Transistors

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ZXM61N03F
ZXM61N03F - Power MOSFET, N Channel, 30 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount

SC16868

Power MOSFET, N Channel, 30 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61N03F is a N-channel enhancement mode MOSFET uses diodes proprietary, high density, uses advanced trench technology. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage an...

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N Channel 30V 1.4A 0.22ohm
PMV65XP,215
PMV65XP,215 - Power MOSFET, P Channel, 20 V, 4.3 A, 0.058 ohm, TO-236AB, Surface Mount

SC16826

Power MOSFET, P Channel, 20 V, 4.3 A, 0.058 ohm, TO-236AB, Surface Mount

NEXPERIA

The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low Threshold Voltage • Low On-state Resistance

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P Channel 20V 4.3A 0.058ohm
MJE3055T
MJE3055T - Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220

SC15821

Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220

STMICROELECTRONICS

The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...

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TIP32CG
TIP32CG - Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB

SC15738

Bipolar (BJT) Single Transistor, General Purpose, PNP, 100V, 3A, 40W, TO-220AB

ONSEMI

The TIP32CG is a bipolar PNP Power Transistor designed for use in general purpose amplifier and switching applications. • Complementary device

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IRF100B201
IRF100B201 - Power MOSFET, N Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole

SC16963

Power MOSFET, N Channel, 100 V, 192 A, 0.0035 ohm, TO-220AB, Through Hole

INFINEON

HEXFET® power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redunda...

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N Channel 100V 192A 0.0035ohm
MMBT3904LT1G
MMBT3904LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD

SC15980

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 200mA, 225mW, SOT-23, SMD

ONSEMI

MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor. • Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0) • Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C) • Emitter-base...

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MUN5211DW1T1G
MUN5211DW1T1G - Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm

SC15948

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm

ONSEMI

The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...

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NX2301P,215
NX2301P,215 - Power MOSFET, P Channel, 20 V, 2 A, 0.1 ohm, SOT-23, Surface Mount

SC16710

Power MOSFET, P Channel, 20 V, 2 A, 0.1 ohm, SOT-23, Surface Mount

NEXPERIA

The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • 1.8V RDSon rated for Low Voltage Gate Drive • Very Fast Switching • AEC-Q101 Qualified

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P Channel 20V 2A 0.1ohm
IRF520PBF
IRF520PBF - Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole

SC16914

Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole

VISHAY

The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout t...

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N Channel 100V 9.2A 0.27ohm
STP20NM50
STP20NM50 - Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole

SC16982

Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performa...

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N Channel 550V 20A 0.25ohm
NX3008PBK,215
NX3008PBK,215 - Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount

SC16776

Power MOSFET, P Channel, 30 V, 230 mA, 2.8 ohm, SOT-23, Surface Mount

NEXPERIA

The NX3008PBK is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast ...

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P Channel 30V 230mA 2.8ohm
J175-D26Z
J175-D26Z - JFET Transistor, JFET, 30V, -7mA, -60mA, 6V, TO-92

SC15910

JFET Transistor, JFET, 30V, -7mA, -60mA, 6V, TO-92

ONSEMI

The J175_D26Z is a P-channel Switch designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. It is sourced from process 88.

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P Channel - - -
PMV32UP,215
PMV32UP,215 - Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount

SC16848

Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • 1.8V Drain-...

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P Channel 20V 4A 0.032ohm
PMBTA45,215
PMBTA45,215 - Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD

SC16055

Bipolar (BJT) Single Transistor, NPN, 500V, 150mA, 300mW, SOT-23, SMD

NEXPERIA

The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module...

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BSS123-7-F
BSS123-7-F - Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

SC16705

Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

DIODES INC.

The BSS123-7-F is a N-channel Enhancement Mode MOSFET uses diodes proprietary, high density and uses advanced trench technology. Matte tin finish annealed over alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize...

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N Channel 100V 170mA 6ohm
2N7002WT1G
2N7002WT1G - Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount

SC16709

Power MOSFET, N Channel, 60 V, 340 mA, 1.19 ohm, SOT-323, Surface Mount

ONSEMI

The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA ...

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N Channel 60V 340mA 1.19ohm
SQ2361ES-T1_GE3
SQ2361ES-T1_GE3 - Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD

SC15964

Power MOSFET, P Channel, 60V, 2.8A, 0.13 Ohm, SOT-23, SMD

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 2.8A 0.13ohm
TTC5200
TTC5200 - Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P

SC15763

Bipolar (BJT) Single Transistor, NPN, 230V, 15A, 150W, TO-3P

TOSHIBA

The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification. • Collector to emitter voltage (Vce) is 230V • Collector to base voltage of 230V • Collect...

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TIP150
TIP150 - Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220

SC15740

Bipolar (BJT) Single Transistor, Darlington, NPN, 300V, 7A, 80W, TO-220

MULTICOMP PRO

The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation. • Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum) • Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A) • Mul...

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BC517-D74Z
BC517-D74Z - Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92

SC15804

Bipolar (BJT) Single Transistor, NPN, 30V, 1.2A, 625mW, TO-92

ONSEMI

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IRLR7843TRPBF
IRLR7843TRPBF - Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount

SC17008

Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount

INFINEON

The IRLR7843TRPBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter wi...

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N Channel 30V 161A 0.0026ohm
MMBT2907A-7-F
MMBT2907A-7-F - Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD

SC16060

Bipolar (BJT) Single Transistor, PNP, 60V, 600mA, 300mW, SOT-23, SMD

DIODES INC.

The MMBT2907A-7-F is a PNP small signal Bipolar Transistor offers -600mA collector current and -60V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MMBT2222A...

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SI2374DS-T1-GE3
SI2374DS-T1-GE3 - Power MOSFET, N Channel, 20V, 5.9A, 0.025 Ohm, SOT-23, SMD

SC16793

Power MOSFET, N Channel, 20V, 5.9A, 0.025 Ohm, SOT-23, SMD

VISHAY

The SI2374DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for load switches and power management applications. • TrenchFET® power MOSFET • 100% tested

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N Channel 20V 5.9A 0.025ohm
IRF4905STRLPBF
IRF4905STRLPBF - Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount

SC16867

Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF4905STRLPBF is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliabl...

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P Channel 55V 74A 0.02ohm
2N5416
2N5416 - Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39

SC15811

Bipolar (BJT) Single Transistor, PNP, -300V, -1A, 1W, TO-39

MULTICOMP PRO

The 2N5416 is a -300V Silicon PNP High Voltage Transistor ideal for high speed switching and linear amplifier appliances in military, industrial and commercial equipment. • Collector-base voltage(Vcbo = 350V) • Emitter-base voltage(Vebo = 6V) • Multicomp P...

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