Transistors

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BC327.25
BC327.25 - Bipolar Transistor, PNP, 45V, 800mA, TO-92

SC15365

Bipolar Transistor, PNP, 45V, 800mA, TO-92

MULTICOMP PRO

The BC327.25 is a PNP silicon Planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier. • 200°C/W Junction to Ambient in Free Air Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limite...

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IRFB3607PBF
IRFB3607PBF - Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

SC16895

Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible ...

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N Channel 75V 80A 0.00734ohm
BC850B,215
BC850B,215 - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD

SC16043

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC850B is a NPN General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • PNP complements are BC859 and BC860 • 2F Marking code

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SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 - SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23

SC16859

SMD P Channel Power MOSFET, 20V, 5.9A, 0.0265 Ohm, SOT-23

VISHAY

• Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V

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P Channel 20V 5.9A 0.0265ohm
BSS138-7-F
BSS138-7-F - Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD

SC15996

Power MOSFET, N Channel, 50V, 200mA, 1.4 Ohm, SOT-23, SMD

DIODES INC.

The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switc...

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N Channel 50V 200mA 3.5ohm
BC817-40,215..
BC817-40,215.. - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, TO-236AB

SC16035

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 250mW, TO-236AB

NEXPERIA

The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement

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DMC2400UV-7
DMC2400UV-7 - SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A

SC16695

SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A

DIODES INC.

DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effic...

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Complementary N and P Channel - - -
SI2336DS-T1-GE3
SI2336DS-T1-GE3 - Power MOSFET, N Channel, 30 V, 5.2 A, 0.034 ohm, SOT-23, Surface Mount

SC16781

Power MOSFET, N Channel, 30 V, 5.2 A, 0.034 ohm, SOT-23, Surface Mount

VISHAY

• N-channel 30V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, boost converters

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N Channel 30V 5.2A 0.034ohm
BSS138W-7-F
BSS138W-7-F - Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-323, SMD

SC16004

Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-323, SMD

DIODES INC.

The BSS138W-7-F is a N-channel enhancement-mode DMOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. • Low ON-resistance • Low gate threshold voltage • Low input capacitance • F...

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N Channel 50V 200mA 3.5ohm
FMMT491A
FMMT491A - Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 500mW, SOT-23, SMD

SC16062

Bipolar (BJT) Single Transistor, NPN, 40V, 1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT491A is a NPN silicon planar medium Power Transistor with matte tin plated leads and UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard, very low equivalent resistance. • Level-1 per J-STD-020 moi...

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BC857BW,115
BC857BW,115 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 200mW, SOT-323, SMD

SC16018

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 200mW, SOT-323, SMD

NEXPERIA

The BC857BW,115 is a PNP General Purpose Transistor in a plastic package. It is suitable for use in General Purpose switching and amplification. • NPN complements are BC846W, BC847W and BC848W • 3F Marking code

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BC847CLT1G
BC847CLT1G - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD

SC16048

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC847CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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2N6107
2N6107 - Bipolar (BJT) Single Transistor, PNP, 70V, 7A, 40W, TO-220AB

SC15754

Bipolar (BJT) Single Transistor, PNP, 70V, 7A, 40W, TO-220AB

MULTICOMP PRO

The 2N6107 is a rugged and reliable transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability a...

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2N7002PW,115
2N7002PW,115 - Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD

SC15988

Power MOSFET, N Channel, 60V, 310mA, 1 Ohm, SOT-323, SMD

NEXPERIA

The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 310mA 1ohm
IRLML2244TRPBF
IRLML2244TRPBF - Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount

SC16759

Power MOSFET, P Channel, 20 V, 4.3 A, 0.042 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2244TRPBF is a P-channel HEXFET® Power MOSFET compatible with existing surface mount techniques. This transistor features lower switching losses, increased reliability and environmentally friendly. • Multi-vendor compatibility • Industry standard ...

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P Channel 20V 4.3A 0.042ohm
FGH30S130P
FGH30S130P - IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247

SC15922

IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247

ONSEMI

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FDN306P
FDN306P - Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount

SC16722

Power MOSFET, P Channel, 12 V, 2.6 A, 0.04 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. • Fast switching • High performance trench technology for extremely low RDS

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P Channel 12V 2.6A 0.04ohm
BSS84AK,215
BSS84AK,215 - Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount

SC16767

Power MOSFET, P Channel, 50 V, 180 mA, 4.5 ohm, SOT-23, Surface Mount

NEXPERIA

The BSS84AK is a P-channel enhancement mode Field-Effect Transistor in surface mount plastic package using Trench MOSFET technology. Logic-level compatible and very fast switching. Suitable for relay driver and high-speed line driver. • AEC-Q101 Qualified ...

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P Channel 50V 180mA 4.5ohm
BUK9875-100A/CUX
BUK9875-100A/CUX - Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

SC15953

Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 100V • Continuous Drain Current Id : 7A • Drain Source On State Resistance : 0.062ohm

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N Channel 100V 7A 0.062ohm
STP55NF06
STP55NF06 - Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

SC15840

Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

STMICROELECTRONICS

The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...

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N Channel 60V 50A 0.015ohm
BC846B
BC846B - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16038

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC846B is a NPN general purpose Transistor in surface mounted device (SMD) plastic package. Designed for use in switching and amplification applications. Ideal for AF input stages and driver applications. • High current gain • Excellent hfe linearity •...

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NDS331N
NDS331N - SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A

SC16701

SMD N Channel, Logic Level Enhancement Mode Power MOSFET Transistor, SuperSOT, 20V, 1.3A

ONSEMI

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PC...

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N Channel 20V 1.3A 0.11ohm
BSS138BKW,115
BSS138BKW,115 - Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount

SC16779

Power MOSFET, N Channel, 60 V, 320 mA, 1 ohm, SOT-323, Surface Mount

NEXPERIA

The BSS138BKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit application...

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N Channel 60V 320mA 1ohm
MJD32CG
MJD32CG - Bipolar (BJT) Single Transistor, PNP, 100V, 3A, 15W, TO-252 (DPAK)

SC16114

Bipolar (BJT) Single Transistor, PNP, 100V, 3A, 15W, TO-252 (DPAK)

ONSEMI

The MJD32CG is a 3A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications. • Electrically similar to popular TIP31 and TIP32 series • AEC-Q101 qualified and PPAP capable

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FJP13009H2TU
FJP13009H2TU - Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220

SC15758

Bipolar (BJT) Single Transistor, NPN, 400V, 12A, 100W, TO-220

ONSEMI

The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipati...

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