Transistors
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BC327.25
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SC15365 |
Bipolar Transistor, PNP, 45V, 800mA, TO-92 MULTICOMP PRO The BC327.25 is a PNP silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limite...
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IRFB3607PBF
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SC16895 |
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole INFINEON The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...
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N Channel | 75V | 80A | 0.00734ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC850B,215
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SC16043 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC850B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • PNP complements are BC859 and BC860 • 2F Marking code
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SI2365EDS-T1-GE3
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SC16859 |
SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23 VISHAY • Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V
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P Channel | 20V | 5.9A | 0.0265ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138-7-F
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SC15996 |
Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD DIODES INC. The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switc...
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N Channel | 50V | 200mA | 3.5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-40,215..
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SC16035 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, TO-236AB NEXPERIA The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement
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DMC2400UV-7
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SC16695 |
SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A DIODES INC. DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effic...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2336DS-T1-GE3
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SC16781 |
Power MOSFET, N Channel, 30 V, 5.2 A, 0.034 ohm, SOT-23, Surface Mount VISHAY • N-channel 30V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, boost converters
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N Channel | 30V | 5.2A | 0.034ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138W-7-F
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SC16004 |
Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-323, SMD DIODES INC. The BSS138W-7-F is a N-channel enhancement-mode DMOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • F...
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N Channel | 50V | 200mA | 3.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491A
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SC16062 |
Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT491A is a NPN silicon planar medium Power Transistor with matte tin plated leads and UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard, very low equivalent resistance. • Level-1 per J-STD-020 moi...
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BC857BW,115
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SC16018 |
Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC857BW,115 is a PNP General Purpose Transistor in a plastic package. It is suitable for use in General Purpose switching and amplification. • NPN complements are BC846W, BC847W and BC848W • 3F Marking code
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BC847CLT1G
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SC16048 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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2N6107
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SC15754 |
Bipolar (BJT) Single Transistor, PNP, 70V, 7A, 40W, TO-220AB MULTICOMP PRO The 2N6107 is a rugged and reliable transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability a...
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2N7002PW,115
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SC15988 |
Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD NEXPERIA The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified
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N Channel | 60V | 310mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2244TRPBF
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SC16759 |
Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount INFINEON The IRLML2244TRPBF is a P-channel HEXFET® Power MOSFET compatible with existing surface mount techniques. This transistor features lower switching losses, increased reliability and environmentally friendly. • Multi-vendor compatibility • Industry standard ...
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P Channel | 20V | 4.3A | 0.042ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGH30S130P
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SC15922 |
IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247 ONSEMI
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FDN306P
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SC16722 |
Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount ONSEMI The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. • Fast switching • High performance trench technology for extremely low RDS
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P Channel | 12V | 2.6A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS84AK,215
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SC16767 |
Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount NEXPERIA The BSS84AK is a P-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Logic-level compatible and very fast switching. Suitable for relay driver and high-speed line driver. • AEC-Q101 Qualified ...
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P Channel | 50V | 180mA | 4.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUK9875-100A/CUX
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SC15953 |
Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD NEXPERIA • Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 7A • Drain Source On State Resistance : 0.062ohm
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N Channel | 100V | 7A | 0.062ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP55NF06
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SC15840 |
Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220 STMICROELECTRONICS The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...
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N Channel | 60V | 50A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846B
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SC16038 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC846B is a NPN general purpose Transistor in surface mounted device (SMD) plastic package. Designed for use in switching and amplification applications. Ideal for AF input stages and driver applications. • High current gain • Excellent hfe linearity •...
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NDS331N
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SC16701 |
SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A ONSEMI The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...
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N Channel | 20V | 1.3A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138BKW,115
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SC16779 |
Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount NEXPERIA The BSS138BKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit application...
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N Channel | 60V | 320mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD32CG
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SC16114 |
Bipolar (BJT) Single Transistor, PNP, 100V, 3A, 15W, TO-252 (DPAK) ONSEMI The MJD32CG is a 3A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications. • Electrically similar to popular TIP31 and TIP32 series • AEC-Q101 qualified and PPAP capable
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FJP13009H2TU
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SC15758 |
Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220 ONSEMI The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipati...
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