STRLPBF
IRF6218STRLPBF - Power MOSFET, P Channel, 150 V, 27 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount

SC17010

Power MOSFET, P Channel, 150 V, 27 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF6218STRLPBF is a HEXFET® single P-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for reset switch for active clamp reset DC-to-DC converters. • Low gate-to-drain charge to redu...

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P Channel 150V 27A 0.12ohm
FQPF5N60C
FQPF5N60C - Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole

SC16973

Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole

ONSEMI

The FQPF5N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...

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N Channel 600V 4.5A 2.5ohm
MMBT2222A-7-F
MMBT2222A-7-F - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD

SC16034

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD

DIODES INC.

MMBT2222A-7-F is a 40V NPN small signal transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of moulded plastic, "Green" moulding compound (UL94V-0). The transistor is ideal for low-power...

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