Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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ZXM61N03F
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SC16868 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61N03F is a N-channel enhancement mode MOSFET uses diodes proprietary, high density, uses advanced trench technology. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage an...
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N Channel | 30V | 1.4A | 0.22ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMV65XP,215
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SC16826 |
Power MOSFET, P Channel, 20 V, 4.3 A, 0.058 ohm, TO-236AB, Surface Mount NEXPERIA The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low Threshold Voltage • Low On-state Resistance
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P Channel | 20V | 4.3A | 0.058ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJE3055T
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SC15821 |
Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220 STMICROELECTRONICS The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...
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TIP32CG
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SC15738 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB ONSEMI The TIP32CG is a bipolar PNP Power Transistor designed for use in general purpose amplifier and switching applications. • Complementary device
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IRF100B201
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SC16963 |
Power MOSFET, N Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole INFINEON HEXFET® power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redunda...
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1+ €1.9397 (€2.39) 10+ €1.547 (€1.90) 100+ €1.3804 (€1.70) |
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N Channel | 100V | 192A | 0.0035ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904LT1G
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SC15980 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...
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MUN5211DW1T1G
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SC15948 |
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...
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NX2301P,215
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SC16710 |
Power MOSFET, P Channel, 20 V, 2 A, 0.1 ohm, SOT-23, Surface Mount NEXPERIA The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • 1.8V RDSon rated for Low Voltage Gate Drive • Very Fast Switching • AEC-Q101 Qualified
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P Channel | 20V | 2A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF520PBF
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SC16914 |
Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole VISHAY The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout t...
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N Channel | 100V | 9.2A | 0.27ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP20NM50
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SC16982 |
Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole STMICROELECTRONICS The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...
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N Channel | 550V | 20A | 0.25ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008PBK,215
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SC16776 |
Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount NEXPERIA The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...
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P Channel | 30V | 230mA | 2.8ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J175-D26Z
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SC15910 |
JFET Transistor, JFET, 30V, -7mA, -60mA, 6V, TO-92 ONSEMI The J175_D26Z is a P-channel Switch designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. It is sourced from process 88.
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV32UP,215
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SC16848 |
Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount NEXPERIA The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...
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P Channel | 20V | 4A | 0.032ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBTA45,215
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SC16055 |
Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD NEXPERIA The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...
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BSS123-7-F
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SC16705 |
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount DIODES INC. The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...
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N Channel | 100V | 170mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002WT1G
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SC16709 |
Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount ONSEMI The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...
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N Channel | 60V | 340mA | 1.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2361ES-T1_GE3
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SC15964 |
Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 2.8A | 0.13ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC5200
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SC15763 |
Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P TOSHIBA The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...
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TIP150
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SC15740 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220 MULTICOMP PRO The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...
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BC517-D74Z
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SC15804 |
Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92 ONSEMI
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IRLR7843TRPBF
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SC17008 |
Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount INFINEON The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...
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N Channel | 30V | 161A | 0.0026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT2907A-7-F
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SC16060 |
Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD DIODES INC. The MMBT2907A-7-F is a PNP small signal Bipolar Transistor offers -600mA collector current and -60V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MMBT2222A...
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SI2374DS-T1-GE3
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SC16793 |
Power MOSFET, N Channel, 20V, 5.9A, 0.025 Ohm, SOT-23, SMD VISHAY The SI2374DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for load switches and power management applications. • TrenchFET® power MOSFET • 100% tested
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N Channel | 20V | 5.9A | 0.025ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905STRLPBF
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SC16867 |
Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF4905STRLPBF is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliabl...
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P Channel | 55V | 74A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N5416
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SC15811 |
Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39 MULTICOMP PRO The 2N5416 is a -300V Silicon PNP High Voltage Transistor ideal for high speed switching and linear amplifier appliances in military, industrial and commercial equipment. • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp P...
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