Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2302UK-7
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SC15945 |
Power MOSFET, N Channel, 20V, 2.8A, 0.061 ohm, SOT-23, SMD DIODES INC. DMG2302UK-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications ...
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N Channel | 20V | 2.8A | 0.09ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT458
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SC16056 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC. FMMT458 is a NPN high voltage transistor in a 3 pin SOT23 package. • BVCEO is greater than 400V • IC = 225mA high continuous collector current • ICM = 1A peak pulse current • 500mW power dissipation • Excellent hFE characteristics up to 100mA • Complementa...
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NTR5103NT1G
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SC15962 |
Power MOSFET, N Channel, 60V, 260mA, 1 Ohm, SOT-23, SMD ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 260mA • Drain Source On State Resistance : 1ohm
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N Channel | 60V | 260mA | 1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP3055VL
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SC16970 |
Power MOSFET, N Channel, 60 V, 12 A, 0.1 ohm, TO-220AB, Through Hole ONSEMI The MTP3055VL is a N-channel Logic Level MOSFET designed specifically for low voltage, high speed switching applications. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is ...
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N Channel | 60V | 12A | 0.1ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC846BLT3G
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SC16046 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 225mW, SOT-23, SMD ONSEMI
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BST82,215
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SC16712 |
Power MOSFET, N Channel, 100 V, 190 mA, 10 ohm, SOT-23, Surface Mount NEXPERIA The BST82 is a N-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Suitable for high speed line driver and logic level translator. • Logic-level compatible • Very fast switching
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N Channel | 100V | 190mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138DW-7-F
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SC15998 |
Dual MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-363, SMD DIODES INC. The BSS138DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for load switch applications. • Low ON-resistance • Low gate threshold volt...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7103TRPBF
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SC16693 |
SMD Dual N Channel MOSFET Transistor, SOIC, 50V, 3A INFINEON The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of ...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PDTD123YT,215
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SC15947 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 500mA, 2.2 kohm, 10 kohm NEXPERIA The PDTD123YT is a 2.2 to 10kΩ NPN Resistor Equipped Transistor (RET) in a surface-mount plastic package. • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place costs • ±10% Resistor ratio tolerance • PNP c...
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NTD3055L104T4G
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SC16885 |
Power MOSFET, N Channel, 60 V, 12 A, 0.089 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD3055L104T4G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS (ON) • Lower VDS (ON) • Lower and tighter VSD • Lower diode r...
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N Channel | 60V | 12A | 0.089ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUM110P08-11L-E3
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SC16891 |
Power MOSFET, P Channel, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM110P08-11L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 80V | 110A | 0.0093ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP4A16GTA
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SC16849 |
Power MOSFET, P Channel, 40 V, 6.4 A, 0.06 ohm, SOT-223, Surface Mount DIODES INC. The ZXMP4A16GTA is a -40V P-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low input capacitance • Low on-r...
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P Channel | 40V | 6.4A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC640TA
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SC15792 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 1W, TO-92 ONSEMI The BC640TA is a PNP Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • Complement to BC639 • -55 to 150°C Operating junction temperature range
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FMMT591A
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SC16064 |
Transistor, PNP, SOT23 DIODES INC. The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A. • FMMT491A Complementary NPN type • -55 to 150°C Operating temperature range
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CSD18543Q3AT
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SC16685 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 35A TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 35A • Drain Source On State Resistance : 0.0081ohm
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N Channel | 60V | 35A | 0.0081ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMS6004FFTA
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SC16713 |
Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount DIODES INC. ZXMS6004FFTA is an INTELLIFET™ N-channel self protected enhancement mode MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a gener...
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N Channel | 60V | 2A | 0.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7319TRPBF
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SC16802 |
Dual MOSFET, Complementary N and P Channel, 30V, 6.5A, 0.023 Ohm, SOIC, Surface Mount INFINEON • Generation V Technology • Ultra low On-Resistance
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBFJ113
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SC15915 |
JFET Transistor, JFET, -35 V, -3 V, SOT-23, 3 Pin, 150 °C ONSEMI The MMBFJ113 is a N-channel JFET Switch designed for low level analogue switching, sample and holds circuits, chopper stabilized amplifiers. • Interchangeable source and drain • 35V Drain-gate voltage • -35V Gate-source voltage • 50mA Forward gate current
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC850CLT1G
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SC16098 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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MMBFJ201
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SC15914 |
JFET Transistor, -40V, 200uA, 1mA, -1.5V, SOT-23 ONSEMI The MMBFJ201 is a 40V N-channel Junction (JFET) Field Effect Transistor designed primarily for low level audio and general purpose applications with high impedance signal sources. This product is general usage and suitable for many different applications. ...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD20P06LT4G
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SC16990 |
Power MOSFET, P Channel, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes. • Low gate charge for fast swi...
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P Channel | 60V | 15.5A | 0.143ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSA992FBU
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SC15794 |
Bipolar (BJT) Single Transistor, PNP, -120V, -50mA, 500mW, TO-226AA ONSEMI The KSA992FBU is a PNP Epitaxial Silicon Transistor offers -120V collector base voltage and -50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSC1845
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FMMT491
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SC16093 |
Bipolar (BJT) Single Transistor, NPN, 60V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT491 is a NPN silicon planar medium power Bipolar Transistor offers 210mΩ low equivalent ON-resistance RCE (sat) at 1A. • FMMT591 Complementary type • -55 to 150°C Operating temperature range
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BC63916-D27Z
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SC15791 |
Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA ONSEMI The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • -55 to 150°C Operating junction temperature range
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NTR4501NT1G
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SC16717 |
Power MOSFET, N Channel, 20 V, 3.2 A, 0.08 ohm, SOT-23, Surface Mount ONSEMI The NTR4501NT1G is a 20V N-channel Power MOSFET with leading planar technology for low gate charge/fast switching. It is suitable with DC-DC conversion, load/power switch for portables and computing. • 2.5V Rated for low voltage gate drive • ±12V Gate to s...
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N Channel | 20V | 3.2A | 0.08ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||