Transistors

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BC817K-25VL
BC817K-25VL - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

SC15932

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD

NEXPERIA

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DMG2301L-7
DMG2301L-7 - Power MOSFET, P Channel, 20V, 3A, 0.12 Ohm, SOT-23, SMD

SC15969

Power MOSFET, P Channel, 20V, 3A, 0.12 Ohm, SOT-23, SMD

DIODES INC.

DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...

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P Channel 20V 3A 0.12ohm
DMG1013T-7
DMG1013T-7 - SMD P Channel Power MOSFET, 20V, 460mA, 0.5 Ohm, SOT-523

SC16829

SMD P Channel Power MOSFET, 20V, 460mA, 0.5 Ohm, SOT-523

DIODES INC.

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC/DC converters, load switch and power ...

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P Channel 20V 460mA 0.5ohm
BSS84AKW,115
BSS84AKW,115 - Power MOSFET, P Channel, 50 V, 150 mA, 4.5 ohm, SOT-323, Surface Mount

SC16842

Power MOSFET, P Channel, 50 V, 150 mA, 4.5 ohm, SOT-323, Surface Mount

NEXPERIA

The BSS84AKW is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The P-channel MOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications. ...

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P Channel 50V 150mA 4.5ohm
IRLB8314PBF
IRLB8314PBF - Power MOSFET, N Channel, 30 V, 171 A, 0.0024 ohm, TO-220AB, Through Hole

SC16927

Power MOSFET, N Channel, 30 V, 171 A, 0.0024 ohm, TO-220AB, Through Hole

INFINEON

IRLB8314PBF is a HEXFET® power MOSFET. Application includes optimized for UPS/inverter applications, low voltage power tools. • Best in Class performance for UPS/Inverter applications • Ultra-low gate impedance, fully characterized avalanche voltage and cu...

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N Channel 30V 171A 0.0024ohm
BC559CTA
BC559CTA - Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 500mW, TO-92

SC15790

Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 500mW, TO-92

ONSEMI

The BC559CTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC549

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FDV301N
FDV301N - SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA

SC16698

SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA

ONSEMI

The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...

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N Channel 25V 220mA 4ohm
IRFB4127PBF
IRFB4127PBF - Power MOSFET, N Channel, 200 V, 76 A, 0.017 ohm, TO-220AB, Through Hole

SC16988

Power MOSFET, N Channel, 200 V, 76 A, 0.017 ohm, TO-220AB, Through Hole

INFINEON

Single N-channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications. • Improved gate, avalanche and dynami...

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N Channel 200V 76A 0.017ohm
DMG1012UW-7
DMG1012UW-7 - Power MOSFET, N Channel, 20V, 1A, 0.3 Ohm, SOT-323, SMD

SC15960

Power MOSFET, N Channel, 20V, 1A, 0.3 Ohm, SOT-323, SMD

DIODES INC.

DMG1012UW-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source ...

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N Channel 20V 1A 0.45ohm
BCW66G
BCW66G - Bipolar Transistor, NPN, 45V, 800mA, SOT-23

SC15372

Bipolar Transistor, NPN, 45V, 800mA, SOT-23

MULTICOMP PRO

• Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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ZXM61P03F
ZXM61P03F - Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount

SC16786

Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount

DIODES INC.

The ZXM61P03F is a P-channel enhancement mode MOSFET from Zetex utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications....

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P Channel 30V 1.1A 0.35ohm
IRFR5505TRPBF
IRFR5505TRPBF - Power MOSFET, P Channel, 55 V, 18 A, 0.11 ohm, TO-252AA, Surface Mount

SC16813

Power MOSFET, P Channel, 55 V, 18 A, 0.11 ohm, TO-252AA, Surface Mount

INFINEON

The IRFR5505TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...

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P Channel 55V 18A 0.11ohm
FDS6679AZ
FDS6679AZ - Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount

SC16900

Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount

ONSEMI

The FDS6679AZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs. • High perfo...

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P Channel 30V 13A 0.0077ohm
IRF5210STRLPBF
IRF5210STRLPBF - Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount

SC16815

Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount

INFINEON

The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient ...

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P Channel 100V 38A 0.06ohm
IRF730PBF
IRF730PBF - N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB

SC16902

N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB

VISHAY

• Dynamic dV/dt rating • Repetitive avalanche rated • 150°C Operating temperature • Easy to parallel • Simple drive requirement

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N Channel 400V 5.5A 1ohm
IRF9510PBF
IRF9510PBF - Power MOSFET, P Channel, 100 V, 3 A, 1.2 ohm, TO-220AB, Through Hole

SC16944

Power MOSFET, P Channel, 100 V, 3 A, 1.2 ohm, TO-220AB, Through Hole

VISHAY

The IRF9510PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximate...

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P Channel 100V 3A 1.2ohm
NX3008NBK,215
NX3008NBK,215 - Power MOSFET, Trench, N Channel, 30 V, 400 mA, 1 ohm, SOT-23, Surface Mount

SC16715

Power MOSFET, Trench, N Channel, 30 V, 400 mA, 1 ohm, SOT-23, Surface Mount

NEXPERIA

The NX3008NBK from NXP is a surface mount, 30V N channel enhancement mode field effect transistor in SOT-23 (TO-236AB) package using TrenchMOS technology. This transistor features very high speed switching, low threshold voltage and ESD protection up to 2K...

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N Channel 30V 400mA 1ohm
IRFP9140NPBF
IRFP9140NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

SC17021

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

INFINEON

The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

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P Channel 100V 23A 0.117ohm
BC557ATA
BC557ATA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15788

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557ATA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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BSS138W
BSS138W - Power MOSFET, N Channel, 50V, 210mA, 1.17 Ohm, SOT-323, SMD

SC16001

Power MOSFET, N Channel, 50V, 210mA, 1.17 Ohm, SOT-323, SMD

ONSEMI

The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers an...

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N Channel 50V 210mA 1.17ohm
DMN6140L-13
DMN6140L-13 - Power MOSFET, N Channel, 60V, 1.6A, 0.092 Ohm, SOT-23, SMD

SC15973

Power MOSFET, N Channel, 60V, 1.6A, 0.092 Ohm, SOT-23, SMD

DIODES INC.

DMN6140L-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical...

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N Channel 60V 1.6A 0.092ohm
BSS84LT1G
BSS84LT1G - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

SC16708

Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount

ONSEMI

The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications.

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P Channel 50V 130mA 10ohm
NX3008NBKW,115
NX3008NBKW,115 - Power MOSFET, N Channel, 30 V, 350 mA, 1 ohm, SOT-323, Surface Mount

SC16748

Power MOSFET, N Channel, 30 V, 350 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The NX3008NBKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast...

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N Channel 30V 350mA 1ohm
DMP1045U
DMP1045U - Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.026 ohm, SOT-23, Surface Mount

SC16904

Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.026 ohm, SOT-23, Surface Mount

DIODES INC.

The DMP1045U from Diode Inc is a surface mount, P channel enhancement mode MOSFET in SOT-23 package. This device features low on resistance, low input capacitance, fast switching speed and low input/output leakage thus it is ideal for high efficiency power...

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P Channel 12V 5.2A 0.026ohm
BC32740BU
BC32740BU - Bipolar (BJT) Single Transistor, PNP, -45V, -800mA, 625mW, TO-92

SC15779

Bipolar (BJT) Single Transistor, PNP, -45V, -800mA, 625mW, TO-92

ONSEMI

The BC32740BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337

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