Transistors
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RE1C002UNTCL
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SC15965 |
Power MOSFET, N Channel, 20V, 200mA, 0.8 Ohm, SOT-416FL, SMD ROHM • Channel Type : N Channel • Drain Source Voltage Vds : 20V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 0.8ohm
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N Channel | 20V | 200mA | 0.8ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX55-16,115
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SC16066 |
Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-89, SMD NEXPERIA The BCX55 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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IRFB4410ZPBF
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SC16934 |
Power MOSFET, N Channel, 100 V, 97 A, 0.008 ohm, TO-220AB, Through Hole INFINEON The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptibl...
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N Channel | 100V | 97A | 0.008ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR5305TRLPBF
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SC16940 |
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 31A | 0.065ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDV303N
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SC16700 |
SMD N Channel Power MOSFET, Digital FET, SOT-23, 680mA, 25V ONSEMI The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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N Channel | 25V | 680mA | 0.45ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33725BU
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SC15780 |
Transistor, Bipolar, NPN, 45V, 800mA, 625mW, TO92-3 ONSEMI The BC33725BU is a NPN Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC327
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FMMT718
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SC16023 |
Bipolar (BJT) Single Transistor, PNP, 20V, -1.5A, 625mW, SOT-23, SMD DIODES INC. The FMMT718 is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage. • 10A Peak pulse current • Excellent hFE characteristics up to 10A • Exhibits extremely low equivalent on resistance • NPN ...
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BC846B,215
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SC16007 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD NEXPERIA BC846B,215 is a 65V, 100mA NPN general purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C
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PDTC143ET,215
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SC15946 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 4.7 kohm NEXPERIA The PDTC143ET,215 is a NPN Resistor Equipped Transistor (RET) housed in small surface-mount plastic package. It offers built-in bias resistors and simplifies circuit design. It is designed for use with control of IC inputs, cost-saving alternative for BC84...
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BC847BLT3G
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SC16032 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI
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FDS3672
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SC16907 |
Power MOSFET, N Channel, 100 V, 7.5 A, 0.019 ohm, SOIC, Surface Mount ONSEMI The FDS3672 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems. • Low mille...
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N Channel | 100V | 7.5A | 0.019ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2305CDS-T1-GE3
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SC16725 |
Power MOSFET, P Channel, 8 V, 5.8 A, 0.028 ohm, SOT-23, Surface Mount VISHAY The SI2305CDS-T1-GE3 is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free
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P Channel | 8V | 5.8A | 0.028ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPP045N10N3GXKSA1
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SC16948 |
Power MOSFET, N Channel, 100 V, 100 A, 0.0039 ohm, TO-220, Through Hole INFINEON The IPP045N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. • World's lowest RDS (ON)...
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N Channel | 100V | 100A | 0.0039ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530A
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SC16916 |
Power MOSFET, N Channel, 100 V, 14 A, 0.11 ohm, TO-220, Through Hole ONSEMI The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge. • Extended safe operating area • Lower leakage current (10A maximum a...
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N Channel | 100V | 14A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7469DP-T1-E3
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SC16866 |
Power MOSFET, P Channel, 80 V, 28 A, 0.021 ohm, PowerPAK SO, Surface Mount VISHAY The SI7469DP-T1-E3 is a -80V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definitio...
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P Channel | 80V | 28A | 0.021ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP40NF03L
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SC16918 |
Power MOSFET, N Channel, 30 V, 40 A, 0.022 ohm, TO-220, Through Hole STMICROELECTRONICS The STP40NF03L is a STripFETâ„¢ N-channel Power MOSFET developed using unique Single Feature Sizeâ„¢ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps th...
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N Channel | 30V | 40A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP56-16,115
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SC16109 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 650mW, SOT-223, SMD NEXPERIA The BCP56 series 1A NPN Medium Power Transistor in a very small leadless surface-mount plastic package. • High current • Three current gain selections • High power dissipation capability • Exposed heat-sink for excellent thermal and electrical conductivity...
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MJD44H11G
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SC16077 |
Bipolar (BJT) Single Transistor, Audio, NPN, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD44H11G is a bipolar Power Transistor, designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead formed for surface mount application in plastic slee...
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2N7002NXBKR
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SC15955 |
Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 270mA • Drain Source On State Resistance : 2.2ohm
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N Channel | 60V | 270mA | 2.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B,215
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SC16009 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23 NEXPERIA The BC856B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847
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STP45N65M5
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SC15834 |
Power MOSFET, N Channel, 650V, 35A, 0.067 ohm, TO-220 STMICROELECTRONICS The STP45N65M5 is a 650V N-channel MDmeshâ„¢ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESHâ„¢ horizontal layout structure. The MOSFET has extremely low on resistance, which is unmatch...
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N Channel | 650V | 35A | 0.067ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9310TRPBF
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SC16838 |
Power MOSFET, P Channel, 30 V, 2 A, 0.0039 ohm, SOIC, Surface Mount INFINEON The IRF9310TRPBF is a HEXFET® single P-channel Power MOSFET for use with battery protection, high side and low side load switch, charge and discharge switch for Notebook PC battery application. • Low RDS (ON) (≤4.6mΩ) results in low conduction losses • Ind...
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P Channel | 30V | 2A | 0.0039ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF6218STRLPBF
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SC17010 |
Power MOSFET, P Channel, 150 V, 27 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF6218STRLPBF is a HEXFET® single P-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for reset switch for active clamp reset DC-to-DC converters. • Low gate-to-drain charge to redu...
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P Channel | 150V | 27A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF5N60C
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SC16973 |
Power MOSFET, N Channel, 600 V, 4.5 A, 2.5 ohm, TO-220F, Through Hole ONSEMI The FQPF5N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and wit...
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N Channel | 600V | 4.5A | 2.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2222A-7-F
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SC16034 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 300mW, SOT-23, SMD DIODES INC. MMBT2222A-7-F is a 40V NPN small signal transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of moulded plastic, "Green" moulding compound (UL94V-0). The transistor is ideal for low-power...
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