Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BC817K-25VL
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SC15932 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 350mW, TO-236AB, SMD NEXPERIA
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DMG2301L-7
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SC15969 |
Power MOSFET, P Channel, 20V, 3A, 0.12 Ohm, SOT-23, SMD DIODES INC. DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications in...
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P Channel | 20V | 3A | 0.12ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMG1013T-7
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SC16829 |
SMD P Channel Power MOSFET, 20V, 460mA, 0.5 Ohm, SOT-523 DIODES INC. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC/DC converters, load switch and power ...
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P Channel | 20V | 460mA | 0.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84AKW,115
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SC16842 |
Power MOSFET, P Channel, 50 V, 150 mA, 4.5 ohm, SOT-323, Surface Mount NEXPERIA The BSS84AKW is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The P-channel MOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications. ...
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P Channel | 50V | 150mA | 4.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLB8314PBF
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SC16927 |
Power MOSFET, N Channel, 30 V, 171 A, 0.0024 ohm, TO-220AB, Through Hole INFINEON IRLB8314PBF is a HEXFET® power MOSFET. Application includes optimized for UPS/inverter applications, low voltage power tools. • Best in Class performance for UPS/Inverter applications • Ultra-low gate impedance, fully characterized avalanche voltage and cu...
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N Channel | 30V | 171A | 0.0024ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC559CTA
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SC15790 |
Bipolar (BJT) Single Transistor, PNP, -30V, -100mA, 500mW, TO-92 ONSEMI The BC559CTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC549
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FDV301N
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SC16698 |
SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA ONSEMI The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...
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N Channel | 25V | 220mA | 4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4127PBF
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SC16988 |
Power MOSFET, N Channel, 200 V, 76 A, 0.017 ohm, TO-220AB, Through Hole INFINEON Single N-channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications. • Improved gate, avalanche and dynami...
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N Channel | 200V | 76A | 0.017ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1012UW-7
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SC15960 |
Power MOSFET, N Channel, 20V, 1A, 0.3 Ohm, SOT-323, SMD DIODES INC. DMG1012UW-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source ...
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N Channel | 20V | 1A | 0.45ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCW66G
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SC15372 |
Bipolar Transistor, NPN, 45V, 800mA, SOT-23 MULTICOMP PRO • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend
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ZXM61P03F
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SC16786 |
Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount DIODES INC. The ZXM61P03F is a P-channel enhancement mode MOSFET from Zetex utilizes an unique structure combining the benefits of low on-state resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications....
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P Channel | 30V | 1.1A | 0.35ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR5505TRPBF
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SC16813 |
Power MOSFET, P Channel, 55 V, 18 A, 0.11 ohm, TO-252AA, Surface Mount INFINEON The IRFR5505TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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P Channel | 55V | 18A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS6679AZ
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SC16900 |
Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount ONSEMI The FDS6679AZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs. • High perfo...
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P Channel | 30V | 13A | 0.0077ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF5210STRLPBF
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SC16815 |
Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount INFINEON The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient ...
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P Channel | 100V | 38A | 0.06ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF730PBF
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SC16902 |
N Channel Power MOSFET, 400V, 5.5A, 1 Ohm, TO-220AB VISHAY • Dynamic dV/dt rating • Repetitive avalanche rated • 150°C Operating temperature • Easy to parallel • Simple drive requirement
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N Channel | 400V | 5.5A | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9510PBF
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SC16944 |
Power MOSFET, P Channel, 100 V, 3 A, 1.2 ohm, TO-220AB, Through Hole VISHAY The IRF9510PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximate...
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P Channel | 100V | 3A | 1.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBK,215
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SC16715 |
Power MOSFET, Trench, N Channel, 30 V, 400 mA, 1 ohm, SOT-23, Surface Mount NEXPERIA The NX3008NBK from NXP is a surface mount, 30V N channel enhancement mode field effect transistor in SOT-23 (TO-236AB) package using TrenchMOS technology. This transistor features very high speed switching, low threshold voltage and ESD protection up to 2K...
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N Channel | 30V | 400mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP9140NPBF
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SC17021 |
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole INFINEON The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
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P Channel | 100V | 23A | 0.117ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557ATA
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SC15788 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557ATA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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BSS138W
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SC16001 |
Power MOSFET, N Channel, 50V, 210mA, 1.17 Ohm, SOT-323, SMD ONSEMI The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers an...
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N Channel | 50V | 210mA | 1.17ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN6140L-13
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SC15973 |
Power MOSFET, N Channel, 60V, 1.6A, 0.092 Ohm, SOT-23, SMD DIODES INC. DMN6140L-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical...
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N Channel | 60V | 1.6A | 0.092ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84LT1G
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SC16708 |
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount ONSEMI The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications.
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P Channel | 50V | 130mA | 10ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBKW,115
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SC16748 |
Power MOSFET, N Channel, 30 V, 350 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The NX3008NBKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications. • Very fast...
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N Channel | 30V | 350mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP1045U
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SC16904 |
Power MOSFET, Enhancement Mode, P Channel, 12 V, 5.2 A, 0.026 ohm, SOT-23, Surface Mount DIODES INC. The DMP1045U from Diode Inc is a surface mount, P channel enhancement mode MOSFET in SOT-23 package. This device features low on resistance, low input capacitance, fast switching speed and low input/output leakage thus it is ideal for high efficiency power...
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P Channel | 12V | 5.2A | 0.026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC32740BU
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SC15779 |
Bipolar (BJT) Single Transistor, PNP, -45V, -800mA, 625mW, TO-92 ONSEMI The BC32740BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337
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